Search results for "doping"
showing 10 items of 801 documents
Stability, sub-gap current, 1/f-noise, and elemental depth profiling of annealed Al:Mn-AlOX-Al normal metal-insulator-superconducting tunnel junctions
2016
In this paper we report a study of the effect of vacuum annealing at 400◦C on the properties of normal metal-insulator-superconductor (NIS) tunnel junctions, with manganese doped aluminium (Al:Mn) as the normal metal, aluminum as the superconductor and amorphous aluminum oxide as the tunneling barrier (Al:Mn-AlOx-Al). The annealing treatment improves the stability of the junctions, increases their tunneling resistance and does not have a negative impact on the low-temperature current-voltage characteristics. The measured 1 / f resistance noise of the junctions also changes after annealing, in the best case decreasing by over an order of magnitude. All these observations show that annealing …
Atomic Layer Deposition and Characterization of Erbium Oxide-Doped Zirconium Oxide Thin Films
2010
ZrO 2 films doped with Er 2 O 3 were grown by atomic layer deposition from tris(2,2,6,6-tetramethyl-3,5-heptanedionato)erbium, bis(methylcyclopentadienyl)methoxymethylzirconium, and ozone as precursors at 350°C. The erbium content was 1―5 cation %. The films were uniform in thickness. The ZrO 2 :Er 2 O 3 films were crystallized already in the as-deposited state. Upon annealing at 650°C, they were stabilized in the form of cubic or tetragonal polymorph of ZrO 2 . Enhancement in capacitance required intense crystallization that was observed when the film thickness exceeded 4.4 nm. The permittivity of the ZrO 2 :Er 2 O 3 films could reach 31. The capacitors based on the doped ZrO 2 possessed l…
Multisite formation in gadolinium doped SrF2 nanoparticles
2018
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Graded Carrier Concentration Absorber Profile for High Efficiency CIGS Solar Cells
2015
We demonstrate an innovative CIGS-based solar cells model with a graded doping concentration absorber profile, capable of achieving high efficiency values. In detail, we start with an in-depth discussion concerning the parametrical study of conventional CIGS solar cells structures. We have used the wxAMPS software in order to numerically simulate cell electrical behaviour. By means of simulations, we have studied the variation of relevant physical and chemical parameters-characteristic of such devices-with changing energy gap and doping density of the absorber layer. Our results show that, in uniform CIGS cell, the efficiency, the open circuit voltage, and short circuit current heavily depe…
Temperature Sensor Based on Ge-Doped Microstructured Fibers
2009
The fundamental mode cutoff properties of Ge-doped microstructured fibers, filled with a liquid, permit the implementation of wavelength- and amplitude-encoded temperature sensors with an ultra-high sensitivity. The cutoff wavelength changes with temperature, and the thermo-optic coefficient of the liquid determines the sensitivity of the sensor. Sensitivity as high as 25 nm/∘Cis reported. In addition, simple amplitude interrogation techniques can be implemented using the same sensor heads.
Silica-based powders and monoliths with bimodal pore systemsElectronic supplementary information (ESI) available: UV–Vis spectrum of sample 3. See ht…
2002
Porous pure and doped silicas with pore sizes at two length scales (meso/macroporous) have been prepared and shaped both as powders and monoliths through a one-pot surfactant assisted procedure by using a simple template agent and starting from atrane complexes as inorganic precursors.
Ordering of fluorite-type phases in erbium-doped oxyfluoride glass ceramics
2018
In this study, novel transparent Er3+ doped glass ceramics were prepared from melt-quenched oxyfluoride glasses with general composition of Na2O-NaF-BaF2-YbF3-Al2O3-SiO2. The crystallization of fluorite (BaF2, BaF2-YbF3, NaF-BaF2-YbF3 and Na0.5-xYb0.5+xF2+2x) and distorted fluorite (rhombohedral Ba4Yb3F17 and tetragonal NaF-BaF2-YbF3) phases was analysed in glass ceramics with different BaF2 and YbF3 ratio. The phase composition and microstructure were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Intense red upconversion luminescence (UCL) was detected under near-infrared excitation resulting from three photon upconversion followed by cross-relaxation betw…
PEMBUATAN SISTEM VAKUM OTOMATIS GAS H2S BERBAHAN TiO2-Ni/Al2O3 TERKONEKSI ARDUINO UNO PADA LABORATORIUM KIMIA
2021
Research has been carried out on the H2S gas sensor made of TiO2-Ni/Al2O3 which is connected to an automatic vacuum. The results showed that the optimum conditions for the variation of Ni doping metal levels were 20 mg / gram TiO2. The semiconductor material synthesis method used the sol gel method with TTiP precursor which was made at pH 7. Coating of the sol gel solution on the Al2O3 substrate used a dip coater with a decrease speed of 1 cm / minute and was carried out 7 times of immersion. The characterization of synthetic results used UVVis, XRD, FTIR and SEM-EDX. The band gap value resulting from Ni doping is 2.75 eV from 3.2 eV, XRD identification shows that TiO2 is anataseic and dete…
Semiconducting properties of passive films and corrosion layers on weathering steel
2020
Abstract Anodic films were grown on Weathering Steel by potentiostatic polarization in slightly alkaline solution. The photoelectrochemical results reveal that they are n-type iron oxide with Eg = 2.0 eV. Rust layer grown by atmospheric corrosion are n-type semiconductors with a band gap higher than that estimated for the anodic film attributed to the formation of γ-lepidocrocite. The electrochemical impedance spectra allow to evidence that rust layers have a higher conductivity with respect to anodic films due to the presence of highly doped iron oxide layers. The use of Mott-Schottky theory to model the dependence of oxide capacitance as function of potential is critically discussed.
Time-resolved luminescence and excitation spectroscopy of co-doped Gd3Ga3Al2O12 scintillating crystals
2020
The work of Viktorija Pankratova was supported by the Latvian Science Council grant LZP-2018/2-0358. Vladimir Pankratov gratefully acknowledges the financial support from the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST «MISiS» (Grant No. К3-2018-021). The research leading to this result has also been supported by the project CALIPSO plus under the Grant Agreement 730872 from the EU Framework Programme for Research and Innovation HORIZON 2020. Institute of Solid State Physics, University of Latvia as the Center of Excellence has received funding from the European Union’s Horizon 2020 Framework Programme H2020-WIDESP…