Search results for "doping"
showing 10 items of 801 documents
Optically detected magnetic resonance investigation of a luminescent oxygen–vacancy complex in Mn-doped LiBaF3
2006
The structure of an oxygen-related luminescence centre in manganese-doped LiBaF 3 was investigated by means of photoluminescence (PL) and PL-detected electron paramagnetic resonance. At 20 K an oxygen-related complex shows two luminescence bands peaking at about 430 and 475 nm, when excited at 220 nm. These bands can be attributed to an excited triplet state (S = 1) of an oxygen-vacancy complex with the z axis of the fine structure tensor parallel to the (110) direction. This complex is believed to be next to a Mn 2+ impurity on a Ba 2+ site and can be described as an oxygen on a fluorine lattice site with a nearest fluorine vacancy along the (110) direction.
Role of diffusing molecular hydrogen on relaxation processes in Ge-doped glass
2007
Temperature dependencies of steady-state and time-resolved photoluminescence (PL) from triplet state at 3.1 eV and singlet state at 4.2 eV ascribed to the twofold-coordinated Ge have been measured in unloaded and H2-loaded Ge-doped silica samples under 5.0 eV excitation in the 10–310 K range. Experimental evidences indicate that diffusing molecular hydrogen (H2) depopulates by a collisional mechanism the triplet state, decreasing both its lifetime of about 14% and the associated triplet PL intensity, whereas those of the singlet are insensitive to the presence of H2.
Cd12Ag32(SePh)36: Non-Noble Metal Doped Silver Nanoclusters
2019
While there are numerous recent reports on doping of a ligand-protected noble metal nanocluster (e.g., Au and Ag) with another noble metal, non-noble metal (e.g., Cd) doping remains challenging. Here, we design a phosphine-assisted synthetic strategy and synthesize a Cd doped Ag nanocluster, Cd12Ag32(SePh)36 (SePh: selenophenolate), which exhibits characteristic UV–vis absorption features and rare near-infrared (NIR) photoluminescence at ∼1020 nm. The X-ray single crystal structure reveals an asymmetric two-shell Ag4@Ag24 metal kernel protected by four nonplanar Cd3Ag(SePh)9 metal–ligand frameworks. Furthermore, the electronic structure analysis shows that the cluster is a 20-electron “supe…
Structural inhomogeneity of Ge-doped amorphous SiO2 probed by photoluminescence lifetime measurements under synchrotron radiation.
2007
We report a study of the photoluminescence (PL) time decay of the B-type center, characterized by an optical absorption band peaked at similar to 5.2 eV and two related PL bands peaked at similar to 3.2 eV and similar to 4.3 eV, in sol-gel Ge-doped a- SiO2 under excitation by synchrotron radiation. Measurements were carried out by excitation in UV and in vacuum-UV (VUV), and were performed in the temperature range from 8 K up to 300 K in order to isolate the effects of the intersystem-crossing process, proposed to link the two emission bands of the center. Repeating the time decay measurement at several emission energies falling inside the 4.3 eV band, we have observed a variation of the PL…
Photosensitivity of silica glass with germanium studied by photoinduced of thermally stimulated luminescence with vacuum ultraviolet radiation
2003
Photosensitivity of the germanium-doped silica was studied through kinetics of recombination of the created defects in isothermal and thermally stimulated luminescence (TSL) regimes. The main observed luminescence contains bands mainly due to Ge oxygen deficient center. The maximum of photosensitivity corresponds to the high-energy part of the 7.6 eV band. The growth of TSL intensity is almost linear for the case of excitation through monochromatic light and growth with saturation in the case of excitation with white light. The efficiency of formation of TSL peaks increases with an increase of the temperature. The result was explained as multi-step process of photochemical dissociation and …
Mechanism for energy transfer processes between Ce3+ and Tb3+ in LaPO4:Ce,Tb nanocrystals by time-resolved luminescence spectroscopy
2010
The energy transfer mechanisms between Ce 3+ and Tb 3+ in LaPO 4 :Ce,Tb nanocrystals have been studied by means of time-resolved luminescence spectroscopy in a wide temperature range (10-300K). Special attention was paid to detailed comparative analysis of both rise and decay emission components of both Ce 3+ and Tb 3+ . Surprisingly, a relatively slow rise (several microseconds) of Tb 3+ emission under 266-nm laser excitation was detected, which corresponds to the 4f-5d transition of Ce 3+ in LaPO 4 . It was shown that this rise of Tb 3+ emission could not have arisen due to relaxation of Ce 3+ ions, whose excited state has a lifetime of about 20ns. It was demonstrated that the generally a…
Temperature dependence of luminescence decay in Sn-doped silica
2005
We report an experimental study on the temperature dependence, in the range 18-300 K, of the decay kinetics of the emission at 4.1 eV from the first excited electronic state of oxygen deficient centers in a 2000 ppm Sn-doped sol-gel silica. At low temperature, this luminescence decays exponentially with a lifetime of 8.4 ns, whereas, on increasing the temperature, the time decay decreases and cannot be fitted with an exponential function. These results are expected if there is a competition between the radiative and the thermally activated intersystem-crossing decay channels toward the associated triplet state. The comparison with previous data in pure oxygen-deficient and Ge-doped silica g…
Photoluminescence in silicon-doped n-indium selenide
1994
Photoluminescence results on silicon-doped indium selenide are reported. The effect of temperature and excitation intensity is studied. At low temperature, free and neutral donor bound exciton peaks are observed. Above 100 K only free exciton and band-to-band photoluminescence is detected. In order to give account of the full lineshape as a function of the absorption coefficient, the Urbach absorption tail of InSe is measured. Transmission and reflection photoluminescence spectra are also compared in order to study the effect of carrier diffusion. The shape of the photoluminescence spectrum can be accounted for through a direct gap model.
Temperature and impurity concentration effects on upconversion luminescence in LaInO3 doped with Er3+
2016
In this paper a novel method for synthesis of LaInO3:Er3+ is reported and upconversion luminescence properties of the synthesized material at different temperatures (9–300 K) are studied. The samples were prepared by co-precipitation and subsequent heat treatment of lanthanum, indium and erbium hydroxides. It is shown that the excitation at 980 nm leads to a strong green upconversion luminescence in the material. At the concentrations above 0.1 mol. % of Er3+ the energy transfer upconversion mechanism of the luminescence becomes evident. Further increase of Er3+ content in the material leads to higher red-to-green upconversion luminescence intensity ratio. The mechanisms responsible for the…
Recombination processes in unintentionally doped GaTe single crystals
2002
Emission spectra of GaTe single crystals in the range of 1.90–1.38 eV have been analyzed at different temperatures and excitation intensities by photoluminescence, photoluminescence excitation, and selective photoluminescence. A decrease in band gap energy with an increase in temperature was obtained from the redshift of the free exciton recombination peak. The energy of longitudinal optical phonons was found to be 14±1 meV. A value of 1.796±0.001 eV for the band gap at 10 K was determined, and the bound exciton energy was found to be 18±0.3 meV. The activation energy of the thermal quenching of the main recombination peaks and of the ones relating to the ionization energy of impurities and…