Search results for "impurities"

showing 10 items of 22 documents

Luminescence properties of chlorine molecules in glassy SiO 2 and optical fibre waveguides

2017

The support from Latvian Research Program IMIS 2, project “Photonics and materials for photonics” is acknowledged. K.K. was partially supported by the Collaborative Research Project of Materials and Structures Laboratory, Tokyo Institute of Technology. The publication costs of this article were covered by the Estonian Academy of Sciences and the University of Tartu.

010302 applied physicsMaterials scienceOptical fiberbusiness.industryGeneral Engineeringphotonicschemistry.chemical_elementoptical fibresamorphous SiO202 engineering and technology021001 nanoscience & nanotechnology01 natural scienceslaw.inventionCl2 impuritieschemistrylaw0103 physical sciencesChlorineluminescence:NATURAL SCIENCES:Physics [Research Subject Categories]MoleculeOptoelectronics0210 nano-technologyLuminescencebusinessProceedings of the Estonian Academy of Sciences
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Application of LA-ICP-MS as a rapid tool for analysis of elemental impurities in active pharmaceutical ingredients.

2014

The control of inorganic contaminants in active pharmaceutical ingredients has a significant role in the quality control of drug products. The concentration limits for metal residues in drug products have been defined by various regulatory guidelines. Laser ablation inductively coupled plasma mass spectrometry (LA-ICP-MS) is a powerful and fast analytical technique for multi-elemental analysis. A disadvantage in using LA-ICP-MS method is the lack of matrix reference materials for validation and calibration purposes. This article focuses on the handling strategy of laboratory-made matrix calibration standards for the quantification of elemental impurities in an active pharmaceutical ingredie…

Active ingredientChromatographyChemistryLaser ablation inductively coupled plasma mass spectrometryClinical BiochemistryAnalytical techniqueAnalytical chemistryPharmaceutical ScienceAnalytical ChemistryMatrix (chemical analysis)Pharmaceutical PreparationsLa icp msSpectrometry Mass Matrix-Assisted Laser Desorption-IonizationDrug DiscoveryCalibrationInorganic contaminantsElemental impuritiesDrug ContaminationSpectroscopyJournal of pharmaceutical and biomedical analysis
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Ca impurity in small mixed He-4-He-3 clusters

2009

The structure of small mixed helium clusters doped with one calcium atom has been determined within the diffusion Monte Carlo framework. The results show that the calcium atom sits at the He-4-He-3 interface. This is in agreement with previous studies, both experimental and theoretical, performed for large clusters. A comparison between the results obtained for the largest cluster we have considered for each isotope shows a clear tendency of the Ca atom to reside in a deep dimple at the surface of the cluster for He-4 clusters, and to become fully solvated for He-3 clusters. We have calculated the absorption spectrum of Ca around the 4s4p <- 4s(2) transition and have found that it is bluesh…

Atomic clustersFísicaCalciumMonte Carlo methodsPhysics::Atomic Physicsheliumimpurity absorption spectraquantum fluidsimpurities
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Change of the vortex core structure in two-band superconductors at the impurity-scattering-driven s±/s++ crossover

2017

We report a nontrivial transition in the core structure of vortices in two-band superconductors as a function of interband impurity scattering. We demonstrate that, in addition to singular zeros of the order parameter, the vortices there can acquire a circular nodal line around the singular point in one of the superconducting components. It results in the formation of the peculiar “moat”-like profile in one of the superconducting gaps. The moat-core vortices occur generically in the vicinity of the impurity-induced crossover between s± and s++ states. peerReviewed

Condensed Matter::Superconductivityimpurities in superconductorsmultiband superconductivityvortices in superconductorss-wave
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High‐temperature behavior of impurities and dimensionality of the charge transport in unintentionally and tin‐doped indium selenide

1993

A systematic study of the electron transport and shallow impurity distribution in indium selenide above room temperature or after an annealing process is reported by means of far‐infrared‐absorption and Hall‐effect measurements. Evidences are found for the existence of a large concentration of deep levels (1012–1013 cm−2), related to impurities adsorbed to stacking faults in this material. Above room temperature impurities can migrate from those defect zones and then become shallow in the bulk. The subsequent large increase of 3D electrons can change the dimensionality of the electron transport, which in most cases was 2D. The temperature dependence of the resistivity parallel to the c axis…

Electron mobilityInfrared SpectraAnnealing (metallurgy)Analytical chemistryGeneral Physics and Astronomychemistry.chemical_elementAnnealingchemistry.chemical_compound:FÍSICA [UNESCO]Hall effectImpurityElectrical resistivity and conductivityTin AdditionsSelenideDoped MaterialsIndium SelenidesHall EffectCondensed matter physicsTemperature DependenceDopingUNESCO::FÍSICAElectric ConductivityIndium Selenides ; Tin Additions ; Impurities ; Annealing ; Electric Conductivity ; Infrared Spectra ; Hall Effect ; Deep Energy Levels ; Temperature Dependence ; Doped MaterialsDeep Energy LevelschemistryIndiumImpuritiesJournal of Applied Physics
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Effects of Mn doping on dielectric properties of ferroelectric relaxor PLZT ceramics

2017

This work has been supported by Latvian state research program IMIS2 .

FerroelectricsMaterials scienceAnalytical chemistryPLZTGeneral Physics and Astronomychemistry.chemical_elementNanotechnology02 engineering and technologyDielectric01 natural sciencesOxygenIonsymbols.namesake0103 physical sciences:NATURAL SCIENCES:Physics [Research Subject Categories]Point defectsGeneral Materials ScienceCeramicDebye010302 applied physicsRelaxation (NMR)021001 nanoscience & nanotechnologyCrystallographic defectDipolechemistryDielectric propertiesvisual_artvisual_art.visual_art_mediumsymbolsImpurities in perovskites0210 nano-technologyMn impurityCurrent Applied Physics
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Theory of hydrogen and helium impurities in metals

1984

A powerful computational scheme is presented for calculating the static properties of light interstitials in metallic hosts. The method entails (i) the construction of the potential-energy field using the quasiatom concept, (ii) the wave-mechanical solution of the impurity distribution ("zero-point motion"), (iii) calculation of the forces exerted on the adjacent host atoms and their displacements, and (iv) iteration to self-consistency. We investigate self-trapping phenomena in bcc and fcc metals in detail, and calculate both the ground and low-lying excited states. Implications of the wave-mechanical or band picture to diffusion mechanisms and inelastic scattering experiments are discusse…

Materials scienceHydrogenchemistryImpurityPhysicshydrogenchemistry.chemical_elementmetalsheliumAtomic physicsInelastic scatteringimpuritiesHelium
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Production of zero energy radioactive beams through extraction across superfluid helium surface

2003

A radioactive Ra-223 source was immersed in superfluid helium at 1.2-1.7 K. Electric fields transported recoiled Rn-219 ions in the form of snowballs to the surface and further extracted them across the surface. The ions were focussed onto an aluminium foil and alpha particle spectra were taken with a surface barrier spectrometer. This enabled us to determine the efficiency for each process unambiguously. The pulsed second sound wave proved effective in enhancing the extraction of positive ions from the surface. Thus we offer a novel method for study of impurities in superfluid helium and propose this method for production of zero energy nuclear beams for use at radioactive ion beam facilit…

Materials scienceIon beamSpectrometerLiquid heliumSNOWBALLSAlpha particleNUCLEAR-SPIN POLARIZATIONCondensed Matter PhysicsElectronic Optical and Magnetic Materialslaw.inventionIonimpurities in superfluid heliumlawradioactive snowballsElectric fieldSecond soundPhysics::Accelerator PhysicsElectrical and Electronic EngineeringAtomic physicssecond sound waveradioactive ion beamsSuperfluid helium-4LIQUID HELIUMCORE IONSPhysica B: Condensed Matter
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Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films

2016

Plasma-enhanced atomic layer deposition was utilized to grow aluminum nitride (AlN) films on Si from trimethylaluminum and N2:H2 plasma at 200 °C. Thermal treatments were then applied on the films which caused changes in their chemical composition and nanostructure. These changes were observed to manifest in the refractive indices and densities of the films. The AlN films were identified to contain light element impurities, namely, H, C, and excess N due to nonideal precursor reactions. Oxygen contamination was also identified in the films. Many of the embedded impurities became volatile in the elevated annealing temperatures. Most notably, high amounts of H were observed to desorb from the…

Materials scienceNanostructureAnnealing (metallurgy)ta221Analytical chemistry02 engineering and technologyNitride01 natural sciencesimpuritiesAtomic layer depositionImpurity0103 physical sciences010302 applied physicsta213Wide-bandgap semiconductorSurfaces and Interfacesatomikerroskasvatus021001 nanoscience & nanotechnologyCondensed Matter PhysicsSurfaces Coatings and FilmsAmorphous solidCarbon filmatomic layer depositionaluminum nitride films0210 nano-technologyepäpuhtaudetJournal of Vacuum Science and Technology A
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Effect of reactive ion beam etching on the photoluminescence of CdTe epitaxial layers

2008

http://link.aip.org/link/?JAPIAU/103/056108/1

Materials sciencePhotoluminescenceSapphireSpectral line intensityCadmium compoundsIon platingAnalytical chemistryUNESCO::FÍSICASemiconductor epitaxial layersGeneral Physics and AstronomyII-VI semiconductorsEpitaxyAcceptorVapour phase epitaxial growthEtchingEtching (microfabrication):FÍSICA [UNESCO]Ion beam assisted depositionMOCVDSapphireCadmium compounds ; Etching ; II-VI semiconductors ; Impurities ; Ion beam assisted deposition ; MOCVD ; Photoluminescence ; Sapphire ; Semiconductor epitaxial layers ; Spectral line intensity ; Vapour phase epitaxial growthMetalorganic vapour phase epitaxyIon beam-assisted depositionPhotoluminescenceImpurities
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