Search results for "electronics"
showing 10 items of 4340 documents
Characterization of the conductance mechanisms of DNA origami by AC impedance spectroscopy.
2009
Design of Bistable Gold@Spin‐Crossover Core–Shell Nanoparticles Showing Large Electrical Responses for the Spin Switching
2019
<p>A simple protocol to prepare core-shell gold@spin-crossover (Au@SCO) nanoparticles (NPs) based on the 1D spin-crossover [Fe(Htrz)<sub>2</sub>(trz)](BF<sub>4</sub>) coordination polymer is reported. The synthesis relies on a two-step approach consisting on a partial surface ligand substitution of the citrate-stabilized Au NPs followed by the controlled growth of a very thin layer of the SCO polymer. As a result, colloidally stable core@shell spherical NPs of 19 nm in size exhibiting a narrow distribution in sizes have been obtained, revealing a switchable SCOshell of <i>ca.</i>4 nm. Temperature-dependent charge transport measurements of an electri…
Guest Effect on Nanopatterned Spin-Crossover Thin Films
2011
International audience; Nanopatterned thin films of the metal–organic framework {Fe(bpac)[Pt(CN)4]} (bpac=bis(4‐pyridyl)acetylene) are elaborated by the combination of a sequential assembly process and a lithographic method. Raman microspectroscopy is used to probe the temperature dependence of the spin state of the iron(II) ions in the films (40–90 nm in thickness), and reveals an incomplete but cooperative spin transition comparable to that of the bulk material. Adsorption/desorption of pyridine guest molecules is found to have a substantial influence on the spin‐crossover properties of the thin layers. This interplay between host–guest and spin‐crossover properties in thin films and nano…
Hybrid Interfaces in Molecular Spintronics
2018
Molecular/inorganic multilayer heterostructures are gaining attention in molecular electronics and more recently in new generation spintronic devices. The intrinsic properties of molecular materials as low cost, tuneability, or long spin lifetimes were the original reasons behind their implementation. However, the non-innocent role played by these hybrid interfaces is a determinant factor in the device performance. In this account we will give an overview about different types of hybrid molecular system/ferromagnet interfaces, which can be of direct application in molecular spintronics. This includes the insertion of a 2D material in between the molecular system and the ferromagnet. As pers…
Generation of broadband THz transients via metallic spintronic emitters driven by 20-fs pulses at 1030 nm
2020
We explore power and bandwidth scaling for the generation of highly-temporally-confined THz transients from spintronic emitters, driven by the 250-fs and 20-fs pulses of a high-power 28-MHz Yb-based laser, spectrally centered at 1030 nm.
Exploring room-temperature transport of single-molecule magnet-based molecular spintronics devices using the magnetic tunnel junction as a device pla…
2019
A device architecture utilizing a single-molecule magnet (SMM) as a device element between two ferromagnetic electrodes may open vast opportunities to create novel molecular spintronics devices. Here, we report a method of connecting an SMM to the ferromagnetic electrodes. We utilized a nickel (Ni)–AlOx–Ni magnetic tunnel junction (MTJ) with the exposed side edges as a test bed. In the present work, we utilized an SMM with a hexanuclear [Mn6(μ3-O)2(H2N-sao)6(6-atha)2(EtOH)6] [H2N-saoH = salicylamidoxime, 6-atha = 6-acetylthiohexanoate] complex that is attached to alkane tethers terminated with thiols. These Mn-based molecules were electrochemically bonded between the two Ni electrodes of an…
Design of Molecular Spintronics Devices Containing Molybdenum Oxide as Hole Injection Layer
2017
Effect of DC Electric Field on the Emitted THz Signal of Antenna-Coupled Spintronic Emitters
2019
We study the impact of an external electric DC field on antenna-coupled spintronic THz emitters driven by a 90 fs, 1550 nm laser oscillator. Simultaneous application of external electric and magnetic field shows a quadratic decrease in peak-peak THz pulse with increase in the bias voltage. We ascribe this decrease to Joule heating caused by the DC current flowing through the spintronic material.
Structural, electrical and optical characteristics of Al-doped zinc oxide thin films deposited by reactive magnetron sputtering
2013
ZnO:Al (AZO) thin films on glass were deposited by DC reactive magnetron sputtering at approximately 300°C substrate temperature. Structural, electrical and optical properties were investigated as a function of oxygen flow. XRD data shows that AZO thin films are polycrystalline with pronounced c-axis orientation and the grain size increasing with the oxygen flow. The lowest achieved resistivity within the deposited set of samples was 7.6·10 -4 Ωcm. The transmittance of AZO films was above 80 % at 550 nm with the optical band gap between 3.4 and 3.8 eV.
Influence on PD Parameters due to Voltage Conducted Disturbances
2004
In the standard specification of ac dielectric-characteristic measurements of insulating materials, test voltage is prescribed as "approximately sinusoidal" when the highest acceptable deviation of the HV waveform, from the correct sinusoidal shape, is limited to a /spl plusmn/5% tolerance range of the crest factor value. In the field of partial discharge (PD) measurements and their statistical data processing, on which forecasts of long term behavior of components and their reliability are currently carried out, the results of elaborations depend on the voltage wave shape. In this paper, the errors in PD measurements, evaluated at industrial frequencies, due to applied voltages distorted b…