Search results for "electronics"

Improving the Long‐Term Stability of Doped Spiro‐Type Hole‐Transporting Materials in Planar Perovskite Solar Cells

2021

The improvement of the long-term stability of perovskite-based solar cells (PSCs) toward commercialization is closely linked to the development of cutting-edge charge-transporting materials. The progress on the design and the synthesis of new hole-transporting materials (HTMs) is synergistically attaining both top efficiencies and promising stability. Herein, the synthesis and characterization of two doped-HTMs based on electron-rich spiranic cores, namely, 9H-quinolinophenoxazine (spiro-POZ) and 9H-quinolinophenothiazine (spiro-PTZ), are presented. The novel HTMs exhibit excellent solubility, optimal highest occupied molecular orbital energy, and excellent thermal stability with glass tran…

Effect of slow gain dynamics in mode-locked fiber lasers: Chirped soliton molecules

2012

We theoretically and experimentally demonstrate the pivotal role of the gain dynamics in the formation of chirped soliton molecules in mode-locked lasers. Such molecules are characterized by an increasing separation from leading to trailing pulses.

Solid-fluid interaction in a pillar-based phononic crystal

2016

In this paper, we investigate the wave dispersion of two dimensional pillar-based phononic crystal surrounded in liquid medium. An unit cell structure with reduced pillar height (hp/a)=0.5 and reduced radius (rp/a)=0.3 is simulated using Finite Element Method. The geometrical parameter is chosen to demonstrate a local resonance mechanism that allow the confinement of elastic energy at the interface between the solid and the fluid. In order to identify the energy distribution, we represent the eigenmode at high symmetry (point X) in the first Brillouin zone. The decreasing trend of frequency is also boosted with the increase of pillar height. From the total displacement, the energy is mostly…

A Comparative Performance Study of a 1200 V Si and SiC MOSFET Intrinsic Diode on an Induction Heating Inverter

2014

This paper presents a comparison of the behavior of the intrinsic diode of silicon (Si) and silicon carbide (SiC) MOSFETs. The study was done for 1200 V Si and SiC MOSFETs. The data sheet from manufacturers shows the characteristics of MOSFET' intrinsic diode when gate source voltage (VGS) is 0 V. There are applications where the MOSFET' intrinsic diode is used while VGS is different than 0 V. One of these applications is induction heating, where depending on the load and the regulation system, the diode can conduct a significant part of the inverter current. In most applications which use the MOSFET' intrinsic diode, the turn ON of the intrinsic diode happens at VGS = 0 V. After a blanking…

SEGR in SiO<inf>2</inf>-Si<inf>3</inf>N<inf>4</inf> stacks

2013

Nanocrystal memories for FLASH device applications

2004

Nanocrystals memory cells, in which the conventional polysilicon floating gate is replaced by an array of silicon nanocrystals, have been fabricated and characterized. Single cells and cell arrays of 1 Mb and 10 k have been realized by using a conventional 0.15 μm FLASH technology. Si nanocrystals are deposited on top of tunnel oxide by chemical vapor deposition. Properties of the memory cell have been investigated both for NAND and NOR applications in terms of program/erase window and programming times. Suitable program/erase threshold voltage window can be achieved with fast voltage pulses by adequate choice of tunnel and control dielectric. The feasibility of dual bit storage is also pro…

Continuous-wave, double-pass second-harmonic generation with 60% efficiency in a single MgO:PPSLT crystal

2014

We present a double-pass scheme for high-efficiency, high-power, second-harmonic generation (SHG) in a single MgO-doped periodically poled stoichiometric lithium tantalate (MgO:PPSLT) crystal. The device is pumped by a single-frequency, continuous-wave fiber amplifier laser system at a wavelength of 1091 nm. For the double-pass scheme, a conversion efficiency of 60% and a harmonic power of 12.8 W at a wavelength of 545.5 nm with a high beam quality of (M2<1.2) is achieved. Compared to single-pass SHG, a double-pass enhancement factor of more than two is observed at the highest fundamental pump power.

At-wavelength inspection of sub-40 nm defects in extreme ultraviolet lithography mask blank by photoemission electron microscopy.

2007

A new at-wavelength inspection technology to probe nanoscale defects buried underneath Mo/Si multilayers on an extreme ultraviolet (EUV) lithography mask blank has been implemented using EUV photoemission electron microscopy (EUV-PEEM). EUV-PEEM images of programmed defect structures of various lateral and vertical sizes recorded at an ~13.5 nm wavelength show that 35 nm wide and 4 nm high buried line defects are clearly detectable. The imaging technique proves to be sensitive to small phase jumps, enhancing the edge visibility of the phase defects, which is explained in terms of a standing wave enhanced image contrast at resonant EUV illumination.

Actinic EUVL mask blank defect inspection by EUV photoelectron microscopy

2006

A new method for the actinic at-wavelength inspection of defects inside and ontop of Extreme Ultraviolet Lithography (EUVL) multilayer-coated mask blanks is presented. The experimental technique is based on PhotoElectron Emission Microscopy (PEEM) supported by the generation of a standing wave field inside and above the multilayer mask blank when illuminated near the resonance Bragg wavelength at around 13.5 nm wavelength. Experimental results on programmed defect samples based on e-beam lithographic structures or PSL equivalent silica balls overcoated with an EUV multilayer show that buried defects scaling down to 50 nm in lateral size are detectable with further scalability down to 30 nm …

Laser Beam Lithography For 3-D Surface Patterning

1993

A low power laser processing unit, for microlithographic applications on non-planar surfaces, is described. By combining proper laser beam handling, micropositioning, software control and surface coating techniques, a 5-axis robotic system for laser writing has been set up. Light from a He-Cd laser source is fiber-delivered to a writing head, which moves around a resist coated solid object. After exposure, traditional wet processing can be applied. The unit is capable of patterning metal films deposited on samples up to a size of 50x50x100 mm, with 5 micrometer spatial resolution. An application in 3-D circuit fabrication is presented.