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RESEARCH PRODUCT
Structural, electrical and optical characteristics of Al-doped zinc oxide thin films deposited by reactive magnetron sputtering
R. KalendarevK VilnisJuris PuransMartins ZubkinsA Azenssubject
Materials scienceSputteringBand gapElectrical resistivity and conductivityDopingAnalytical chemistryTransmittanceSubstrate (electronics)CrystalliteThin filmdescription
ZnO:Al (AZO) thin films on glass were deposited by DC reactive magnetron sputtering at approximately 300°C substrate temperature. Structural, electrical and optical properties were investigated as a function of oxygen flow. XRD data shows that AZO thin films are polycrystalline with pronounced c-axis orientation and the grain size increasing with the oxygen flow. The lowest achieved resistivity within the deposited set of samples was 7.6·10 -4 Ωcm. The transmittance of AZO films was above 80 % at 550 nm with the optical band gap between 3.4 and 3.8 eV.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2013-12-13 | IOP Conference Series: Materials Science and Engineering |