0000000000376259

AUTHOR

K Vilnis

showing 3 related works from this author

Structural, electrical and optical characteristics of Al-doped zinc oxide thin films deposited by reactive magnetron sputtering

2013

ZnO:Al (AZO) thin films on glass were deposited by DC reactive magnetron sputtering at approximately 300°C substrate temperature. Structural, electrical and optical properties were investigated as a function of oxygen flow. XRD data shows that AZO thin films are polycrystalline with pronounced c-axis orientation and the grain size increasing with the oxygen flow. The lowest achieved resistivity within the deposited set of samples was 7.6·10 -4 Ωcm. The transmittance of AZO films was above 80 % at 550 nm with the optical band gap between 3.4 and 3.8 eV.

Materials scienceSputteringBand gapElectrical resistivity and conductivityDopingAnalytical chemistryTransmittanceSubstrate (electronics)CrystalliteThin filmIOP Conference Series: Materials Science and Engineering
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Raman, electron microscopy and electrical transport studies of x-ray amorphous Zn-Ir-O thin films deposited by reactive DC magnetron sputtering

2015

Zn-Ir-O thin films on glass and Ti substrates were deposited by reactive DC magnetron sputtering at room temperature. Structural and electrical properties were investigated as a function of iridium concentration in the films. Raman spectrum of Zn-Ir-O (61.5 at.% Ir) resembles the spectrum of rutile IrO2, without any distinct features of wurtzite ZnO structure. SEM images indicated that morphology of the films surface improves with the iridium content. EDX spectroscopy and cross-section SEM images revealed that the films growing process is homogeneous. Crystallites with approximately 2-5 nm size were discovered in the TEM images. Thermally activated conductivity related to the variable range…

Materials scienceAnalytical chemistrychemistry.chemical_elementSputter depositionVariable-range hoppingAmorphous solidsymbols.namesakechemistrysymbolsIridiumCrystalliteThin filmRaman spectroscopyWurtzite crystal structureIOP Conference Series: Materials Science and Engineering
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Changes in structure and conduction type upon addition of Ir to ZnO thin films

2017

Zn-Ir-O (Zn/Ir ≈ 1/1) thin films have been reported to be a potential p-type TCO material. It is, however, unknown whether it is possible to achieve p-type conductivity at low Ir content, and how the type and the magnitude of conductivity are affected by the film structure. To investigate the changes in properties taking place at low and moderate Ir content, this study focuses on the structure, electrical and optical properties of ZnO:Ir films with iridium concentration varying between 0.0 and 16.4 at.%. ZnO:Ir thin films were deposited on glass, Si, and Ti substrates by DC reactive magnetron co-sputtering at room temperature. Low Ir content (up to 5.1 at.%) films contain both a nano-crysta…

Materials scienceThin filmsAnalytical chemistrychemistry.chemical_element02 engineering and technologyConductivity010402 general chemistryIridium01 natural sciencesIonCrystallinityElectrical resistivity and conductivityMaterials Chemistry:NATURAL SCIENCES:Physics [Research Subject Categories]IridiumThin filmAmorphous doped ZnOMetals and AlloysSurfaces and Interfaces021001 nanoscience & nanotechnology0104 chemical sciencesSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsAmorphous solidchemistryCrystallite0210 nano-technologyReactive DC magnetron co-sputtering
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