Search results for "insulator"

2021

The bosonic analogs of topological insulators have been proposed in numerous theoretical works, but their experimental realization is still very rare, especially for spin systems. Recently, two-dim...

SPATIAL MULTIFRACTALITY OF ELECTRONIC STATES AND THE METAL-INSULATOR TRANSITION IN DISORDERED SYSTEMS

1993

For the investigation of the spatial behavior of electronic wave functions in disordered systems, we employ the Anderson model of localization. The eigenstates of the corresponding Hamiltonian are calculated numerically by means of the Lanczos algorithm and are analyzed with respect to their spatial multifractal properties. We find that the wave functions show spatial multifractality for all parameter cases not too far away from the metal-insulator transition (MIT) which separates localized from extended states in this model. Exactly at the MIT, multifractality is expected to exist on all length scales larger than the lattice spacing. It is found that the corresponding singularity spectrum…

Quantum Monte Carlo study of insulating state in NaV2O5

2003

Abstract Quantum Monte Carlo (QMC) methods are being increasingly used as complements to Hartree–Fock (HF) methods for computing the electronic structure of molecules and materials. We investigate the nature of the insulating state driven by electronic correlations in the ladder compound NaV 2 O 5 ; considered as a quarter-filled system. We use an extended Hubbard model (EHM) to study the role of on-site and inter-site Coulomb interaction. It is found that the insulating state in the charge-disordered phase of this compound take origin from the transfer of spectral density and dynamical fluctuations. Our calculation allows us also, to understand the origin of the insulating states above T C…

Coupling evanescently low loss Silicon-on-insulator ridge waveguides including high Q nanocavities for light control

2011

Summary form only given. In this work, we propose an innovative way to achieve an air-slotted nanocavities by coupling evanescently low loss Silicon-on-insulator (SOI) ridge waveguides(WGs) including high Q nanocavities exhibiting an ultrasmall modal volume V. We first show that coupling two WGs allows us to achieve a field confinement within the air slot as low as lambda/30 while preserving a high group index of the guided modes. Then we demonstrate that merging such coupled WGs with state-of-the-art high-Q/small V nanocavities is a robust way to achieve a single compact (1 µm × 3 µm) air-slotted resonator on substrate. Finally, we extend the concept to multiple air-slotted resonator syste…

Tracks induced in TeO2 by heavy ions at low velocities

2000

On the basis of its thermal properties, TeO2 crystal was selected as an insulator with low threshold electronic stopping power for track formation Set. The crystals were irradiated by S, Zn, Mo, Kr, Te and Pb ions and the optical absorption and track formation were studied. Comparison is made with the published results on LiNbO3 ,Y 3Fe5O12 and SiO2 quartz. Good quantitative agreement is found with the predictions of the thermal spike model of Szenes with respect to Set and the variation of the track size with the electronic stopping power Se. It is shown that TeO2 has a high eAciency g at low ion velocities, which is a characteristic feature of the damage cross-section velocity eAect. ” 200…

First demonstration of active plasmonic device in true data traffic conditions: On/off thermo-optic modulation using a hybrid silicon-plasmonic asymm…

2012

We demonstrate the first system-level evaluation of an active plasmonic device in 10Gb/s data traffic conditions. Thermo-optic ON/OFF modulation with 3μs response time and 10mW power consumption is presented using an asymmetric MZI silicon-plasmonic gate.

Structural and electrical study of the topological insulator SnBi2Te4 at high pressures

2016

We report high-pressure X-ray diffraction and electrical measurements of the topological insulator SnBi2Te4 at room temperature. The pressure dependence of the structural properties of the most stable phase of SnBi2Te4 at ambient conditions (trigonal phase) have been experimentally determined and compared with results of our ab initio calculations. Furthermore, a comparison of SnBi2Te4 with the parent compound Bi2Te3 shows that the central TeSnTe trilayer, which substitutes the Te layer at the center of the TeBiTeBiTe layers of Bi2Te3, plays a minor role in the compression of SnBi2Te4. Similar to Bi2Te3, our resistance measurements and electronic band structure simulations in SnBi2Te4 at hi…

Sub-wavelength imaging of light confinement and propagation in SOI based photonic crystal devices

2006

A light source is coupled into photonic crystal devices and a near field optical probe is used to observe the electromagnetic field propagation and distribution at a sub-wavelength scale. Bloch modes are clearly observed.

Impact of electromagnetic fields and heat on spin transport signals in Y3Fe5O12

2019

Exploring new strategies to perform magnon logic is a key requirement for the further development of magnon-based spintronics. In this paper, we realize a three-terminal magnon transport device to study the possibility of manipulating magnonic spin information transfer in a magnetic insulator via localized magnetic fields and heat generation. The device comprises two parallel Pt wires as well as a Cu center wire that are deposited on the ferrimagnetic insulator ${\mathrm{Y}}_{3}{\mathrm{Fe}}_{5}{\mathrm{O}}_{12}$. While the Pt wires act as spin current injector and detector, the Cu wire is used to create local magnetostatic fields and additional heat, which impact both the magnetic configur…

Trapping of three-dimensional electrons and transition to two-dimensional transport in the three-dimensional topological insulator Bi2Se3under high p…

2012

This paper reports an experimental and theoretical investigation on the electronic structure of bismuth selenide (Bi2Se3) up to 9 GPa. The optical gap of Bi2Se3 increases from 0.17 eV at ambient pressure to 0.45 eV at 8 GPa. The quenching of the Burstein-Moss effect in degenerate samples and the shift of the free-carrier plasma frequency to lower energies reveal a quick decrease of the bulk three-dimensional (3D) electron concentration under pressure. On increasing pressure the behavior of Hall electron concentration and mobility depends on the sample thickness, consistently with a gradual transition from mainly 3D transport at ambient pressure to mainly two-dimensional (2D) transport at hi…