Search results for "element"
showing 10 items of 13601 documents
Polarization and acoustic properties of barium-modified lead-free potassium–sodium niobate ceramics
2017
The publication costs of this article were covered by the Estonian Academy of Sciences and the University of Tartu.
High-frequency electrodeless lamps in argon–mercury mixtures
2005
In this paper, numerical and experimental investigations of high-frequency (HF) electrodeless lamps in argon–mercury mixtures are performed. The intensities of the mercury spectral lines having wavelengths λ = 404.66, 435.83, 546.07 nm (7 3S1–6 3P0,1,2) and the resonance line λ = 253.7 nm (6 3 P1–6 1S0) are measured at a wide range of mercury pressures, varying the HF generator current and argon filling pressure. A stationary self-consistent model of HF electrodeless discharge lamp is developed including kinetics of the excited mercury and argon atomic states. Based on the developed model, the radiation characteristics of the discharge plasma are calculated. Numerical simulation of the line…
Production of Nano-Sized Co<sub>3</sub>O<sub>4</sub> by Pyrolysis of Organic Extracts
2016
The most promising application field of materials based on nano-sized Co3O4 is catalysis. The method of production is one of the factors, which greatly affects the catalytic activity of Co3O4 catalysts. The aim of this research is to study possibilities of a new promising extractive-pyrolytic method (EPM) for the production of Co3O4 nanopowders and silica- and ceria-supported Co3O4 nanocomposites. Solutions of cobalt hexanoate in hexanoic acid and trioctylammonium tetrachlorocobaltate in toluene preliminary produced by solvent extraction were used as precursors. The precursors’ thermal stability, phase composition, morphology and the magnetic properties of the final products of pyrolysis we…
Pressure-induced insulator-to-metal transition in α-SnWO4
2016
In-situ high-pressure W L1 and L3 edges x-ray absorption and mid-infrared spectroscopies complemented by first-principles calculations suggest the existence of pressure- induced insulator-to-metal transition in α-SnWO4 in the range of 5-7 GPa. Its origin is explained by a symmetrization of metal-oxygen octahedra due to a strong interaction of Sn 5s, W 5d and O 2p states along the b-axis direction, leading to a collapse of the band gap.
Silicon Surface Passivation by ALD-Ga2O3: Thermal vs. Plasma-Enhanced Atomic Layer Deposition
2020
Silicon surface passivation by gallium oxide (Ga2O3) thin films deposited by thermal- and plasma-enhanced atomic layer deposition (ALD) over a broad temperature range from 75 °C to 350 °C is investigated. In addition, the role of oxidant (O3 or O-plasma) pulse lengths insufficient for saturated ALD-growth is studied. The material properties are analyzed including the quantification of the incorporated hydrogen. We find that oxidant dose pulses insufficient for saturation provide for both ALD methods generally better surface passivation. Furthermore, different Si surface pretreatments are compared (HF-last, chemically grown oxide, and thermal tunnel oxide). In contrast to previous reports, t…
Atomic Layer Deposition and Properties of Lanthanum Oxide and Lanthanum-Aluminum Oxide Films
2006
Atomic layer deposition (ALD) of lanthanum oxide on glass and silicon substrates was examined using lanthanum silylamide, La[N(SiMe 3 ) 2 ] 3 , and water as precursors in the substrate temperature range of 150-250 °C. The effect of pulse times and precursor evaporation temperature on the growth rate and refractive index was investigated. The films remained amorphous regardless of the deposition conditions. The resulting La 2 O 3 films contained noticeable amounts of hydrogen and silicon and were chemically unstable while stored in ambient air. Lanthanum aluminum oxide films were achieved with stoichiometry close to that of LaAlO 3 at 225°C from La[N(SiMe 3 ) 2 ] 3 , Al(CH 3 ) 3 , and H 2 O.…
Exploring the transport properties of equatorially low coordinated erbium single ion magnets
2019
Single-molecule spin transport represents the lower limit of miniaturization of spintronic devices. These experiments, although extremely challenging, are key to understand the magneto-electronic properties of a molecule in a junction. In this context, theoretical screening of new magnetic molecules provides invaluable knowledge before carrying out sophisticated experiments. Herein, we investigate the transport properties of three equatorially low-coordinated erbium single ion magnets with C3v symmetry: Er[N(SiMe3)2]3 (1), Er(btmsm)3 (2) and Er(dbpc)3 (3), where btmsm=bis(trimethylsilyl)methyl and dbpc=2,6-di-tert-butyl-p-cresolate. Our ligand field analysis, based on previous spectros…
Electromagnetic and Thermal Modelling for Calculating Ageing Rate of Distribution Transformers
2018
Prediction of the lifetime for transformers is very important for maintenance and asset management. Finite element analysis was performed on a 5 MVA distribution transformers with aluminium foil-type windings and voltage rating 6600 V/23000 V. Electromagnetic modelling is implemented on the full three-phase transformer to calculate distributed losses, taking the skin effect into account. To reduce the computational burden, the distributed losses in one phase are used to analyse temperature rise in one phase of the transformer. The temperature rise results were used to determine the ageing rate of the transformer. Further, the influence of ambient temperature and cooling on the temperature r…
The effects of thermal treatment on structural, morphological and optical properties of electrochemically deposited Bi2S3 thin films
2017
Abstract Thin films of bismuth sulfide (Bi 2 S 3 ) have been electrochemically deposited on indium–doped tin oxide substrates from aqueous solutions of Bi(NO 3 ) 3 , ethylene diamine tetraacetic acid (EDTA) and Na 2 S 2 O 3 . The structural properties of the films were characterized using X–ray diffraction and high–resolution transmission electron microscopy analyses. The film crystallizes in an orthorhombic structure of Bi 2 S 3 along with metallic bismuth. Thermal annealing of the prepared film in sulfur atmosphere improves its crystallinity and cohesion. The band gap values of the deposited film before and after annealing at 400 °C were found to be 1.28 and 1.33 eV, respectively.
Flash annealing influence on structural and electrical properties of TiO2/TiO/Ti periodic multilayers
2014
Abstract Multilayered structures with a 40 nm period composed of titanium and two different titanium oxides, TiO and TiO 2 , were accurately produced by DC magnetron sputtering using the reactive gas pulsing process. These multilayers were sputtered onto Al 2 O 3 sapphire to avoid substrate compound diffusion during flash annealing (ranging from 350 °C to 550 °C). Structure and composition of these periodic TiO 2 /TiO/Ti stacks were investigated by X-ray diffraction, X-ray photoemission spectroscopy and transmission electronic microscopy techniques. Two crystalline phases α-Ti and fcc-TiO were identified in the metallic-rich sub-layers whereas the oxygen-rich ones were composed of a mixture…