Search results for "erros"

Kierrosluku ja yhdesti yhtenäiset alueet

2011

Al2O3 ALD films grown using TMA + rare isotope 2H216O and 1H218O precursors

2021

In this work hydrogen and oxygen migration and exchange reactions in the atomic layer deposited (ALD) Al2O3 thin films were studied together with hydrogen incorporation by varying deposition parameters. Al2O3 films deposited at low temperatures can contain more than 20 at. % of hydrogen. Both higher temperature and longer purge length decrease the hydrogen and carbon concentrations significantly. In order to track the hydrogen and oxygen movement in the films, heavy water (2H216O) and oxygen-18 enriched water (1H218O) were used as precursors in combination with trimethylaluminium (TMA). Different isotopes of the same element were quantified by means of time-of-flight elastic recoil detectio…

Politiikka urbaanissa betonilähiössä

1998

Thermomechanical properties of aluminum oxide thin films made by atomic layer deposition

2022

Funding Information: This work was carried out within the MECHALD project funded by Business Finland and is linked to the Finnish Centers of Excellence in Atomic Layer Deposition (Ref. No. 251220) and Nuclear and Accelerator Based Physics (Ref Nos. 213503 and 251353) of the Academy of Finland. Publisher Copyright: © 2022 Author(s). In microelectromechanical system devices, thin films experience thermal processing at temperatures some cases exceeding the growth or deposition temperature of the film. In the case of the thin film grown by atomic layer deposition (ALD) at relatively low temperatures, post-ALD thermal processing or high device operation temperature might cause performance issues…

Metsäpalojen vaikutus kangasvuokon (Pulsatilla vernalis L. Mill.) menestymiseen

2008

Sodanjälkeisen Suomen rakentamisesta : arkkitehti Raimo Halosen ura ja tuotanto Jyväskylän kantakaupunkialueella vuosina 1956-1997

2013

Atomic scale surface modification of TiO2 3D nano-arrays : plasma enhanced atomic layer deposition of NiO for photocatalysis

2021

Here we report the development of a new scalable and transferable plasma assisted atomic layer deposition (PEALD) process for the production of uniform, conformal and pinhole free NiO with sub-nanometre control on a commercial ALD reactor. In this work we use the readily available nickel precursor nickelocene in conjunction with O2 plasma as a co-reagent (100 W) over a temperature range of 75–325 °C. An optimised growth per cycle of 0.036 nm was obtained at 250 °C with uniform thickness and coverage on scale-up to and including an 6 inch Si wafer (with a 200 nm thermal SiO2 top layer). The bulk characteristics of the NiO thin films were comprehensively interrogated by PXRD, Raman spectrosco…

El diario de Augusto Monterroso: La letra E

2007

In El diario de Augusto Monterroso: La letra E (in Assunta Polizzi, Parole discorsi testi nelle culture ispaniche, a cura di, Palermo, Flaccovio, 2007, pp.21-36) the author reflects on the genre of the journal within the framework of the ‘modern’, halfway between the existential testimony and an exercise in writing; fiction and confession. The paper examines the journal of Augusto Monterroso, La letra E, a text focusing on the image of a writer continually searching for adequate forms of expression and his doubts on the very act of writing. La letra E thus ends up being a further testimony to the commitment of the writer to the written word and –at the same time- to his clear intention to p…

Microbial controls of greenhouse gas emissions from boreal lakes

2015

Structural and optical characterization of ZnS ultrathin films prepared by low-temperature ALD from diethylzinc and 1.5-pentanedithiol after various …

2019

The structural and optical evolution of the ZnS thin films prepared by atomic layer deposition (ALD) from the diethylzinc (DEZ) and 1,5-pentanedithiol (PDT) as zinc and sulfur precursors was studied. A deposited ZnS layer (of about 60 nm) is amorphous, with a significant S excess. After annealing, the stoichiometry improved for annealing temperatures &ge