6533b82efe1ef96bd12926c8
RESEARCH PRODUCT
Raman, electron microscopy and electrical transport studies of x-ray amorphous Zn-Ir-O thin films deposited by reactive DC magnetron sputtering
A AzensJuris PuransJ. GabrusenoksMartins ZubkinsK VilnisK. KundzinsR. KalendarevKrisjanis Smitssubject
Materials scienceAnalytical chemistrychemistry.chemical_elementSputter depositionVariable-range hoppingAmorphous solidsymbols.namesakechemistrysymbolsIridiumCrystalliteThin filmRaman spectroscopyWurtzite crystal structuredescription
Zn-Ir-O thin films on glass and Ti substrates were deposited by reactive DC magnetron sputtering at room temperature. Structural and electrical properties were investigated as a function of iridium concentration in the films. Raman spectrum of Zn-Ir-O (61.5 at.% Ir) resembles the spectrum of rutile IrO2, without any distinct features of wurtzite ZnO structure. SEM images indicated that morphology of the films surface improves with the iridium content. EDX spectroscopy and cross-section SEM images revealed that the films growing process is homogeneous. Crystallites with approximately 2-5 nm size were discovered in the TEM images. Thermally activated conductivity related to the variable range hopping changes to the non-thermally activated before iridium concentration reaches the 45 at.%.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2015-03-09 | IOP Conference Series: Materials Science and Engineering |