Search results for "electrical"
showing 10 items of 11048 documents
3D magnetic and thermal fields for in the transformer with homogenised amorphous C-core under high frequency
2017
Space Charges and Partial Discharges Simultaneous Measurements under DC Stress
2016
In the field of HVDC, the main causes of insulation aging are due to the space charge and PD phenomena. In particular, the purpose of the present work is to verify a possibility to measure simultaneously the space charge and the PDs under DC stress in order to evaluate the correlation between both phenomena. The space charge was measured by using a modified PEA cell and PDs were measured by using a novel wireless sensor system. The space charge profile and the PD pulses carried out simultaneously have been reported and discussed.
Partial discharge of gel insulated high voltage power modules subjected to unconventional voltage waveforms
2016
Performances and duration of the new generation of high voltage power electronic components are dependent on dielectric materials aim to insulating their internal terminals. The presence of defects, some due to faults generated during the manufacturing process, but also due to the internal design of layers and connections, can cause local enhancements of electric field and consequently possible activity of partial discharges phenomena or other effects (aging, tracking) that may result in reduction of device reliability. Furthermore, the usage of unconventional voltage waveforms, like square waves or pulse width modulated waves, additionally increases the electrical aging of the insulation s…
Partial discharge detection and localization along medium voltage cables
2017
In the last years different partial discharge (PD) measuring techniques have been developed because PD diagnostic is the most widely tool to evaluate the insulation condition of a power cable. Recently non-conventional methods and sensors have been used in order to reach improved results in PD measurements. The purpose of this work is to perform measurements that allow to study the variation of pulses when they travel along a MV cable and to locate the pulse source through the time arrival difference of the pulses obtained from two sensors installed separately.
2018
Damping distances of surface plasmon polariton modes sustained by different thin titanium nitride (TiN) films are measured at the telecom wavelength of 1.55 μm. The damping distances are correlated to the electrical direct current resistivity of the films sustaining the surface plasmon modes. It is found that TiN/Air surface plasmon mode damping distances drop non-linearly from 40 to 16μm as the resistivity of the layers increases from 28 to 130μΩ.cm, respectively. The relevance of the direct current (dc) electrical resistivity for the characterization of TiN plasmonic properties is investigated in the framework of the Drude model, on the basis of parameters extracted from spectroscopic ell…
High-Performance Flexible Magnetic Tunnel Junctions for Smart Miniaturized Instruments
2018
Current Spreading Length and Injection Efficiency in ZnO/GaN-Based Light-Emitting Diodes
2019
We report on carrier injection features in light-emitting diodes (LEDs) based on nonintentionally doped-ZnO/p-GaN heterostructures. These LEDs consist of a ZnO layer grown by chemical-bath deposition (CBD) onto a p-GaN template without using any seed layer. The ZnO layer (~1- $\mu \text{m}$ thickness) consists of a dense collection of partially coalesced ZnO nanorods, organized in wurtzite phase with marked vertical orientation, whose density depends on the concentration of the solution during the CBD process. Due to the limited conductivity of the p-GaN layer, the recombination in the n-region is strongly dependent on the spreading length of the holes, ${L}_{h}$ , coming from the p-contact…
Multi-pulse characterization of trapping/detrapping mechanisms in AlGaN/GaN high electromobility transistors
2019
GaN high-electro mobility transistors (HEMTs) are among the most promising candidates for use in high-power, high-frequency, and high-temperature electronics owing to their high electrical breakdown threshold and their high saturation electron velocity. The applications of these AlGaN/GaN HEMTs in power converters are limited by the surface trapping effects of drain-current collapse. Charge-trapping mechanisms affect the dynamic performance of all GaN HEMTs used in power switching applications. This study analyzes the dynamic resistance of GaN HEMTs and finds that the effects of dynamic resistance can be suppressed by controlling switching conditions and on-off cycles.
Deformation of bubbles in silicon gel insulation under an alternating electric field
2019
The behavior of silicone gel under electrical stress plays a significant role in the reliability and durability of high voltage electronic power devices due to its widespread use for the insulation of IGBT modules and other components. The charges accumulation at the bubble boundaries leads to significant displacements due to the establishment of Coulombic forces and the high deformability of colloidal system. The main purpose of this work is to validate a numerical approach useful to investigate, for a given silicone gel, the non-linear relation between the applied HVDC stress and the electric field over an air bubble within the insulation bulk. The analysis has been carried out by means o…
Power efficiency improvements with the radio frequency H− ion source
2016
CW 13.56 MHz radio frequency-driven H(-) ion source is under development at the University of Jyväskylä for replacing an existing filament-driven ion source at the MCC30/15 cyclotron. Previously, production of 1 mA H(-) beam, which is the target intensity of the ion source, has been reported at 3 kW of RF power. The original ion source front plate with an adjustable electromagnet based filter field has been replaced with a new front plate with permanent magnet filter field. The new structure is more open and enables a higher flux of ro-vibrationally excited molecules towards the plasma electrode and provides a better control of the potential near the extraction due to a stronger separation …