Search results for "conductor"
showing 10 items of 1270 documents
Surface band-gap narrowing in quantized electron accumulation layers.
2010
An energy gap between the valence and the conduction band is the defining property of a semiconductor, and the gap size plays a crucial role in the design of semiconductor devices. We show that the presence of a two-dimensional electron gas near to the surface of a semiconductor can significantly alter the size of its band gap through many-body effects caused by its high electron density, resulting in a surface band gap that is much smaller than that in the bulk. Apart from reconciling a number of disparate previous experimental findings, the results suggest an entirely new route to spatially inhomogeneous band-gap engineering.
Evidence of Band Bending Induced by Hole Trapping at MAPbI3 Perovskite / Metal Interface
2016
International audience; Electron injection by tunneling from a gold electrode and hole transport properties in polycrystalline MAPbI3 has been investigated using variable temperature experiments and numerical simulations. The presence of a large and unexpected band bending at the Au/MAPbI3 interface is revealed and attributed to the trapping of holes, which enhances the injection of electrons via tunneling. These results elucidate the role of volume and interface defects in state-of-the-art hybrid perovskite semiconductors.
Thermoelectric properties of Sr_3GaSb_3 – a chain-forming Zintl compound
2012
Inspired by the promising thermoelectric properties in the Zintl compounds Ca_3AlSb_3 and Ca_5Al_2Sb_6, we investigate here the closely related compound Sr_3GaSb_3. Although the crystal structure of Sr_3GaSb_3 contains infinite chains of corner-linked tetrahedra, in common with Ca_3AlSb_3 and Ca_5Al_2Sb_6, it has twice as many atoms per unit cell (N = 56). This contributes to the exceptionally low lattice thermal conductivity (κ_L = 0.45 W m^(−1) K^(−1) at 1000 K) observed in Sr_3GaSb_3 samples synthesized for this study by ball milling followed by hot pressing. High temperature transport measurements reveal that Sr_3GaSb_3 is a nondegenerate semiconductor (consistent with Zintl charge-coun…
Electronic cooling and hot electron effects in heavily doped silicon-on-insulator film
2004
The influence of carrier concentration in silicon-on-insulator film on the thermal characteristics of semiconductor and performance of the superconductor-semiconductor-superconductor micro-coolers have been investigated at sub kelvin temperatures. The overheating of the lattice in heavily doped silicon film must be taken into account in the analysis of electron-phonon coupling experiment and operation of the cooler device. The heat flow between electrons and phonons in heavily doped silicon films is found to be proportional to T6, which is in accordance with theoretical prediction for dirty limit. Increasing the doping level in the semiconductor considerably increases both the efficiency of…
Properties of Thin Ferroelectric Film with Different Electrodes
2008
The influence of different metallic and semiconducting electrodes on the properties of thin ferroelectric films is considered within the framework of the phenomenological Ginzburg-Landau theory. Allowing for the effect of charge screening in metals and semiconductors, the contribution of electric field produced by charges in the electrodes is included into the functional of free energy and, hence, to the Euler-Lagrange equation for film polarization. Application of variational method to this equation solution permitted the transformation of the free energy functional into a conventional type free energy with a renormalized coefficient before P 2 , the coefficient being dependent on the both…
Ultrastrong Coupling of Plasmons and Excitons in a Nanoshell
2014
The strong coupling regime of hybrid plasmonic-molecular systems is a subject of great interest for its potential to control and engineer light-matter interactions at the nanoscale. Recently, the so-called ultrastrong coupling regime, which is achieved when the light-matter coupling rate reaches a considerable fraction of the emitter transition frequency, has been realized in semiconductor and superconducting systems and in organic molecules embedded in planar microcavities or coupled to surface plasmons. Here we explore the possibility to achieve this regime of light-matter interaction at nanoscale dimensions. We demonstrate by accurate scattering calculations that this regime can be reach…
AMORPHOUS SEMICONDUCTOR-ELECTROLYTE JUNCTION. A NEW INTERPRETATION OF THE IMPEDANCE DATA OF AMORPHOUS SEMICONDUCTING FILMS ON METALS.
1986
On the basis of the theory of amorphous semiconductor Schottky barrier an equivalent electrical circuit of the amorphous oxide film/electrolyte interface is proposed.—The analytical expressions for the equivalent conductance and capacitance of the barrier are reported in the hypothesis of a constant density of states within the mobility gap.—According to this model, the semiconducting properties and the impedance behaviour at different frequencies of anodic oxide films on Niobium are interpreted by taking into account the amorphous nature of the films.—An explanation for the anomalous behaviour of the Mott-Schottky plots usually observed with amorphous anodic oxide films is presented.—The p…
Macroscopic description of the two-dimensionalLaAlO3/SrTiO3interface
2016
We propose a simple analytical model to explain the possible appearance of the metallic conductivity in the two-dimensional (2D) ${\mathrm{LaAlO}}_{3}/{\mathrm{SrTiO}}_{3}$ interface. Our model considers the interface within a macroscopic approach, which is usual for semiconductor heterojunctions and is based on drift-diffusion equations. The solution of these equations allows us to obtain the positions of band edges as a function of distances from the interface. We show that for the 2D metallic conductivity to appear at the interface, the constituting substances should have the same type (either electronic or hole) of conductivity; in the opposite case the possible transition to metallic p…
Influence of thickness and interface on the low-temperature enhancement of the spin Seebeck effect in YIG films
2016
The temperature-dependent longitudinal spin Seebeck effect (LSSE) in heavy metal (HM)/Y_{3}Fe_{5}O_{12} (YIG) hybrid structures is investigated as a function of YIG film thickness, magnetic field strength, and different HM detection materials. The LSSE signal shows a large enhancement with reductions in temperature, leading to a pronounced peak at low temperatures. We find that the LSSE peak temperature strongly depends on the film thickness as well as on the magnetic field. Our result can be well explained in the framework of magnon-driven LSSE by taking into account the temperature-dependent effective propagation length of thermally excited magnons in the bulk of the material. We further …
Dynamic response of thin-film semiconductors to AC voltage perturbations
2012
A theoretical treatment of a Schottky barrier dynamic response is developed on the basis of a general model of a semiconductor with thickness comparable in length to the space charge region width. It is shown that, when the space charge region approaches the metal/semiconductor interface, the electric field at this interface, induced by the charge accumulated on the metal, becomes significant with respect to the electric field induced by the charge accumulated on the semiconductor. Under this condition, the total capacitance of the Schottky barrier becomes independent of the polarization potential and tends to the value ε/L, like in a pure dielectric insulator. The term thin film is intende…