Search results for "defect"
showing 10 items of 879 documents
Homogeneous and inhomogeneous contributions to the luminescence linewidth of point defects in amorphous solids: Quantitative assessment based on time…
2008
The article describes an experimental method that allows to estimate the inhomogeneous and homogeneous linewidths of the photoluminescence band of a point defect in an amorphous solid. We performed low temperature time-resolved luminescence measurements on two defects chosen as model systems for our analysis: extrinsic Oxygen Deficient Centers (ODC(II)) in amorphous silica and F+ 3 centers in crystalline Lithium Fluoride. Measurements evidence that only defects embedded in the amorphous matrix feature a dependence of the radiative decay lifetime on the emission energy and a time dependence of the first moment of the emission band. A theoretical model is developed to link these properties to…
Inhomogeneous width of oxygen-deficient centers induced by electron irradiation of silica
2009
We report a study of the luminescence activity of oxygen-deficient centers stabilized in as-grown synthetic silica, as compared with the same defects induced by $\ensuremath{\beta}$ irradiation at increasing doses, ranging from $1.2\ifmmode\times\else\texttimes\fi{}{10}^{3}$ to $5\ifmmode\times\else\texttimes\fi{}{10}^{6}\text{ }\text{kGy}$. We experimentally observe a progressive broadening of the luminescence band with increasing total electron dose released on samples. By analyzing our data within a theoretical model capable of separating homogeneous and inhomogeneous contribution to the total luminescence linewidth, we observe that the increasing of the width is entirely ascribable to t…
Optical properties of phosphorous-related point defects in silica fiber preforms
2009
Physical review / B 80, 205208 (2009). doi:10.1103/PhysRevB.80.205208
Twofold coordinated Ge defects induced by gamma-ray irradiation in Ge-doped SiO2
2008
We report an experimental study by photoluminescence, optical absorption and Electron Paramagnetic Resonance measurements on the effects of exposure of Ge-doped amorphous SiO2 to gamma ray radiation at room temperature. We have evidenced that irradiation at doses of the order of 1 MGy is able to generate Ge-related defects, recognizable from their optical properties as twofold coordinated Ge centers. Until now, such centers, responsible for photosensitivity of Ge-doped SiO2, have been induced only in synthesis procedures of materials. The found result evidences a role played by gamma radiation in generating photosensitive defects and could furnish a novel basis for photosensitive pattern wr…
Luminescence and absorption spectroscopy of Sn-related impurity centers in silica
2006
We report an experimental study on the absorption and luminescence spectra of oxygen deficient point defects in Sn-doped silica. The absorption band at 4.9 eV (B2β band) and the two related photoluminescence bands at ∼4.2 eV (singlet-singlet emission, S1 → S0) and at ∼3.2 eV (triplet-singlet emission, T1 → S0), linked by a thermally activated T1 → S1 inter-system crossing process (ISC), are studied as a function of temperature from 300 to 20 K. This approach allows us to investigate the dynamics properties of the matrix in the surroundings of the point defects and the effects of local disorder on the two relaxation processes from S1: the radiative channel to S0 and the ISC process to T1. We…
Luminescence activity of surface and interior Ge-oxygen deficient centers in silica
2005
We report a comparative study on the optical activity of surface and interior Ge–oxygen deficient centers in pressed porous and sol–gel Ge-doped silica, respectively. The experimental approach is based on the temperature dependence of the two photoluminescence bands at 4.2 (singlet–singlet emission, S1! S0) and 3.1 eV (triplet–singlet emission, T1! S0), excited within the absorption band at about 5 eV. Our data show that the phonon assisted intersystem crossing process, linking the two excited electronic states, more effective for surface than for interior centers in the temperature range 5–300 K. For both centers, a distribution of the activation energies of the process is found. Based on th…
Photoluminescence transient study of surface defects in ZnO nanorods grown by chemical bath deposition
2015
Two deep level defects (2.25 and 2.03 eV) associated with oxygen vacancies (Vo) were identified in ZnO nanorods (NRs) grown by low cost chemical bath deposition. A transient behaviour in the photoluminescence (PL) intensity of the two Vo states was found to be sensitive to the ambient environment and to NR post-growth treatment. The largest transient was found in samples dried on a hot plate with a PL intensity decay time, in air only, of 23 and 80 s for the 2.25 and 2.03 eV peaks, respectively. Resistance measurements under UV exposure exhibited a transient behaviour in full agreement with the PL transient, indicating a clear role of atmospheric O-2 on the surface defect states. A model fo…
Generation of oxygen deficient point defects in silica by γ and β irradiation
2007
We report an experimental study of the effects of y and β irradiation on the generation of a point defect known as ODC(II) in various types of commercial silica (a-SiO 2 ). The ODC(II) has been detected by means of photoluminescence (PL) spectroscopy measuring the PL band centered at 4.4 eV and excited at 5.0 eV associated to this defect. Our experiments show that ODC(II) are induced in all the investigated materials after irradiation at doses higher than 5 x 10 2 kGy. A good agreement is observed between the efficiencies of generation of ODC(II) under y and β irradiation, enabling a comprehensive study up to the dose of 5 x 10 6 kGy. Two different growth rates, one in the low and one in th…
Luminescence of biexcitons in silver halide crystals
1998
Abstract As it is known from Urbach rule, free excitons defining the fundamental absorption edge in AgBr 1 − x Cl x (0 ⩽ x ⩽ 1). The process of primary Frenkel defect creation which involves free exciton states even in AgCl and biexciton creation in AgCl are discussed. The fast luminescence band at ≈3.0 eV observed in AgCl under high-density pulsed electron beam and laser excitation has been studied. It is shown that its intensity is a non-linear function of the excitation density. We suggest that the fast luminescence comes from biexcitons; binding energies of such biexcitons in AgBr 1 − x Cl x (0 ⩽ x ⩽ 1) are estimated.
Quantum simulations in materials science: molecular monolayers and crystals
1999
Low temperature properties and anomalies in crystals and molecular monolayers are studied by path integral Monte Carlo (PIMC) simulations. For light particles (H 2 , D 2 ) adsorbed on graphite anomalies in the transition to the low temperature √3-phases have been observed in experiments and are analyzed by PIMC. The computed thermal expansion of various crystalline materials (Si, N 2 ) is in much better agreement with experiments compared to the results obtained with purely classical simulations.