0000000000376260
AUTHOR
A Azens
showing 5 related works from this author
Structural, electrical and optical characteristics of Al-doped zinc oxide thin films deposited by reactive magnetron sputtering
2013
ZnO:Al (AZO) thin films on glass were deposited by DC reactive magnetron sputtering at approximately 300°C substrate temperature. Structural, electrical and optical properties were investigated as a function of oxygen flow. XRD data shows that AZO thin films are polycrystalline with pronounced c-axis orientation and the grain size increasing with the oxygen flow. The lowest achieved resistivity within the deposited set of samples was 7.6·10 -4 Ωcm. The transmittance of AZO films was above 80 % at 550 nm with the optical band gap between 3.4 and 3.8 eV.
Amorphous p-Type Conducting Zn-x Ir Oxide (x > 0.13) Thin Films Deposited by Reactive Magnetron Cosputtering
2021
Zinc-iridium oxide (Zn-Ir-O) thin films have been demonstrated as a p-type conducting material. However, the stability of p-type conductivity with respect to chemical composition or temperature is still unclear. In this study we discuss the local atomic structure and the electrical properties of Zn-Ir-O films in the large Ir concentration range. The films are deposited by reactive DC magnetron co-sputtering at two different substrate temperatures-without intentional heating and at 300 {\deg}C. Extended X-ray absorption fine structure (EXAFS) analysis reveals that strongly disordered ZnO4 tetrahedra are the main Zn complexes in Zn-Ir-O films with up to 67.4 at% Ir. As the Ir concentration in…
Structural, electrical and optical properties of zinc‐iridium oxide thin films deposited by DC reactive magnetron sputtering
2014
ZnO-IrO2 thin films were deposited on glass by DC reactive magnetron sputtering at room tem-perature. Structural, electrical and optical properties were investigated as a function of iridium atomic concentra-tion in the films. XRD data shows that ZnO-IrO2 thin films are X-ray amorphous and Raman spectrum resembles the spectrum of IrO2, without any distinct features of wurtzite ZnO structure. The lowest film resistivity and the highest transmittance achieved in the present study were 1.4 × 10-3 Ωcm and 33% at 550 nm, respectively. However, resistivity and transmittance are inversely related to the iridium concentration in the films.
Raman, electron microscopy and electrical transport studies of x-ray amorphous Zn-Ir-O thin films deposited by reactive DC magnetron sputtering
2015
Zn-Ir-O thin films on glass and Ti substrates were deposited by reactive DC magnetron sputtering at room temperature. Structural and electrical properties were investigated as a function of iridium concentration in the films. Raman spectrum of Zn-Ir-O (61.5 at.% Ir) resembles the spectrum of rutile IrO2, without any distinct features of wurtzite ZnO structure. SEM images indicated that morphology of the films surface improves with the iridium content. EDX spectroscopy and cross-section SEM images revealed that the films growing process is homogeneous. Crystallites with approximately 2-5 nm size were discovered in the TEM images. Thermally activated conductivity related to the variable range…
Changes in structure and conduction type upon addition of Ir to ZnO thin films
2017
Zn-Ir-O (Zn/Ir ≈ 1/1) thin films have been reported to be a potential p-type TCO material. It is, however, unknown whether it is possible to achieve p-type conductivity at low Ir content, and how the type and the magnitude of conductivity are affected by the film structure. To investigate the changes in properties taking place at low and moderate Ir content, this study focuses on the structure, electrical and optical properties of ZnO:Ir films with iridium concentration varying between 0.0 and 16.4 at.%. ZnO:Ir thin films were deposited on glass, Si, and Ti substrates by DC reactive magnetron co-sputtering at room temperature. Low Ir content (up to 5.1 at.%) films contain both a nano-crysta…