Search results for "hall effect"
showing 10 items of 702 documents
Thickness dependence of anomalous Hall conductivity in L10-FePt thin film
2019
L10 ordered alloys are ideal models for studying the anomalous Hall effect (AHE), which can be used to distinguish the origin from intrinsic (from band structure) or from extrinsic effects (from impurity scatterings). In the bulk limit of L10 ordered FePt films, the AHE is considered to be dominated by the intrinsic contribution, which mainly comes from the strong spin-orbit interaction (SOI) of Pt atoms and exchange-splitting of Fe atoms. The study of anomalous Hall conductivity (AHC) of L10-FePt thin films is of particular interest for its application in spintronic devices. In order to reduce the effects of defects such as grain boundaries, we chose SrTiO3 as the substrate which has a ver…
Tunable 2D-gallium arsenide and graphene bandgaps in a graphene/GaAs heterostructure : an ab initio study
2019
The bandgap behavior of 2D-GaAs and graphene have been investigated with van der Waals heterostructured into a yet unexplored graphene/GaAs bilayer, under both uniaxial stress along c axis and different planar strain distributions. The 2D-GaAs bandgap nature changes from [Formula: see text]-K indirect in isolated monolayer to [Formula: see text]-[Formula: see text] direct in graphene/GaAs bilayer. In the latter, graphene exhibits a bandgap of 5 meV. The uniaxial stress strongly affects the graphene electronic bandgap, while symmetric in-plane strain does not open the bandgap in graphene. Nevertheless, it induces remarkable changes on the GaAs bandgap-width around the Fermi level. However, w…
Filling carbon nanotubes with magnetic particles
2013
Magnetic carbon nanotube composites were obtained by filling carbon nanotubes with paramagnetic iron oxide particles. Measurements indicate that these functionalized nanotubes are superparamagnetic at room temperature. Details about the production and characterization of these materials are described along with the experimental procedures employed. These magnetic carbon nanotubes have the potential to be used in a wide range of applications, in particular, the production of nanofluids, which can be controlled by appropriate magnetic fields.
Optical properties of an exciton bound to an ionized impurity in ZnO/SiO2 quantum dots
2015
Abstract The energy of the ground and the excited states for the exciton and the binding energy of the acceptor–donor exciton complexes ( A − , X ) and ( D + , X ) as a function of the radius for an impurity position located in the center in the spherical ZnO quantum dots (QDs) embedded in a SiO2 matrix are calculated using the effective mass approximation under the diagonalzation matrix technique, including a three-dimensional confinement of carrier in the QD and assuming a finite depth. Numerical results show that the binding energy of the acceptor–donor exciton complexes is very sensitive to the quantum dot size. These results could be particularly helpful since they are closely related …
Self-Assembled Zinc Oxide Quantum Dots Using Spray Pyrolysis Methodology
2011
Self-assembled ZnO quantum dots (QDs) have been obtained on different substrates by using the atmospheric spray pyrolysis methodology under well-defined growth conditions. The evolution of size and...
Optical properties of acceptor–exciton complexes in ZnO/SiO2 quantum dots
2011
Abstract The binding energy E b of the acceptor–exciton complex (A − ,X) as a function of the radius (or of the impurity position of the acceptor) and the normalized oscillator strength of (A − ,X) in spherical ZnO quantum dots (QDs) embedded in a SiO 2 matrix are calculated using the effective-mass approximation under the diagonalzation matrix technique, including a three-dimensional confinement of the carrier in the QD and assuming a finite depth. Numerical results show that the binding energy of the acceptor–exciton complexes is particularly robust when the impurity position of the acceptor is in the center of the ZnO QDs. It has been clearly shown from our calculations that these physic…
Excitons in SiO2: a review
1992
Abstract In this paper, excitonic properties of crystalline and glassy SiO 2 are reviewed. Experimental spectroscopic data (optical absorption and reflection spectra, as well as spectra of luminescence and its excitation), luminescence decay kinetics at different temperatures, and photoelectric properties — photoconductivity and photoelectron emission — were used to determine excitons in SiO 2 . Information on migration of excitons was obtained on the basis of energy transport to impurity luminescence centers, the latter being detectors of quasiparticles. Determination of excitonic properties in glassy SiO 2 was based on the comparison of the observed phenomena in crystalline and glassy mat…
Phonon Dispersion of Wurtzite CdSe: The Bond Charge Model
2000
The phonon dispersion of wurtzite CdSe is presented along the main directions of the Brillouin zone. The study has been performed by using a bond charge model for wurtzite-type semiconductors with only six adjustable parameters. The results are compared against neutron scattering data and ab initio calculations. The phonon eigenvectors corresponding to the vibrational modes at the Γ-point are in very good agreement with the ab initio calculations.
Heusler Compounds at a Glance
2013
The class of Heusler compounds, including the XYZ and the X 2 YZ compounds, does not only have an endless number of members, but also a vast variety of properties can be found in this class of materials, ranging from semi-conductors, half-metallic ferromagnets, superconductors, and topological insulators to shape memory alloys. With this chapter, we would like to provide an overview of Heusler compounds, focusing on basis design principles, their properties and potential applications.
Electronic properties of *-oriented thin films
2007
Abstract To perform high precision measurements of the transport anisotropy, epitaxial, a *-oriented thin films of UPd 2 Al 3 have been prepared on LaAlO 3 (1 1 0) substrates. The critical temperature T c ≈ 1.75 K and the upper critical field B c 2 ≈ 3 T are comparable to typical bulk values. In contrast to UNi 2 Al 3 , we observed only a weak anisotropy in directional resistivity measurements, especially no dependence of the superconducting transition temperature on the direction of the applied current. Hall effect measurements show two characteristic minima at T = 16 K ≈ T N and T ≈ 6 K , which corresponds to features seen in earlier measurements on c *-oriented films.