Search results for "elastic recoil detection"
showing 8 items of 38 documents
Determination of molecular stopping cross section of 12C, 16O, 28Si, 35Cl, 58Ni, 79Br, and 127I in silicon nitride
2015
Abstract Silicon nitride is a technologically important material in a range of applications due to a combination of important properties. Ion beam analysis techniques, and in particular, heavy ion elastic recoil detection analysis can be used to determine the stoichiometry of silicon nitride films, which often deviates from the ideal Si3N4, as well as the content of impurities such as hydrogen, even in the presence of other materials or in a matrix containing heavier elements. Accurate quantification of IBA results depends on the basic data used in the data analysis. Quantitative depth profiling relies on the knowledge of the stopping power cross sections of the materials studied for the io…
Depth profiling of Al2O3 + TiO2 nanolaminates by means of a time-of-flight energy spectrometer
2011
Atomic layer deposition (ALD) is currently a widespread method to grow conformal thin films with a sub-nm thickness control. By using ALD for nanolaminate oxides, it is possible to fine tune the electrical, optical and mechanical properties of thin films. In this study the elemental depth profiles and surface roughnesses were determined for Al2O3 + TiO2 nanolaminates with nominal single-layer thicknesses of 1, 2, 5, 10 and 20 nm and total thickness between 40 nm and 60 nm. The depth profiles were measured by means of a time-of-flight elastic recoil detection analysis (ToF-ERDA) spectrometer recently installed at the University of Jyväskylä. In TOF-E measurements 63Cu, 35Cl, 12C and 4He ions…
Time-of-flight - Energy spectrometer for elemental depth profiling - Jyväskylä design
2014
Abstract A new time-of-flight elastic recoil detection spectrometer has been built, and initially the main effort was focused in getting good timing resolution and high detection efficiency for light elements. With the ready system, a 154 ps timing resolution was recorded for scattered 4.8 MeV 4 He 2+ ions. The hydrogen detection efficiency was from 80% to 20% for energies from 100 keV to 1 MeV, respectively, and this was achieved by having an additional atomic layer deposited Al 2 O 3 coating on the first timing detector’s carbon foil. The data acquisition system utilizes an FPGA-card to time-stamp every time-of-flight and energy event with 25 ns resolution. The different origins of the ba…
Improvement of time-of-flight spectrometer for elastic recoil detection analysis
2013
Instrumentation for time-of-flight elastic recoil detection analysis
2016
Time-of-flight elastic recoil detection is an ion beam based method to analyze the elemental composition of thin film samples at different depths. In order to improve the mass resolution and to enable kinematic correction a position sensitive gas ionization chamber energy detector was constructed. This detector along with pre-existing timing detectors were connected to a modern fully digitizing data acquisition setup. This thesis describes the design of these instruments, including all aspects from the mechanical design of the gas ionization detector to the algorithm and software development of the digitizing acquisition setup. The performance of the system has been studied with measurements …
Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
2018
A comparative study of mechanical properties and elemental and structural composition was made for aluminum nitride thin films deposited with reactive magnetron sputtering and plasma enhanced atomic layer deposition (PEALD). The sputtered films were deposited on Si (100), Mo (110), and Al (111) oriented substrates to study the effect of substrate texture on film properties. For the PEALD trimethylaluminum–ammonia films, the effects of process parameters, such as temperature, bias voltage, and plasma gas (ammonia versus N2/H2), on the AlN properties were studied. All the AlN films had a nominal thickness of 100 nm. Time-of-flight elastic recoil detection analysis showed the sputtered films t…
Oxidation-Induced Changes in the ALD-Al2O3/InAs(100) Interface and Control of the Changes for Device Processing
2018
InAs crystals are emerging materials for various devices like radio frequency transistors and infrared sensors. Control of oxidation-induced changes is essential for decreasing amounts of the harmful InAs surface (or interface) defects because it is hard to avoid the energetically favored oxidation of InAs surface parts in device processing. We have characterized atomic-layer-deposition (ALD) grown Al2O3/InAs interfaces, preoxidized differently, with synchrotron hard X-ray photoelectron spectroscopy (HAXPES), low-energy electron diffraction, scanning tunneling microscopy, and time-of-flight elastic recoil detection analysis. The chemical environment and core-level shifts are clarified for w…
Potku – New analysis software for heavy ion elastic recoil detection analysis
2014
Time-of-flight elastic recoil detection (ToF-ERD) analysis software has been developed. The software combines a Python-language graphical front-end with a C code computing back-end in a user-friendly way. The software uses a list of coincident time-of- flight–energy (ToF–E) events as an input. The ToF calibration can be determined with a simple graphical procedure. The graphical interface allows the user to select different elements and isotopes from a ToF–E histogram and to convert the selections to individual elemental energy and depth profiles. The resulting sample composition can be presented as relative or absolute concentrations by integrating the depth profiles over user-defined rang…