Search results for "electronics"

Model of holographic recording in amorphous chalcogenide films using subband-gap lightat room temperature

1997

The subband-gap light holographic recording in amorphous as-evaporated ${\mathrm{As}}_{2}$${\mathrm{S}}_{3}$ films at room temperature is experimentally studied. Properties are considerably different from those of usual holographic recording based on the band-gap light induced structural changes. The most important characteristic features of this nonpermanent recording include photoinduced refractive index increase, weak photobleaching, the absence of the photoinduced thickness changes, light polarization dependence, large exposures, holographic grating shifts during the exposure and a peculiar two maxima spatial frequency response. The first order diffraction efficiency up to 4.1% is achie…

Deuterium monolayers physisorbed on krypton-plated graphite: A two-dimensional Ising system

1997

Abstract Neutron-diffraction measurements were used for the first time to investigate the influence of the modification of the graphite substrate potential and of the susbrate symmetry caused by a preadsorbed layer of krypton (Kr). It will be shown that D2 on Kr/graphite presents a new 2D Ising system. The order-disorder transition of this system has been studied.

Magnetoelectric properties of epitaxialFe3O4thin films on (011) PMN-PT piezosubstrates

2015

We determine the magnetic and magnetotransport properties of 33 nm thick ${\mathrm{Fe}}_{3}{\mathrm{O}}_{4}$ films epitaxially deposited by rf-magnetron sputtering on unpoled (011) ${[{\mathrm{PbMg}}_{1/3}{\mathrm{Nb}}_{2/3}{\mathrm{O}}_{3}]}_{0.68}\ensuremath{-}{[{\mathrm{PbTiO}}_{3}]}_{0.32}$ (PMN-PT) substrates. The magnetoresistance (MR), as well as the magnetization reversal, strongly depend on the in-plane crystallographic direction of the epitaxial (011) ${\mathrm{Fe}}_{3}{\mathrm{O}}_{4}$ film and strain. When the magnetic field is applied along [100], the magnetization loops are slanted and the sign of the longitudinal MR changes from positive to negative around the Verwey transiti…

Radiation-Induced Defect and Charge Accumulation and Thermostimulated Relaxation Processes in Al<sub>2</sub>O<sub>3</sub> Cry…

1997

Observation of quantized subband states and evidence for surface electron accumulation in CdO from angle-resolved photoemission spectroscopy

2008

The electronic structure of well-ordered single-crystal thin films of CdO100 has been studied using angleresolved photoemission spectroscopy. Quantized electron subbands are observed above the valence-band maximum. The existence of these states provides evidence of an intrinsic electron accumulation space-charge layer near the CdO surface, an interpretation supported by coupled Poisson-Schrodinger calculations. The origin of the accumulation layer result is discussed in terms of the bulk band structure of CdO calculated using quasiparticle-corrected density-functional theory, which reveals that the conduction-band minimum at the Brillouin-zone center lies below the charge neutrality level.

Evidence of Band Bending Induced by Hole Trapping at MAPbI3 Perovskite / Metal Interface

2016

International audience; Electron injection by tunneling from a gold electrode and hole transport properties in polycrystalline MAPbI3 has been investigated using variable temperature experiments and numerical simulations. The presence of a large and unexpected band bending at the Au/MAPbI3 interface is revealed and attributed to the trapping of holes, which enhances the injection of electrons via tunneling. These results elucidate the role of volume and interface defects in state-of-the-art hybrid perovskite semiconductors.

Structural characterization and anomalous Hall effect of Rh2MnGe thin films

2015

Abstract We present the preparation, structural investigations, and transport properties of L21-ordered epitaxial Rh2MnGe Heusler thin films grown by pulsed laser deposition. The films grow (1 0 0) oriented on (1 0 0)MgO substrate with [ 0 1 1 ] Rh 2 MnGe ∥ [ 0 1 0 ] MgO . The rocking curve widths of (4 0 0) reflections are below 1° and decrease with increasing deposition temperature. The flat surface of the thin films allowed lithographic patterning enabling quantitative magnetotransport measurements. We measured resistivity and the Hall effect. We suggest skew scattering as the dominant effect in the temperature dependent anomalous Hall effect, consistent with the theoretically expected s…

Ab initio thermodynamics for the growth of ultra-thin Cu film on a perfect MgO(001) surface

2005

Controlled growth of thin metallic films on oxide substrates is important for numerous micro-and nanoelectronic applications. Our ab initio study is devoted to the periodic slab simulations for a series of ordered 2D Cu superlattices on the regular MgO(001) substrate. Submonolayer and monolayer substrate Cu coverages were calculated using the DFT-GGA method, as implemented into the CRYSTAL-98 code. The results of ab initio calculations have been combined with thermodynamic theory which allows us to predict the growth mode of ultra-thin metal films (spinodal decomposition vs. nucleation-and-growth regime) as a function of the metal coverage and the temperature, and to estimate the metal dens…

Electrical switching of perpendicular magnetization in a single ferromagnetic layer

2020

We report on the efficient spin-orbit torque (SOT) switching in a single ferromagnetic layer induced by a new type of inversion asymmetry, the composition gradient. The SOT of 6- to 60-nm epitaxial FePt thin films with a $L{1}_{0}$ phase is investigated. The magnetization of the FePt single layer can be reversibly switched by applying electrical current with a moderate current density. Different from previously reported SOTs which either decreases with or does not change with the film thickness, the SOT in FePt increases with the film thickness. We found the SOT in FePt can be attributed to the composition gradient along the film normal direction. A linear correlation between the SOT and th…

Thermal conductivity of thermoelectric Al-substituted ZnO thin films

2013

ZnO:Al thin films with a low electrical resistivity were grown by magnetron sputtering on sapphire substrates. The cross-plane thermal conductivity (κ = 4.5 ± 1.3 W/mK) at room temperature is almost one order of magnitude lower than for bulk materials. The thermoelectric figure of merit ZT at elevated temperatures was estimated from in-plane power factor and the cross-plane thermal conductivity at room temperature. It is expected that the thermal conductivity drops with increasing temperature and is lower in-plane than cross-plane. Consequently, the thin film ZT is at least three times higher than for bulk samples at intermediate temperatures. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinh…