Search results for "electronics"
showing 10 items of 4340 documents
Potential of amorphous Mo–Si–N films for nanoelectronic applications
2003
The properties of amorphous metallic molybdenum–silicon–nitrogen (Mo–Si–N) films were characterised for use in nanoelectronic applications. The films were deposited by co-sputtering of molybdenum and silicon targets in a gas mixture of argon and nitrogen. The atomic composition, microstructure and surface roughness were studied by RBS, TEM and AFM analyses, respectively. The electrical properties were investigated in the temperature range 80 mK to 300 K. No transition into a superconductive state was observed. Nanoscale wires were fabricated using electron beam lithography with their properties measured as a function of temperature.
Initial stages of TiO2 thin films MOCVD growth studied by in situ surface analyses
2005
Abstract In situ chemical surface analyses using X-ray photoelectron spectroscopy (XPS) were performed to understand the initial stages of TiO 2 thin-film MOCVD growth. Deposits on Si (1 0 0), a few nanometres thick, were obtained at a fixed temperature of 650 °C and for two different pressures, 2.9 and 0.05 mbar, using titanium tetraisopropoxide (TTIP) as precursor. Pressure lowering led to a higher deposit growth rate. Reduction of titanium with respect to stoichiometric titanium dioxide and oxidation of the wet-cleaned silicon substrate are observed from decomposition of the Ti 2p and Si 2p peaks. The formation of a TiSi x O y mixed oxide is also pointed out and confirmed by the presence…
Numerical modelling of the industrial silicon single crystal growth processes
2007
Silicon wafers produced from the silicon single crystals are the basic material for the manufacturing of various kinds of electronic devices determining the everyday life of the modern society. Silicon single crystals industrially are mainly grown by two methods - by the Czochralski and by the floating zone technique. Both of them involve various physical processes with complex interactions which makes the experimental optimization of the growth techniques a rather hard and expensive task. Therefore, mathematical modelling supported by the rapid increase of the computer power has become an effective means in the development of the industrial crystal growth. (© 2007 WILEY-VCH Verlag GmbH & C…
Aging, rejuvenation, and memory phenomena in a lead-based relaxor ferroelectric
2002
Isothermal aging and temperature cycle experiments were done on the relaxor ferroelectric lead magnesium niobate mixed with 10% lead titanate (PMN-10PT) around and below the diffuse maximum of the dielectric loss. With increasing aging time tw the isothermal evolution of the linear susceptibility follows a power law and does not show frequency scaling. The non-linear susceptibility, however, obeys nearly perfect ωt w-scaling. After aging the sample at a single temperature we observed both rejuvenation and memory effects in temperature cycle experiments. This observation indicates symmetric behavior in the sense that it shows up irrespective of whether cooling with subsequent re-heating or h…
Metalenses with high-NA, enhanced resolution and apodization
2017
Dielectric microlenses employed in imaging and focusing for optoelectronics are currently prospects to be substituted by metalenses showing an extraordinary optical performance within notably reduced volumes. Here we present some proposals to achieve an enhanced resolution in metallodielectric metasurface-based lenses established on either efficient arrangements with high numerical aperture or spatial filtering enabling to surpass the limit of resolution derived by the Rayleigh criterion.
Modelling and analysis of the influence of solar spectrum on the efficiency of photovoltaic modules
2021
Abstract The article presents the influence of changes in the solar radiation spectrum distribution on the properties of various photovoltaic modules, with particular emphasis on the scattered component. We compared the relative efficiency of the photovoltaic modules based on various semiconductor absorbers during bright and sunny, and cloudy summer days. Additionally, we presented the impact of the module tilt angle on the magnitude of the surface incident scattered component and on the efficiency of the module. The solar spectra for various weather conditions were estimated using specialised computer programmes,such as SolarSpectrum or SMARTS2, and we present here the validation results f…
High Resolution X-Ray Spectroscopy with Compound Semiconductor Detectors and Digital Pulse Processing Systems
2012
The advent of semiconductor detectors has revolutionized the broad field of X-ray spectroscopy. Semiconductor detectors, originally developed for particle physics, are now widely used for X-ray spectroscopy in a large variety of fields, as X-ray fluorescence analysis, X-ray astronomy and diagnostic medicine. The success of semiconductor detectors is due to several unique properties that are not available with other types of detectors: the excellent energy resolution, the high detection efficiency and the possibility of development of compact detection systems. Among the semiconductors, silicon (Si) detectors are the key detectors in the soft X-ray band (15 keV) and will continue to be the c…
Hard X-Ray Response of Pixellated CdZnTe Detectors
2009
In recent years, the development of cadmium zinc telluride (CdZnTe) detectors for x-ray and gamma ray spectrometry has grown rapidly. The good room temperature performance and the high spatial resolution of pixellated CdZnTe detectors make them very attractive in space-borne x-ray astronomy, mainly as focal plane detectors for the new generation of hard x-ray focusing telescopes. In this work, we investigated on the spectroscopic performance of two pixellated CdZnTe detectors coupled with a custom low noise and low power readout application specific integrated circuit (ASIC). The detectors (10x10x1 and 10x10x2 mm3 single crystals) have an anode layout based on an array of 256 pixels with a …
Transmission Efficiency of the SAGE Spectrometer Using GEANT4
2013
The new SAGE spectrometer allows simultaneous electron and γ-ray in-beam studies of heavy nuclei. A comprehensive GEANT4 simulation suite has been created for the SAGE spectrometer. This includes both the silicon detectors for electron detection and the germanium detectors for γ-ray detection. The simulation can be used for a wide variety of tests with the aim of better understanding the behaviour of SAGE. A number of aspects of electron transmission are presented here.
A review of the development of portable laser induced breakdown spectroscopy and its applications
2014
Abstract In this review, we present person-transportable laser induced breakdown spectroscopy (LIBS) devices that have previously been developed and reported in the literature as well as their applications. They are compared with X-ray fluorescent (XRF) devices, which represent their strongest competition. Although LIBS devices have advantages over XRF devices, such as sensitivity to the light elements, high spatial resolution and the possibility to distinguish between different layers of the sample, there are also disadvantages and both are discussed here. Furthermore, the essential portable LIBS instrumentation (laser, spectrograph and detector) is presented, and published results related…