Search results for "device"
showing 10 items of 1286 documents
Nanowires for NEMS Switches
2020
Nanoelectromechanical systems (NEMS) are a promising novel technology for operation in extreme conditions (e.g. high temperature and radiation levels), where complementary semiconductor technology devices might fail due to electronic instability. An example for a NEMS device is a nanowire-based switch, which employs mechanical deflection of a nanowire to open and close an electrical circuit. To date, assembly and operation of individual nanowire based NEMS switches have been successfully demonstrated at laboratory level, but their further technological development remains a challenge. This chapter gives an insight into the current advances in applications of nanowires for NEMS switches. Syn…
Electrochemically Controlled Ion Dynamics in Porphyrin Nanostructures
2020
peer-reviewed The full text of this article will not be available in ULIR until the embargo expires on the 22/07/2021 The dynamics of ion intercalation into solid matrices influences the performance of key components in most energy storage devices (Li-ion batteries, supercapacitors, fuel cells, etc.). Electrochemical methods provide key information on the thermodynamics and kinetics of these ion-transfer processes but are restricted to matrices supported on electronically conductive substrates. In this article, the electrified liquid|liquid interface is introduced as an ideal platform to probe the thermodynamics and kinetics of reversible ion intercalation with nonelectronically active matr…
Nanostructured Electrochemical Devices for Sensing, Energy Conversion and Storage
2016
Nanomaterials are very promising to enhance device performances for sensing, sustainable energy production, and energy conversion and storage, as extensively reported in the literature [1-3]. In this field, one of the most severe challenge is to find suitable methods for fabricating nanomaterials. Over the years, numerous preparation methods were proposed in the literature, but not all of them are easily scalable and economically advantageous for industrial application. In this context, electrochemical deposition in template is a facile method for fabricating either two- or one-dimensional nanostructured materials because it allows to easily adjust the fundamental parameters controlling the…
A prototypal architecture of a IEEE 21451 network for smart grid applications based on power line communications
2015
This paper deals with the development of reliable measurement and communication devices and systems and their integration on a prototypal network architecture for smart grid applications, based on the use of narrowband power line communications (PLCs). The proposed solution is presented and discussed in the framework of the ISO/IEC/IEEE 21451 family of Standards. Currently, PLCs are not properly addressed by the aforesaid Standards; on the other hand, by including such issue, their guidelines could represent a common platform for the integration and interoperability of the proposed systems and devices. This would allow to exploit the benefits of the IEEE 21451 approach also for PLC-based sm…
Assessment of mental stress through the analysis of physiological signals acquired from wearable devices
2019
Mental stress is a physiological state that directly correlates to the quality of life of individuals. Generally speaking, but especially true for disabled or elderly subjects, the assessment of such condition represents a very strong indicator correlated to the difficulties, and, in some case, to the frustration that derives from the execution of a task that results troublesome to be accomplished. This article describes a novel procedure for the assessment of the mental stress level through the use of low invasive wireless wearable devices. The information contained in electrocardiogram, respiratory signal, blood volume pulse, and electroencephalogram was extracted to set up an estimator f…
Real-Time Vector Automata
2013
We study the computational power of real-time finite automata that have been augmented with a vector of dimension k, and programmed to multiply this vector at each step by an appropriately selected k×k matrix. Only one entry of the vector can be tested for equality to 1 at any time. Classes of languages recognized by deterministic, nondeterministic, and "blind" versions of these machines are studied and compared with each other, and the associated classes for multicounter automata, automata with multiplication, and generalized finite automata.
Polarization attraction using counter-propagating waves in optical fiber at telecommunication wavelengths
2008
International audience; In this work, we report the experimental observation of a polarization attraction process which can occur in optical fibers at telecommunication wavelengths. More precisely, we have numerically and experimentally shown that a polarization attractor, based on the injection of two counter-propagating waves around 1.55 mu m into a 2-m long high nonlinear fiber, can transform any input polarization state into a unique well-defined output polarization state.
Quasi-sinusoidal oscillations in negative resistance devices with piece-wise analytical characteristics
1976
The second-order approximated solution of a negative resistance oscillator whose active device has a piece-wise analytical characteristic is presented. The frequency and the harmonic content of the oscillation waveform are obtained as functions of the circuit parameters and of the device bias.
Heavy Ion Induced Degradation in SiC Schottky Diodes : Bias and Energy Deposition Dependence
2017
Experimental results on ion-induced leakage current increase in 4H-SiC Schottky power diodes are presented. Monte Carlo and TCAD simulations show that degradation is due to the synergy between applied bias and ion energy deposition. This degradation is possibly related to thermal spot annealing at the metal semiconductor interface. This thermal annealing leads to an inhomogeneity of the Schottky barrier that could be responsible for the increase leakage current as a function of fluence. peerReviewed
Microbeam SEE Analysis of MIM Capacitors for GaN Amplifiers
2018
Broad-beam and microbeam single-event effect tests were performed on metal–insulator–metal capacitors with three different thicknesses of silicon nitride (Si3N4) dielectric insulator: 250, 500, and 750 nm. The broad-beam tests indicated that the devices with the thicker, 500- and 750-nm dielectric did not have a greater breakdown voltage. The surrounding structures of the capacitor were suspected to be a possible cause. Microbeam techniques made it possible to localize the failure location for the 500- and 750-nm devices. The failure occurs in the air bridge structure connected to the top capacitor plate, which can therefore be considered as an edge effect, while for the 250-nm devices, the…