Search results for "iu"
showing 10 items of 38021 documents
Modelling of thermal field and point defect dynamics during silicon single crystal growth using CZ technique
2018
Abstract Silicon single crystal growth by the Czochralski (CZ) technique is studied numerically using non-stationary mathematical models which allow to predict the evolution of the CZ system in time, including Dash neck, cone and cylindrical growth stages. The focus is on the point defect dynamics, also considering the effect of the thermal stresses. During the cylindrical stage, the crystal pull rate is temporarily reduced as in experiments by Abe et al. The crystal radius and heater power change is explicitly considered in the calculations for crystal diameters of 50, 100 and 200 mm and the agreement with experiments is discussed.
Partial discharge of gel insulated high voltage power modules subjected to unconventional voltage waveforms
2016
Performances and duration of the new generation of high voltage power electronic components are dependent on dielectric materials aim to insulating their internal terminals. The presence of defects, some due to faults generated during the manufacturing process, but also due to the internal design of layers and connections, can cause local enhancements of electric field and consequently possible activity of partial discharges phenomena or other effects (aging, tracking) that may result in reduction of device reliability. Furthermore, the usage of unconventional voltage waveforms, like square waves or pulse width modulated waves, additionally increases the electrical aging of the insulation s…
Emerging blue-UV luminescence in cerium doped YAG nanocrystals
2016
Physica status solidi / Rapid research letters 10(6), 475 - 479(2016). doi:10.1002/pssr.201600041
Current Spreading Length and Injection Efficiency in ZnO/GaN-Based Light-Emitting Diodes
2019
We report on carrier injection features in light-emitting diodes (LEDs) based on nonintentionally doped-ZnO/p-GaN heterostructures. These LEDs consist of a ZnO layer grown by chemical-bath deposition (CBD) onto a p-GaN template without using any seed layer. The ZnO layer (~1- $\mu \text{m}$ thickness) consists of a dense collection of partially coalesced ZnO nanorods, organized in wurtzite phase with marked vertical orientation, whose density depends on the concentration of the solution during the CBD process. Due to the limited conductivity of the p-GaN layer, the recombination in the n-region is strongly dependent on the spreading length of the holes, ${L}_{h}$ , coming from the p-contact…
Crystalline phase detection in glass ceramics by EPR spectroscopy
2018
The advances of EPR spectroscopy for the detection of activators as well as determining their local structure in the crystalline phase of glass ceramics is considered. The feasibility of d-element (Mn2+, Cu2+) and f-element (Gd3+, Eu2+) ion probes for the investigation of glass ceramics is discussed. In the case of Mn2+, the information is obtained from the EPR spectrum superhyperfine structure, for Gd3+ and Eu2+ probes – from the EPR spectrum fine structure, whereas for Cu2+ ions the changes in the EPR spectrum shape could be useful. The examples of EPR spectra of the above-mentioned probes in oxyfluoride glass ceramics are illustrated. ----/ / /---- This is the preprint version of the fol…
Atomic Layer Deposition of Osmium
2011
Growth of osmium thin films and nanoparticles by atomic layer deposition is described. The Os thin films were successfully grown between 325 and 375 °C using osmocene and molecular oxygen as precursors. The films consisted of only Os metal as osmium oxides were not detected in X-ray diffraction measurements. Also the impurity contents of oxygen, carbon, and hydrogen were less than 1 at % each at all deposition temperatures. The long nucleation delay of the Os process facilitates either Os nanoparticle or thin film deposition. However, after the nucleation delay of about 350 cycles the film growth proceeded linearly with increasing number of deposition cycles. Also conformal growth of Os thi…
Atomic Layer Deposition of LiF Thin Films from Lithd, Mg(thd)2, and TiF4 Precursors
2013
Lithium fluoride is an interesting material because of its low refractive index and large band gap. Previously LiF thin films have been deposited mostly by physical methods. In this study a new way of depositing thin films of LiF using atomic layer deposition (ALD) is presented. Mg(thd)2, TiF4 and Lithd were used as precursors, and they produced crystalline LiF at a temperature range of 300–350 °C. The films were studied by UV–vis spectrometry, field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), atomic force microscopy (AFM), time-of-flight elastic recoil detection analysis (ToF-ERDA), and energy dispersive X-ray spectroscopy (EDX). In addition, film adhesion was t…
Quasi-static behaviour and damage assessment of flax/epoxy composites
2015
Experimental investigations were conducted on flax and E-glass fibres reinforced epoxy matrix composites subjected to quasi-static loadings. Flax/epoxy samples having [0]12, [90]12, [0/90]3S and [±45]3S stacking sequences, with a fibre volume fraction of 43% have been tested under tension, compression and in-plane shear loadings. Overall, the compression strength of glass/epoxy was 76% greater than for the flax/epoxy composite. The damage evolution of flax/epoxy of [0/90]3S and [±45]3S samples has been evaluated in terms of transverse crack densities with respect to the load increment. The crack density exhibited a classical “S” shaped pattern for [0/90]3S and linearly for [±45]3S specimens…
Deep insight into electron transport and photovoltaic parameters in DSSCs
2019
Dye-sensitized solar cells (DSSCs) based on titanium (IV) oxide (TiO2) nanoparticles and nanotubes (NTs) with different weight ratios and phase compositions were fabricated. The obtained nanostructures were investigated using X-ray powder diffraction, scanning electron microscopy, transmission electron microscopy and ultraviolet–visible spectroscopy. Current–voltage measurements and electrochemical impedance spectroscopy were used to investigate the electron transport and photovoltaic performance of DSSCs. An increase of 14% in cell efficiency was achieved by introducing 10 wt% NTs. In this configuration, high dye loading is ensured and substantial improvement in electron transport efficie…
Annealing behaviour of aluminium-implanted InP
2000
The annealing behaviour of aluminium has been studied in single-crystal InP implanted with 40 and 120 keV 27Al+ ions. The implantation doses were 1 x 1015 and 1 x 1016 cm-2. The aluminium concentration profiles were determined by two techniques, Secondary ion mass spectrometry (SIMS) and the nuclear resonance broadening technique (NRB) which was used for checking purposes. The usability of the SIMS technique for profiling Al rich layers was studied. Significant inconsistencies were observed in the SIMS profiles with the high dose implanted samples. The 120 keV, 1 x 1016 cm-2 implanted samples were subject to annealing in argon atmosphere in the temperature range 380–600°C. Redistribution an…