6533b854fe1ef96bd12ae0ad
RESEARCH PRODUCT
Structural and electrical study of the topological insulator SnBi2Te4 at high pressures
Rosario VilaplanaFrancisco Javier ManjónJuan Angel SansOscar GomisOliver OecklerAlfonso MuñozCatalin PopescuA. L. J. PereiraB. García-domeneAdrián Andrada-chacónPlácida Rodríguez-hernándezDominik DaisenbergerJavier Sánchez-benítezsubject
DiffractionElectronic topological transitionMaterials science02 engineering and technology01 natural sciencesAb initio quantum chemistry methodsPhase (matter)0103 physical sciencesMaterials ChemistryElectrical measurementsTopological insulators010306 general physicsElectronic band structureCondensed matter physicsMechanical EngineeringMetals and Alloys021001 nanoscience & nanotechnologyX-ray diffractionHigh pressureMechanics of MaterialsHigh pressureTopological insulatorFISICA APLICADAX-ray crystallographyTransport properties0210 nano-technologydescription
We report high-pressure X-ray diffraction and electrical measurements of the topological insulator SnBi2Te4 at room temperature. The pressure dependence of the structural properties of the most stable phase of SnBi2Te4 at ambient conditions (trigonal phase) have been experimentally determined and compared with results of our ab initio calculations. Furthermore, a comparison of SnBi2Te4 with the parent compound Bi2Te3 shows that the central TeSnTe trilayer, which substitutes the Te layer at the center of the TeBiTeBiTe layers of Bi2Te3, plays a minor role in the compression of SnBi2Te4. Similar to Bi2Te3, our resistance measurements and electronic band structure simulations in SnBi2Te4 at high pressure suggest that this compound exhibits a pressure-induced electronic topological transition or Lifshitz transition between 3.5 and 5.0 GPa. (C) 2016 Published by Elsevier B.V.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2016-11-15 |