Search results for "high voltage"

High Voltage Monolithic Active Pixel Sensors

2018

Ever higher demands on resolution and rate capability drive the development of particle tracking detectors. Especially at low momenta, multiple Coulomb scattering in the material of the detector is also strongly affecting the resolution of momentum measurements. While gas-based detectors such as drift chambers and time projection chambers can be built with very small amounts of material, their rate capability is limited by ageing and space charge effects. Hybrid semiconductor detectors on the other hand combine a depleted (silicon) sensor with a custom amplifier and readout chip. Pixelated devices especially can operate efficiently in very harsh rate and radiation environments such as the i…

The MuPix high voltage monolithic active pixel sensor for the Mu3e experiment

2015

Mu3e is a novel experiment searching for charged lepton flavor violation in the rare decay μ → eee. In order to reduce background by up to 16 orders of magnitude, decay vertex position, decay time and particle momenta have to be measured precisely. A pixel tracker based on 50 μm thin high voltage monolithic active pixel sensors (HV-MAPS) in a magnetic field will deliver precise vertex and momentum information. Test beam results like an excellent efficiency of >99.5% and a time resolution of better than 16.6 ns obtained with the MuPix HV-MAPS chip developed for the Mu3e pixel tracker are presented.

Ultra-stable implanted 83Rb/83mKr electron sources for the energy scale monitoring in the KATRIN experiment

2012

The KATRIN experiment aims at the direct model-independent determination of the average electron neutrino mass via the measurement of the endpoint region of the tritium beta decay spectrum. The electron spectrometer of the MAC-E filter type is used, requiring very high stability of the electric filtering potential. This work proves the feasibility of implanted 83Rb/83mKr calibration electron sources which will be utilised in the additional monitor spectrometer sharing the high voltage with the main spectrometer of KATRIN. The source employs conversion electrons of 83mKr which is continuously generated by 83Rb. The K-32 conversion line (kinetic energy of 17.8 keV, natural line width of 2.7 e…

MuPix10: First Results from the Final Design

2021

Many years of research and development of High Voltage Monolithic Active Pixel Sensors (HVMAPS) have culminated in the final design for the Mu3e pixel sensor. MuPix10 is a fully monolithic sensor with an active pixel matrix size of $20\times20\,\mathrm{mm}^2$ produced in the $180\,\mathrm{nm}$ HV-CMOS process at TSI Semiconductors. The pixel size is $80\times80\,\mathrm{\mu m}^2$. Hits are read out using a column-drain architecture and sent over up to four serial links with up to $1.6\,\left.\mathrm{Gbit}\middle/\mathrm{s}\right.$ each. By means of DC/DC converters and exclusive usage of on-chip biasing, MuPix10 is fully operable with a minimal set of electrical connections. This is an inte…

Overview of HVCMOS pixel sensors

2015

High voltage CMOS (HVCMOS) sensors are presently considered for the use in Mu3e experiment, ATLAS and CLIC. These sensors can be implemented in commercial HVCMOS processes. HVCMOS sensors feature fast charge collection by drift and high radiation tolerance. The sensor element is an n-well/p-type diode. This proceeding-paper gives an overview of HVCMOS projects and the recent results.

High-voltage monitoring with a solenoid retarding spectrometer at the KATRIN experiment

2014

The KATRIN experiment will measure the absolute mass scale of neutrinos with a sensitivity of m(ν) = 200meV/c(2) by means of an electrostatic spectrometer set close to the tritium β-decay endpoint at 18.6keV. Fluctuations of the energy scale must be under control within ±60mV (±3ppm). Since a precise voltage measurement in the range of tens of kV is on the edge of current technology, a nuclear standard will be deployed additionally. Parallel to the main spectrometer the same retarding potential will be applied to the monitor spectrometer to measure 17.8-keV K-conversion electrons of (83m)Kr. This article describes the setup of the monitor spectrometer and presents its first measurement resu…

Readout of the UFFO Slewing Mirror Telescope to detect UV/optical photons from Gamma-Ray Bursts

2013

The Slewing Mirror Telescope (SMT) was proposed for rapid response to prompt UV/optical photons from Gamma-Ray Bursts (GRBs). The SMT is a key component of the Ultra-Fast Flash Observatory (UFFO)-pathfinder, which will be launched aboard the Lomonosov spacecraft at the end of 2013. The SMT utilizes a motorized mirror that slews rapidly forward to its target within a second after triggering by an X-ray coded mask camera, which makes unnecessary a reorientation of the entire spacecraft. Subsequent measurement of the UV/optical is accomplished by a 10 cm aperture Ritchey-Chretien telescope and the focal plane detector of Intensified Charge-Coupled Device (ICCD). The ICCD is sensitive to UV/opt…

Estimating Terrestrial Neutron-Induced SEB Cross-Sections and FIT Rates for High-Voltage SiC Power MOSFETs

2019

Cross sections and failure in time rates for neutron-induced single-event burnout (SEB) are estimated for SiC power MOSFETs using a method based on combining results from heavy ion SEB experimental data, 3-D TCAD prediction of sensitive volumes, and Monte Carlo radiation transport simulations of secondary particle production. The results agree well with experimental data and are useful in understanding the mechanisms for neutron-induced SEB data.

Pulsed Electric Fields and High-Voltage Electrical Discharges-Assisted Extraction of Valuable Biocompounds and Biopolymers from Rapeseed By-Products

2017

Investigation on Cascode Devices for High Frequency Electrical Drives Applications

2019

In the last years a widespread development in the market of electrical drives employing high-speed electrical machines has occurred in various industrial fields, due to the extremely high power density that can be reached. Nevertheless, to maintain output power quality without using bulky filtering networks, DC-AC converters should be controlled by means of higher PWM switching frequencies. New switching device technologies, such as Field Effect Transistors based on SiC and GaN, are therefore gathering momentum in order to comply with the higher working frequencies. To operate under high frequencies and at the same time at high voltage levels, alternative circuital configurations for switch…