Search results for "electron"
showing 10 items of 24810 documents
A Novel Fault-Tolerant Routing Algorithm for Mesh-of-Tree Based Network-on-Chips
2019
Use of bus architecture based communication with increasing processing elements in System-on-Chip (SoC) leads to severe degradation of performance and speed of the system. This bottleneck is overcome with the introduction of Network-on-Chips (NoCs). NoCs assist in communication between cores on a single chip using router based packet switching technique. Due to miniaturization, NoCs like every Integrated circuit is prone to different kinds of faults which can be transient, intermittent or permanent. A fault in any one component of such a crucial network can degrade performance leaving other components non-usable. This paper presents a novel Fault-Tolerant routing Algorithm for Mesh-of-Tree …
Interface evolution during magnetic pulse welding under extremely high strain rate collision: mechanisms, thermomechanical kinetics and consequences
2020
Abstract Magnetic pulse welding enables to produce perplexing interfacial morphologies due to the complex material response during the high strain rate collision. Thus, a thermomechanical model is used in this study to investigate the formation mechanism of the wake, vortex, swirling and mesoscale cavities with the increase of the impact intensity at the interface. The formation of these interfacial features are difficult to characterize by insitu methods, thus the origin of phenomena still remain a subject of open discussion. Our studies identify the governing mechanisms and the associated thermomechanical kinetics, which are responsible for the formation mechanism of interfacial features.…
Silicon dosimeters based on Floating Gate Sensor: design, implementation and characterization
2020
A rad-hard monolithic dosimeter has been implemented and characterized in a standard 180 nm CMOS technology. The radiation sensor (C-sensor) is based on a Floating Gate (FG) MOS discharge principle. The output current is processed by a current-to-voltage (I/V) interface and then converted by a 5-bit flash ADC. The dosimeter is re-usable (FG can be recharged) and can detect a dose up to 1krad (Si) with a resolution of 30rad (Si) typical over temperature 0 to 85°C range. The ADC allows easy further signal processing for calibration and averaging, etc. The power consumption of C-sensor plus I/V interface is < 2mW from a 5 V power supply. The overall layout area is less than 0.25mm2. The Rad…
Data-driven Fault Diagnosis of Induction Motors Using a Stacked Autoencoder Network
2019
Current signatures from an induction motor are normally used to detect anomalies in the condition of the motor based on signal processing techniques. However, false alarms might occur if using signal processing analysis alone since missing frequencies associated with faults in spectral analyses does not guarantee that a motor is fully healthy. To enhance fault diagnosis performance, this paper proposes a machinelearning based method using in-built motor currents to detect common faults in induction motors, namely inter-turn stator winding-, bearing- and broken rotor bar faults. This approach utilizes single-phase current data, being pre-processed using Welch’s method for spectral density es…
Development of hard x-ray photoelectron SPLEED-based spectrometer applicable for probing of buried magnetic layer valence states
2016
Abstract A novel design of high-voltage compatible polarimeter for spin-resolved hard X-ray photoelectron spectroscopy (Spin-HAXPES) went into operation at beamline BL09XU of SPring-8 in Hyogo, Japan. The detector is based on the well-established principle of electron diffraction from a W(001) single-crystal at a scattering energy of 103.5 eV. It's special feature is that it can be operated at a high negative bias potential up to 10 kV, necessary to access the HAXPES range. The polarimeter is operated behind a large hemispherical analyzer (Scienta R-4000). It was optimized for high transmission of the transfer optics. A delay-line detector (20 mm dia.) is positioned at the exit plane of the…
Refractive index controlled by film morphology and free carrier density in undoped ZnO through sol-pH variation
2018
Abstract Zinc oxide thin films, prepared by the sol-gel process, were deposited on glass substrate using spin coating technique. The sol-pH effect on the optical parameters was studied for alkaline sol. The surface roughness was investigated by atomic force microscopy (AFM) and varied from 20 to 40 nm. The optical transmission measurements were carried out to evaluate the behavior of the extinction coefficient and the refractive index. An exponential decay of the refractive index ‘n’ as a function of wavelength was observed. The refractive index increases slightly when the pH increases to pH = 9.5 where it reaches its maximum. Beyond this value, it decreases sharply. This behavior has been …
Determination of elastoplastic properties of TiO2 thin films deposited on dual phase stainless steel using nanoindentation tests
2010
International audience; In recent years, the extraction of mechanical behaviour of thin films by nanoindentation using sharp indenter geometry has been extensively studied. This work investigates the mechanical properties of TiO2 thin film (1 µm thickness) deposited by spin coating on dual phase Duplex stainless steel and glass substrates. Experiments are carried out with different sharp triangular pyramids (a Cube corner and a Berkovich indenter) using a commercial Nano Indenter® XP apparatus. The substrate effect has been counteracted and an inverse method proposed in literature for bulk material has been adapted to assess the elastoplastic parameters of the tested thin film directly from…
Enhancement of the Spin Pumping Effect by Magnon Confluence Process in YIG/Pt Bilayers
2019
The experimental investigation of the spin pumping process by dipolar‐exchange magnons parametrically excited in in‐plane magnetized yttrium iron garnet/platinum bilayers is presented. The electric voltage generated in the platinum layer via the inverse spin Hall effect (ISHE) results from contributions of two opposite spin currents formed by the longitudinal spin Seebeck effect and by the spin pumping from parametric magnons. In the field‐dependent measurements of the spin pumping‐induced component of the ISHE‐voltage, a clearly visible sharp peak is detected at high pumping powers. It is found that the peak position is determined by the process of confluence of two parametrically excited …
Two prospective Li-based half-Heusler alloys for spintronic applications based on structural stability and spin–orbit effect
2017
To search for half-metallic materials for spintronic applications, instead of using an expensive trial-and-error experimental scheme, it is more efficient to use first-principles calculations to design materials first, and then grow them. In particular, using a priori information of the structural stability and the effect of the spin–orbit interaction (SOI) enables experimentalists to focus on favorable properties that make growing half-metals easier. We suggest that using acoustic phonon spectra is the best way to address the stability of promising half-metallic materials. Additionally, by carrying out accurate first-principles calculations, we propose two criteria for neglecting the SOI s…
Low complexity digital background calibration algorithm for the correction of timing mismatch in time-interleaved ADCs
2019
Abstract A low-complexity post-processing algorithm to estimate and compensate for timing skew error in a four-channel time-interleaved analog to digital converter (TIADC) is presented in this paper, together with its hardware implementation. The Lagrange interpolator is used as the reconstruction filter which alleviates online interpolator redesign by using a simplified representation of coefficients. Simulation results show that the proposed algorithm can suppress error tones for input signal frequency from 0 to 0.4 f s . The proposed structure has, at least, 41% reduction in the number of required multipliers. Implementation of the algorithm, for a four-channel 10-bit TIADC, show that, f…