Search results for "electronics"
showing 10 items of 4340 documents
Influence of the tip effect of a carbon nanostructure on low current electrical arc initiation
2009
During their setting off, circuit breakers and vacuum switch devices are accompanied by an electric arc whose physical and chemical properties are governed by emissive current sites at the cathode surface called cathode spots. Assuming the continuity of the current on the cathode surfaces, the cathode spots contribute to supply the electrical arc by electron emission and material ejection. Thus they cause erosion on the contact electrodes inducing a dysfunction of contactors. The apparition of these cathode spots is due essentially to dust particles and surface irregularities at different scales. This experimental work represents a contribution to the understanding of the electrical arc beh…
Review on Polymers for Thermoelectric Applications.
2014
In this review, we report the state-of-the-art of polymers in thermoelectricity. Classically, a number of inorganic compounds have been considered as the best thermoelectric materials. Since the prediction of the improvement of the figure of merit by means of electronic confinement in 1993, it has been improved by a factor of 3-4. In the mean time, organic materials, in particular intrinsically conducting polymers, had been considered as competitors of classical thermoelectrics, since their figure of merit has been improved several orders of magnitude in the last few years. We review here the evolution of the figure of merit or the power factor during the last years, and the best candidates…
Resonance assisted jump-in voltage reduction for electrostatically actuated nanobeam-based gateless NEM switches.
2019
Electrostatically actuated nanobeam-based electromechanical switches have shown promise for versatile novel applications, such as low power devices. However, their widespread use is restricted due to poor reliability resulting from high jump-in voltages. This article reports a new method for lowering the jump-in voltage by inducing mechanical oscillations in the active element during the switching ON process, reducing the jump-in voltage by more than three times. Ge0.91Sn0.09 alloy and Bi2Se3 nanowire-based nanoelectromechanical switches were constructed in situ to demonstrate the operation principles and advantages of the proposed method.
Mg and In Codoped p-type AlN Nanowires for pn Junction Realization.
2019
Efficient, mercury-free deep ultraviolet (DUV) light-emitting diodes (LEDs) are becoming a crucial challenge for many applications such as water purification. For decades, the poor p-type doping and difficult current injection of Al-rich AlGaN-based DUV LEDs have limited their efficiency and therefore their use. We present here the significant increase in AlN p-doping thanks to Mg/In codoping, which leads to an order of magnitude higher Mg solubility limit in AlN nanowires (NWs). Optimal electrical activation of acceptor impurities has been further achieved by electron irradiation, resulting in tunnel conduction through the AlN NW p-n junction. The proposed theoretical scenario to account f…
Nanowires: A route to efficient thermoelectric devices
2019
Miniaturization of electronic devices aims at manufacturing ever smaller products, from mesoscopic to nanoscopic sizes. This trend is challenging because the increased levels of dissipated power demands a better understanding of heat transport in small volumes. A significant amount of the consumed energy in electronics is transformed into heat and dissipated to the environment. Thermoelectric materials offer the possibility to harness dissipated energy and make devices less energy-demanding. Heat-to-electricity conversion requires materials with a strongly suppressed thermal conductivity but still high electronic conduction. Nanowires can meet nicely these two requirements because enhanced …
Imaging Symmetry-Selected Corner Plasmon Modes in Penta-Twinned Crystalline Ag Nanowires
2011
International audience; Using dual-plane leakage radiation microscopy, we investigate plasmon propagation in individual penta-twinned crystalline silver nanowires. By measuring the wavevector content of the light emitted in the substrate, we unambiguously determine the effective index and the losses of the mode propagating in these structures. The experimental results, in particular, the unexpectedly low effective index, reveal the direct influence of the nanowire crystallinity and pentagonal structure on the observed plasmon modes. By analogy with molecular orbitals of similar symmetry, the plasmon modes are also determined numerically in good agreement with the observed values. We further…
The effect of substrate roughness on the static friction of CuO nanowires
2012
Abstract The dependence of static friction on surface roughness was measured for copper oxide nanowires on silicon wafers coated with amorphous silicon. The surface roughness of the substrate was varied to different extent by the chemical etching of the substrates. For friction measurements, the nanowires (NWs) were pushed by an atomic-force microscope (AFM) tip at one end of the NW until complete displacement of the NW was achieved. The elastic bending profile of a NW during this manipulation process was used to calculate the ultimate static friction force. A strong dependence of static friction on surface roughness was demonstrated. The real contact area and interfacial shear strength wer…
The structural properties of GaN/AlN core-shell nanocolumn heterostructures.
2010
International audience; The growth and structural properties of GaN/AlN core-shell nanowire heterostructures have been studied using a combination of resonant x-ray diffraction, Raman spectroscopy and high resolution transmission electron microscopy experiments. For a GaN core of 20 nm diameter on average surrounded by a homogeneous AlN shell, the built-in strain in GaN is found to agree with theoretical calculations performed using a valence force field model. It is then concluded that for an AlN thickness up to at least 12 nm both core and shell are in elastic equilibrium. However, in the case of an inhomogeneous growth of the AlN shell caused by the presence of steps on the sides of the …
Tunable invisibility cloaking by using isolated graphene-coated nanowires and dimers
2017
AbstractWe investigate, both theoretically and numerically, a graphene-coated nano-cylinder illuminated by a plane electromagnetic wave in the far-infrared range of frequencies. We have derived an analytical formula that enables fast evaluation of the spectral window with a substantial reduction in scattering efficiency for a sufficiently thin cylinder. This polarization-dependent effect leads to tunable resonant invisibility that can be achieved via modification of graphene chemical potential monitored by the gate voltage. A multi-frequency cloaking mechanism based on dimer coated nanowires is also discussed in detail.
Infrared pulsed laser deposition of niobium nitride thin films
2011
We have successfully fabricated superconducting niobium nitride thin films on single crystals of magnesium oxide using a pulsed laser deposition technique where 1064 nm (photon energy ~1.16 eV) laser pulses from an Nd:YAG laser were used for ablation. A correlation between the superconducting transition temperature, the nitrogen base pressure during deposition and the lattice parameter of the produced NbN films was observed. Superconductor-insulator-normal metal junctions fabricated using these NbN films as the superconductor revealed nonlinear electrical characteristics at 4.2 K associated with quasiparticle tunneling.