Search results for "electron microscopy"
showing 10 items of 706 documents
Study of silica-based intrinsically emitting nanoparticles produced by an excimer laser
2019
International audience; We report an experimental study demonstrating the feasibility to produce both pure and Ge-doped silica nanoparticles (size ranging from tens up to hundreds of nanometers) using nanosecond pulsed KrF laser ablation of bulk glass. In particular, pure silica nanoparticles were produced using a laser pulse energy of 400 mJ on pure silica, whereas Ge-doped nanoparticles were obtained using 33 and 165 mJ per pulse on germanosilicate glass. The difference in the required energy is attributed to the Ge doping, which modifies the optical properties of the silica by facilitating energy absorption processes such as multiphoton absorption or by introducing absorbing point defect…
Photochemical synthesis of pyrene perfluoroalkyl derivatives and their embedding in a polymethylmethacrylate matrix: a spectroscopic and structural s…
2014
A photochemical, alternative and eco-compatible approach to perfluoroalkyl derivatives of pyrene is presented. The perfluoroalkyl chain is regiospecifically introduced at the 1 position of pyrene. The synthesized products have been embedded in a polymethylmethacrylate matrix by photocuring at 365 nm. Both the photochemical reactions can be considered a “green tool” for the synthetic chemist in order to obtain materials with prospective optoelectronic applications. The so-obtained composites have been the object of a study by UV and fluorescence spectroscopy in order to explore their luminescence properties. The small angle X-ray scattering and the transmission electron microscopy techniques…
Mechanical cleaning of graphene using in situ electron microscopy
2020
Avoiding and removing surface contamination is a crucial task when handling specimens in any scientific experiment. This is especially true for two-dimensional materials such as graphene, which are extraordinarily affected by contamination due to their large surface area. While many efforts have been made to reduce and remove contamination from such surfaces, the issue is far from resolved. Here we report on an in situ mechanical cleaning method that enables the site-specific removal of contamination from both sides of two dimensional membranes down to atomic-scale cleanliness. Further, mechanisms of re-contamination are discussed, finding surface-diffusion to be the major factor for contam…
Structural defects in Hg1−xCdxI2 layers grown on CdTe substrates by vapor phase epitaxy
1997
Hg1−xCdxI2 20–25-μm-thick layers with a uniform composition in the range of x = 0.1–0.2 were grown on CdTe substrates by vapor phase epitaxy (VPE). The growth was carried out using an α-HgI2 polycrystalline source at 200 °C and in the time range of 30–100 h. The layers were studied by scanning electron microscopy (SEM) and high resolution synchrotron x-ray topography (SXRT). The SEM and SXRT images of Hg1−xCdxI2 VPE layers allow one to identify the defects affecting the layer structure. The two main types of structural defects in the layers are subgrain boundaries and densely spaced striations similar to those referred generally to as vapor grown HgI2 bulk crystals. The effect of the growth…
Chemical characterization of gallium droplets grown by LP-MOCVD.
2006
International audience; This study is concerned with the chemical characterization of metallic gallium droplets, obtained on silicon (1 0 0) substrates with a single growth step, by the LP-MOCVD technique with TMGa like precursor. These structures are characterized by SIMS, XPS and TEM. The analyses results lead to a structure proposition for the droplets. The core is composed of metastable metallic gallium with a non-negligible carbon quantity probably coming from incomplete precursor decomposition. The outer part, composed of gallium oxide maintains the structure stability. Covering of the substrate by a thin gallium layer of gallium compounds is observed.
Deposition of Pt and Sn doped CeOx layers on silicon substrate
2013
Abstract Radio Frequency Magnetron Sputtering is used to elaborate CeO x layers doped with platinum and/or tin on a SiO 2 /Si substrate. Morphology, chemical composition and crystallographic structures were investigated by Transmission Electron Microscopy. The presence of nanoparticles of mainly ceria and metallic platinum is exhibited.
Electrical and structural characterization of metal-oxide-semiconductor capacitors with silicon rich oxide
2001
Metal-oxide-semiconductor capacitors in which the gate oxide has been replaced with a silicon rich oxide (SRO) film sandwiched between two thin SiO2 layers are presented and investigated by transmission electron microscopy and electrical measurements. The grain size distribution and the amount of crystallized silicon remaining in SRO after annealing have been studied by transmission electron microscopy, whereas the charge trapping and the charge transport through the dots in the SRO layer have been extensively investigated by electrical measurements. Furthermore, a model, which explains the electrical behavior of such SRO capacitors, is presented and discussed. © 2001 American Institute of …
Memory effects in MOS capacitors with silicon rich oxide insulators
2000
ABSTRACTTo form crystalline Si dots embedded in SiO2, we have deposited thin films of silicon rich oxide (SRO) by plasma-enhanced chemical vapor deposition of SiH4 and O2. Then the materials wereannealed in N2 ambient at temperatures between 950 and 1100 °C. Under such processing, the supersaturation of Si in the amorphous SRO film produces the formation of crystalline Si dots embedded in SiO2. The narrow dot size distributions, analyzed by transmission electron microscopy, are characterized by average grain radii and standard deviations down to about 1 nm. The memory function of such structures has been investigated in metal-oxidesemiconductor (MOS) capacitors with a SRO film sandwiched be…
Interfacial reaction during MOCVD growth revealed by in situ ARXPS.
2006
International audience; Angle-resolved X-ray photoelectron spectroscopy (ARXPS) experiments were performed to study in situ the reaction at the film–substrate interface during metal organic chemical vapor deposition (MOCVD) growth of TiO2 thin films deposited on the silicon substrate. The in-depth distribution of chemical species was determined using several ARXPS thickness calculation models considering either single or bilayer systems. By the comparison of two single-layermodels, the presence of a second layer composed of silicon oxidewas evidenced. High-resolution transmission electron microscopy (HRTEM) observations confirmed the stratification of the film in two layers, as well as the …
Microscopic observations of superficial ultrastructure of unworn siloxane-hydrogel contact lenses by cryo-scanning electron microscopy
2006
The purpose of this study was to analyze three commercial siloxane-hydrogel contact lens materials, lotrafilcon A, balafilcon A, and galyfilcon A, by cryogenic scanning electron microscopy (cryoSEM). The fully hydrated lenses were frozen in slush liquid nitrogen and qualitatively observed in a cryogenic scanning electron microscope. The superficial ultrastructure of the siloxane-hydrogels was observed at the areas where the lens fractured during sample cryogenic preparation. There are qualitative differences among the three examined materials in the complex polymer network structure existing between the outer layer and the underlying polymer. CryoSEM, although destructive, is a useful tool …