Search results for "electronics"

showing 10 items of 4340 documents

All-optical and electro-optical active plasmonic telecom components

2011

Active plasmonics is an attractive emerging field in which the ability to control the surface plasmon polariton (SPP) propagation finds many applications such as realization of fully functional integrated photonic circuitry. We demonstrate both numerically and experimentally switching of the SPP transmission based on two different approaches namely the all-optical and electro-optical at telecom wavelengths. The plasmonic component consists of a compact and efficient SPP switch utilizing highly sensitive ring resonator which has high sensitivity to the refractive index changes. Fabrication was done via e-beam lithography utilizing advanced proximity corrections. The compenents were character…

Materials sciencebusiness.industrySurface plasmonPhysics::OpticsSurface plasmon polaritonResonatorOpticsOptoelectronicsNear-field scanning optical microscopePhotonicsbusinessTelecommunicationsRefractive indexPlasmonElectron-beam lithographyAdvanced Photonics
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Electrical excitation of surface plasmons by an individual carbon nanotube transistor.

2013

We demonstrate here the realization of an integrated, electrically driven, source of surface plasmon polaritons. Light-emitting individual single-walled carbon nanotube field effect transistors were fabricated in a plasmonic-ready platform. The devices were operated at ambient conditions to act as an electroluminescence source localized near the contacting gold electrodes. We show that photon emission from the semiconducting channel can couple to propagating surface plasmons developing in the electrical terminals. Our results show that a common functional element can be operated for two different platforms emphasizing thus the high degree of compatibility between state-of-the-art nano-optoe…

Materials sciencebusiness.industrySurface plasmonTransistorPhysics::OpticsGeneral Physics and AstronomyCarbon nanotubeElectroluminescenceSurface plasmon polaritonlaw.inventionlawElectrodeOptoelectronicsField-effect transistorbusinessPlasmonPhysical review letters
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Space-time features of THz emission from optical rectification in sub-wavelength areas

2011

We present our investigation on the THz space-time emission characteristic induced by the non-paraxial generation regime in highly localized THz generation via optical rectification on sub-wavelength areas.

Materials sciencebusiness.industryTerahertz radiationPhysics::OpticsNonlinear opticsTeraHertz science and deviceSettore ING-INF/01 - ElettronicaTerahertz spectroscopy and technologyOptical pumpingOptical rectificationOpticsRectificationMicroscopyOptoelectronicsNear-field scanning optical microscopebusiness
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Affordable, ultra-broadband coherent detection of terahertz pulses via CMOS-compatible solid-state devices

2017

We demonstrate the first fully solid-state technique for the coherent detection of ultra-broadband THz pulses (0.1-10 THz), relying on the electric-field-induced second-harmonic generation attained in integrated CMOS-compatible devices.

Materials sciencebusiness.industryTerahertz radiationSpectral densitySecond-harmonic generationSettore ING-INF/02 - Campi Elettromagnetici02 engineering and technology021001 nanoscience & nanotechnologySettore ING-INF/01 - Elettronica01 natural sciencesElectromagnetic radiationTerahertz spectroscopy and technologyOpticsNonlinear optics Ultrafast optics Far infrared or terahertz Solid state detectorsElectric field0103 physical sciencesBroadbandOptoelectronicsHeterodyne detection010306 general physics0210 nano-technologybusinessConference on Lasers and Electro-Optics
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Spatial and spectral properties of small area THz generation for sub-wavelength microscopy

2010

A highly localized THz source is a promising candidate for sub-wavelength microscopy, due to its superior radiation power throughput with respect to others near-field techniques. Here, we report on the spatial and the spectral near-field properties of our highly localized THz source.

Materials sciencebusiness.industryTerahertz radiationSpectral propertiesPhysics::OpticsNonlinear opticsRadiationTerahertz sourcesSub wavelengthOpticsMicroscopyOptoelectronicsnonlinear optics terahertz spectroscopybusinessThroughput (business)Image resolution35th International Conference on Infrared, Millimeter, and Terahertz Waves
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Q -switched and modelocked all-fiber lasers based on advanced acousto-optic devices

2011

The interest in all-fiber lasers is stimulated by the inherent advantages they have over bulk lasers in aspects such as heat dissipation and robustness. The performance of Q-switched and modelocked fiber lasers can benefit enormously from the development of all-fiber configurations. A fiber laser with strictly all-fiber components can fulfil the requirements of mechanical stability, low maintenance, enhanced power efficiency, simplified assembly process, and low cost. In this framework, recent developments infiber acousto-optic devices are reviewed that have demonstrated new possibilities for actively Q-switched distributed feedback fiber lasers, modelocking lasers and doubly active Q-switc…

Materials sciencebusiness.industryThermal management of electronic devices and systemsCondensed Matter PhysicsLaserQ-switchingAtomic and Molecular Physics and OpticsElectronic Optical and Magnetic Materialslaw.inventionAll fiberlawRobustness (computer science)Fiber laserOptoelectronicsA fibersbusinessElectrical efficiencyLaser & Photonics Reviews
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Characterization of thin superconducting YBaCuO-films by Raman-spectroscopy

1988

We have investigated thin sputtered films of the high Tc material YBa2Cu3O7 by means of Raman spectroscopy at different stages of the preparation process. We find that the films are amorphous after sputtering. The Raman spectra indicate that random polycrystalline layers, as well as crystalline layers with preferred orientation, are obtained by an additional thermal treatment.

Materials sciencebusiness.industryThermal treatmentMicrostructureCondensed Matter PhysicsAmorphous solidElectronic Optical and Magnetic Materialssymbols.namesakeSputteringsymbolsOptoelectronicsddc:530General Materials ScienceCrystalliteThin filmRaman spectroscopybusinessRaman scatteringZeitschrift f�r Physik B Condensed Matter
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Ion production from solid state laser ion sources.

2010

Laser ion sources based on resonant excitation and ionization of atoms are well-established tools for selective and efficient production of radioactive ion beams. Recent developments are focused on the use of the state-of-the-art all solid-state laser systems. To date, 35 elements of the periodic table are available from laser ion sources based on tunable Ti:sapphire lasers. Recent progress in this field regarding the establishment of suitable optical excitation schemes for Ti:sapphire lasers are reported.

Materials sciencebusiness.industryTi:sapphire laserPhysics::OpticsParticle acceleratorLaserlaw.inventionIonlawSolid-state laserIonizationSapphireOptoelectronicsPhysics::Atomic PhysicsAtomic physicsbusinessInstrumentationTunable laserThe Review of scientific instruments
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Flexible Laser Tracing Systems for Defining Thin Film Hybrid Geometries

1994

A recent programme of technical collaboration between Alelco, DIE of Palermo and CRES of Monreale has led to the development and operative confirmation of a technique for delineating conductive microgeometries on various types of Substrates. This technique, using a flexible System of laser microlithography on planar (2-D) or three-dimensional (3-D) surfaces, has led to the development of several types of thin film components for use at both low and high frequencies. © 1994, MCB UP Limited

Materials sciencebusiness.industryTracingLaser writing Thin FilmCondensed Matter PhysicsLaserSettore ING-INF/01 - ElettronicaAtomic and Molecular Physics and OpticsDie (integrated circuit)Surfaces Coatings and FilmsElectronic Optical and Magnetic Materialslaw.inventionPlanarOpticslawOptoelectronicsElectrical and Electronic EngineeringThin filmbusinessElectrical conductorMicroelectronics International
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Hot carrier effects in n-MOSFETs with SiO2/HfO2/HfSiO gate stack and TaN metal gate

2009

Charge trapping and trap generation in field-effect transistors with SiO2/HfO2/HfSiO gate stack and TaN metal gate electrode are investigated under uniform and non-uniform charge injection along the channel. Compared to constant voltage stress (CVS), hot carrier stress (HCS) exhibits more severe degradation in transconductance and subthreshold swing. By applying a detrapping bias, it is demonstrated that charge trapping induced degradation is reversible during CVS, while the damage is permanent for hot carrier injection case. © 2008 Elsevier B.V. All rights reserved.

Materials sciencebusiness.industryTransconductanceTransistorTrappingCondensed Matter PhysicsSettore ING-INF/01 - ElettronicaAtomic and Molecular Physics and OpticsSurfaces Coatings and FilmsElectronic Optical and Magnetic Materialslaw.inventionStress (mechanics)lawElectrodeOptoelectronicsDegradation (geology)High-k dielectrics Hot carrier stress Constant voltage stressElectrical and Electronic EngineeringMetal gatebusinessHot-carrier injection
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