Search results for "integrated circuit"
showing 10 items of 130 documents
Design of MOS Current Mode Logic Gates – Computing the Limits of Voltage Swing and Bias Current
2005
Minimizing a quality metric for an MCML gate, such as power-delay product or energy-delay product, requires solving a system of nonlinear equations subject to constraints on both bias current and voltage swing. In this paper, we will show that the limits of the swing and the bias current are affected by the constraints on maximum area and maximum delay. Moreover, methods for computing such limits are presented.
Complex quantum state generation and coherent control based on integrated frequency combs
2019
The investigation of integrated frequency comb sources characterized by equidistant spectral modes was initially driven by considerations towards classical applications, seeking a more practical and miniaturized way to generate stable broadband sources of light. Recently, in the context of scaling the complexity of optical quantum circuits, these on-chip approaches have provided a new framework to address the challenges associated with non-classical state generation and manipulation. For example, multi-photon and high-dimensional states were to date either inaccessible, lacked scalability, or were difficult to manipulate, requiring elaborate approaches. The emerging field of quantum frequen…
Selective modification of the band gaps of GaInNas/GaAs structures by quantum well intermixing techniques
2003
We report the unambiguous demonstration of controlled quantum well intermixing (QWI) in the technologically important GaInNAs/ GaAs 1.3 mum material system. QWI is a key technique to selectively modify the band gap of quantum wells, which has found broad application in semiconductor lasers and photonic integrated circuits (PICs). Extending such technology to GaInNAs/GaAs structures is highly desirable due to the technologically advantageous properties of this material system. Here, we investigate well-characterized GaInNAs quantum well material which has been annealed "to saturation" before QWI processing to allow unambiguous interpretation of results. After RTA at 700 degreesC for similar …
SPICE model for resistive gas and odour sensors
1999
A generalised PSPICE model of resistive gas/odour sensors is presented. The model simulates the response of both polymeric and metal oxide devices, as well as an integrated resistive heater that is used to set the operating temperature. In both cases there was good agreement between the observed responses and the PSPICE simulated responses to rectangular pulses of gases. The PSPICE model is not only simpler and faster to use than analytical solutions, but also should permit the rapid prototyping of associated drive circuitry.
Modelling glow curves of thermoluminescent radiometric devices
2017
Thermoluminescent (TLD) radiation dosimeters enjoy wide usage due to low cost and simplicity of use. They however require complex device modelling in order to extract the measured dose. A new glow peak model and fit method are presented, that offer a more robust fit to the glow-curves and allows operators to enter visually inspectable parameters (rather than physical quantities difficult to estimate from the visual inspection of the glow curves themselves). Fits performed on the GLOCANIN-challenge's RefGlow-002 and RefGlow-009 [2] are presented, highlighting the good performance of the GEMINI C++ code written.
Asymptotic behaviour of mixed-type circuits. Delay time predicting
1991
In the preceding chapter we have shown that the delay time problem in integrated circuits leads us to consider mixed-type circuits with distributed elements described by Telegraph Equations and lumped resistive and capacitive elements (Figure 4.5). Moreover, the well-posedness of the mathematical model (P(B, V0)) = (E) + (BC) + (IC) has been studied, various conditions for the existence, uniqueness and L2stability of different kind of solutions being formulated.
A Design Methodology for Low-Power MCML Ring Oscillators
2007
In this paper, a low-power design method for MCML based ring oscillators is presented. The proposed method takes into account the parasitic capacitances of the MOS transistors. To validate it, some ring oscillators with different oscillation frequencies were designed in a 0.18 mum CMOS technology. SPICE simulations demonstrate the effectiveness of the design method.
Towards Si-based photonic circuits: Integrating photonic crystals in silicon-on-insulator platforms
2007
In the context of Si-based photonics, we report on a strategy to integrate two optical components, a 3D photonic crystal light emitter and a waveguide, in a silicon-on-insulator patterned substrate. Self-assembled colloidal photonic crystals are produced with high crystalline quality and spatial selectivity. Plane wave expansion and finite-difference time-domain have been used to find suitable configurations for positioning emitters and waveguides. The first steps toward the realisation of these configurations are presented.
Timing performance of the silicon PET insert probe
2010
Simulation indicates that PET image could be improved by upgrading a conventional ring with a probe placed close to the imaged object. In this paper, timing issues related to a PET probe using high-resistivity silicon as a detector material are addressed. The final probe will consist of several (four to eight) 1-mm thick layers of silicon detectors, segmented into 1 x 1 mm(2) pads, each pad equivalent to an independent p + nn+ diode. A proper matching of events in silicon with events of the external ring can be achieved with a good timing resolution. To estimate the timing performance, measurements were performed on a simplified model probe, consisting of a single 1-mm thick detector with 2…
High accuracy Raman measurements using the Stokes and anti-Stokes lines
1997
We show that by measuring the separation between the Stokes and anti-Stokes peaks excited by two different laser lines we obtain a very precise determination of absolute phonon energies. The method is useful for measuring small changes of these energies with strain, temperature, laser power, etc. It doubles the changes and avoids the necessity of using the reference lines in the Raman spectra. The method can be applied for the determination of phonon deformation potentials, for the characterization of strained heteroepitaxial layers, and for micro-Raman analysis of strain in silicon integrated circuits. We give examples of phonon shifts in Si, Ge, GaAs, InAs, and GaP as a function of applie…