Search results for "grain"

showing 10 items of 752 documents

Studies and Researches on the Obtaining of Sintered Gradual Porous Structures by Irregular Nickel Powders Sedimentation

2012

The aim of this work is to obtain sintered porous membranes with graded structure for microfiltration by sedimentation and sintering of metallic powders. Our previous studies have demonstrated the possibility of obtaining sintered porous materials with graded structure by sedimentation. In this paper, irregular nickel particles were used having a grain size in the 2-90 µm range evaluated using scanning electron microscopy and laser scattering particle size analyzer. The powders were sedimented into a sintering die in a sedimentation medium consisting of water and dispersant agent. After drying, the samples were sintered at 1000°C for 10 minutes in vacuum (~1•10-3 Pa). The structures obtaine…

Materials scienceScanning electron microscopeMicrofiltrationMineralogySinteringPorosimetryCondensed Matter PhysicsAtomic and Molecular Physics and OpticsGrain sizelaw.inventionlawGeneral Materials ScienceComposite materialPorous mediumPorosityFiltrationSolid State Phenomena
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Improved Cu2O/AZO Heterojunction by Inserting a Thin ZnO Interlayer Grown by Pulsed Laser Deposition

2019

Cu2O/ZnO:Al (AZO) and Cu2O/ZnO/AZO heterojunctions have been deposited on glass substrates by a unique three-step pulsed laser deposition process. The structural, optical, and electrical properties of the oxide films were investigated before their implementation in the final device. X-ray diffraction analysis indicated that the materials were highly crystallized along the c-axis. All films were highly transparent in the visible region with enhanced electrical properties. Atomic force and scanning electron microscopies showed that the insertion of a ZnO layer between the Cu2O and AZO films in the heterojunction enhanced the average grain size and surface roughness. The heterojunctions exhibi…

Materials scienceScanning electron microscopeOxideCu2O02 engineering and technology01 natural sciencesPulsed laser depositionchemistry.chemical_compoundElectronic Electrical and Electronic Engineering0103 physical sciencesMaterials ChemistrySurface roughnessElectrical and Electronic EngineeringElectronic band structurepulsed laser depositionLeakage (electronics)010302 applied physicsbusiness.industryOptical and Magnetic MaterialAZOHeterojunction021001 nanoscience & nanotechnologyCondensed Matter PhysicsGrain sizeElectronic Optical and Magnetic Materialssolar cellchemistryZnOOptoelectronicsHeterojunction0210 nano-technologybusinessJournal of Electronic Materials
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Structural defects in Hg1−xCdxI2 layers grown on CdTe substrates by vapor phase epitaxy

1997

Hg1−xCdxI2 20–25-μm-thick layers with a uniform composition in the range of x = 0.1–0.2 were grown on CdTe substrates by vapor phase epitaxy (VPE). The growth was carried out using an α-HgI2 polycrystalline source at 200 °C and in the time range of 30–100 h. The layers were studied by scanning electron microscopy (SEM) and high resolution synchrotron x-ray topography (SXRT). The SEM and SXRT images of Hg1−xCdxI2 VPE layers allow one to identify the defects affecting the layer structure. The two main types of structural defects in the layers are subgrain boundaries and densely spaced striations similar to those referred generally to as vapor grown HgI2 bulk crystals. The effect of the growth…

Materials scienceSemiconductor MaterialsGrain BoundariesScanning electron microscopeVapor phaseGeneral Physics and AstronomyMercury Compounds ; Cadmium Compounds ; Semiconductor Materials ; Vapour Phase Epitaxial Growth ; Semiconductor Growth ; Semiconductor Epitaxial Layers ; Scanning Electron Microscopy ; X-Ray Topography ; Grain BoundariesEpitaxylaw.inventionlaw:FÍSICA [UNESCO]Cadmium CompoundsSemiconductor Epitaxial Layersbusiness.industryMercury CompoundsX-Ray TopographyUNESCO::FÍSICASynchrotronCadmium telluride photovoltaicsCrystallographySemiconductor GrowthOptoelectronicsVapour Phase Epitaxial GrowthGrain boundaryCrystalliteScanning Electron MicroscopybusinessLayer (electronics)
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An automated procedure for computing the packing properties of dense and locked sands by image analysis of thin sections

2014

The macroscopic mechanical behaviour of dense sands originates to a great extent from their microstructural characteristics such as the coordination number, the grain contact and the packing density indexes. The study of intergranular contacts and the reckoning of these indexes may be carried out on planar images of the grains either by means of time-consuming visual inspection assisted by CAD or by automatic image analysis. An innovative method for the automatic determination of microstructural characteristics of sands based on image analysis of thin section is proposed. Tests performed on a locked sand show that the proposed method is much more effective, convenient and faster than the us…

Materials scienceSettore ICAR/07 - GeotecnicaCoordination numberAcousticsComputingMethodologies_IMAGEPROCESSINGANDCOMPUTERVISIONGeneral Physics and AstronomyGranular mediaCADIntergranular corrosionImage (mathematics)Visual inspectionSphere packingPlanarMechanics of MaterialsSettore ICAR/04 - Strade Ferrovie Ed AeroportiGrain contact Locked sand Image analysis Segmentation technique Packing density Coordination numberGeneral Materials ScienceGranular Matter
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Effect of silicon on corrosion resistance of Ti–Si alloys

2011

Abstract The corrosion resistance of Ti–Si alloys has been studied in acid solutions and the alloys exhibit a high resistance to corrosion. SEM examinations combined with EDAX allowed to conclude that the passive films on Ti–Si alloys are mainly composed of TiO 2 /SiO 2 oxides. XPS analysis indicated the formation of Si–O and Si–O–Ti bonds in the passive film, respectively corresponding to SiO 2 and Si-doping TiO 2 . The effect of silicon on the corrosion was correlated to the formation of a stable SiO 2 film, Si-doping on TiO 2 and the extended lattice imperfections formed along TiO 2 /SiO 2 grain boundaries and phase-boundaries. The calculated donor densities based on the point defect mod…

Materials scienceSiliconMechanical EngineeringAlloyMetallurgyPassivitychemistry.chemical_elementengineering.materialCondensed Matter PhysicsCorrosionX-ray photoelectron spectroscopyChemical engineeringchemistryMechanics of MaterialsengineeringGeneral Materials ScienceGrain boundaryMaterials Science and Engineering: B
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Scanning electron microscopy analysis of defect clusters in multicrystalline solar grade silicon solar cells

2014

Solar cells from an identical commercial manufacturing unit have been investigated by electroluminescence to first detect the defect clusters. A further analysis has been done by scanning electron microscopy in secondary electron imaging mode to understand the propagation mechanism of defects. It appears that defect cluster boundaries can be very sharp or spread in the bulk with little apparent effect on the overall cell efficiency. And it is shown that grain boundaries act clearly as arrests to further propagation of these defects.

Materials scienceSiliconScanning electron microscopebusiness.industryfood and beverageschemistry.chemical_elementElectroluminescenceSecondary electronsPolymer solar cellMonocrystalline siliconchemistryCluster (physics)OptoelectronicsGrain boundarybusiness2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)
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Electrical and structural characterization of metal-oxide-semiconductor capacitors with silicon rich oxide

2001

Metal-oxide-semiconductor capacitors in which the gate oxide has been replaced with a silicon rich oxide (SRO) film sandwiched between two thin SiO2 layers are presented and investigated by transmission electron microscopy and electrical measurements. The grain size distribution and the amount of crystallized silicon remaining in SRO after annealing have been studied by transmission electron microscopy, whereas the charge trapping and the charge transport through the dots in the SRO layer have been extensively investigated by electrical measurements. Furthermore, a model, which explains the electrical behavior of such SRO capacitors, is presented and discussed. © 2001 American Institute of …

Materials scienceSiliconbusiness.industryAnnealing (metallurgy)OxideGeneral Physics and Astronomychemistry.chemical_elementMineralogycapacitors electrical measurementsSettore ING-INF/01 - ElettronicaGrain sizeSettore FIS/03 - Fisica Della Materialaw.inventionchemistry.chemical_compoundCapacitorchemistryGate oxideTransmission electron microscopylawOptoelectronicsElectrical measurementsbusiness
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PLZT—Synthesis, sintering and ceramics microstructure

2006

Abstract Producing of PLZT powders by original two-stage co-precipitation method from mixed solution of inorganic salts ZrOCl 2 ·8H 2 O, TiCl 4 , La(NO 3 ) 3 ·6H 2 O, Pb(NO 3 ) 2 , was carried out. The sequence of phases formed during PLZT synthesis has been studied by X-ray and DTA analysis. Ceramic samples were prepared by two-stage hot-pressing technology. Dielectric, ferroelectric and optical properties have been measured. Ceramic microstructures were studied by SEM with energy dispersive analytical capability (EDX). The fine-grained microstructure was quite uniform with the average grain size of 5–7 μm, without internal or grain boundary porosity. The optical transmittance of ceramic p…

Materials scienceSinteringMineralogyHot pressingMicrostructureGrain sizevisual_artDifferential thermal analysisMaterials ChemistryCeramics and Compositesvisual_art.visual_art_mediumGrain boundaryCeramicElectroceramicsComposite materialJournal of the European Ceramic Society
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Coarsened Lattice Model for Random Granular Systems

1998

In random systems consisting of grains with size distributions the transport properties are difficult to explore by network models. However, the concentration dependence of effective conductivity and its critical properties can be considered within coarsened lattice model proposed that takes into account information from experimentally known size histograms. For certain classes of size distributions the specific local arrangements of grains can induce either symmetrical or unsymmetrical critical behaviour at two threshold concentrations. Using histogram related parameters the non-monotonic behaviour of the conductor-insulator and conductor-superconductor threshold is demonstrated.

Materials scienceStatistical Mechanics (cond-mat.stat-mech)Critical phenomenaFOS: Physical sciencesDisordered Systems and Neural Networks (cond-mat.dis-nn)ConductivityCondensed Matter - Disordered Systems and Neural NetworksCondensed Matter PhysicsGrain sizeElectronic Optical and Magnetic MaterialsDistribution functionPercolationHistogramStatistical physicsLattice model (physics)Condensed Matter - Statistical MechanicsNetwork model
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Stress/strain effects on electrochemical activity: Metallurgical/mechanical/interactions and surface reactivity

2021

Abstract Tribocorrosion is of complex nature as it involves multiscale interactions between mechanical, (electro-)chemical, physical, and material factors. The influence of mechanical stresses/strains on the surface reactivity of metallic alloys is described here. The electrochemical behavior and the corrosion resistance of engineering alloys are discussed in the presence of compressive and tensile stresses through different examples. The role of physical (formation of steps, roughness, microcracks), metallurgical (dislocations, crystallographic texture, and grain size), and chemical (passive film composition) changes induced by plastic deformation on electrochemical behavior and corrosion …

Materials scienceTribocorrosionUltimate tensile strengthMetallurgyStress–strain curveSurface finishTexture (crystalline)ElectrochemistryGrain sizeCorrosion
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