Search results for "n-"
showing 10 items of 27346 documents
Laser Ultrasonics Inspection for Defect Evaluation on Train Wheel
2019
Abstract Passengers’ safety and in-service life of wheelset axles play an important role in railway vehicles. For this reason, periodic inspections are necessary. Among non-destructive techniques, ultrasonic ones are widely applied in this field. The main disadvantage of conventional ultrasonic techniques is that the overall inspection of wheels requires the train to be put out-of-service and disassembly each part, which is time-consuming and expensive. In this paper, a non-conventional non-contact laser ultrasonic inspection for train wheels is proposed. The proposed method uses a laser interferometer to receive the ultrasonic wave without contact. The receiving system allows choosing the …
Tetragonal Heusler Compounds for Spintronics
2013
With respect to the requirements of spin torque transfer (STT) materials, one the most promising materials families are the tunable tetragonal Heusler compounds based on Mn2YZ (Y=Co,Fe,Ni,Rh,...; Z=Al, Ga, Sn). They form the inverse cubic Heusler structure with three distinct magnetic sublattices, which allows a fine tuning of the magnetic properties. Starting with the stoichiometric Mn3Ga compound, we explored the complete phase diagram of Mn3-xYxZ (Y=Co, Fe, Ni and Z=Ga ). All series exhibit thermally stable magnetic properties. As we demonstrate, Mn3-xFexGa series, which are tetragonal over the whole range of compositions, are good as hard magnets, whereas magnetically more weak Mn3-xNix…
Evaluation of Vertical Fatigue Cracks by Means of Flying Laser Thermography
2019
The present paper proposes a new procedure to analyze the temperature field distribution during Flying Laser Spot and Laser Line Thermographic scanning (FLST, FLLT) of metallic components, in order to detect vertical surface cracks. The methodology exploits the changes in the temperature field produced by a vertical crack, acting as a barrier towards heat diffusion, when the laser approaches the defect. A number of small regions of interests (ROIs) is placed nearby and around the laser source. The average temperature from each ROI is then monitored during the laser scanning. Vertical cracks can be detected by analyzing and comparing the temperature fluctuations from each ROI when the laser …
Performance evaluation and stability of silicide-based thermoelectric modules
2020
Abstract Long-term studies on thermoelectric generators based on N-type magnesium silicide (Mg2.01Si0.49Sn0.5Sb0.01) and P-type higher manganese silicide (Mn0.98Mo0.02Si1.73Ge0.02) materials are presented, in the operating temperature range of 200 °C–400 °C. Emphasis is put on the performance and reliability of the current collector configuration, especially on the hot side of the module, and on the thermomechanical stresses that are created during operation and lifetime testing as a result of large temperature gradients experienced across the thermoelectric legs. With silver (Ag) paste as contact material, the long term-stability of the uni-couples was carried out on non-metalized legs and…
How Gettering Affects the Temperature Sensitivity of the Implied Open Circuit Voltage of Multicrystalline Silicon Wafers
2019
The temperature sensitivity of the open circuit voltage of a solar cell is mainly driven by changes in the intrinsic carrier concentration, but also by the temperature dependence of the limiting recombination mechanisms in the cell. This paper investigates the influence of recombination through metallic impurities on the temperature sensitivity of multicrystalline silicon wafers. Spatially resolved temperature dependent analysis is performed to evaluate the temperature sensitivity of wafers from different brick positions before and after being subjected to phosphorus diffusion gettering. Local spatial analysis is performed on intra-grain areas, dislocation clusters and grain boundaries. Lar…
Antiferromagnetic NiO thickness dependent sign of the spin Hall magnetoresistance in γ-Fe 2 O 3 /NiO/Pt epitaxial stacks
2019
We study the spin Hall magnetoresistance (SMR) in epitaxial γ–Fe2O3/NiO(001)/Pt stacks, as a function of temperature and thickness of the antiferromagnetic insulating NiO layer. Upon increasing the thickness of NiO from 0 nm to 10 nm, we detect a sign change of the SMR in the temperature range between 10 K and 280 K. This temperature dependence of the SMR in our stacks is different compared to that of previously studied yttrium iron garnet/NiO/Pt, as we do not find any peak or sign change as a function of temperature. We explain our data by a combination of spin current reflection from both the NiO/Pt and γ-Fe2O3/NiO interfaces and the thickness-dependent exchange coupling mode between the …
Fabrication and characterization of low cost Cu 2 O/ZnO:Al solar cells for sustainable photovoltaics with earth abundant materials
2016
Abstract The low cost electrodeposition method was used to grow Cu2O thin films and experimentally determine the optimal absorber layer thickness. Raman scattering studies indicate the presence of solely crystalline Cu2O and SEM images show that the thin films consist of grains with a pyramidal shape. The influence of the thickness of the light absorbing Cu2O layer on the basic characteristic of the heterojunction and their properties have been investigated using reflectivity, current–voltage (J–V), capacitance–voltage (C–V) and the external quantum efficiency (EQE) measurements. The depletion layer, the charge collection length of the minority carrier, and reflectivity are the main factors…
Reducing the Schottky barrier height at the MoSe2/Mo(110) interface in thin-film solar cells: Insights from first-principles calculations
2016
Abstract We report on first-principles calculations of the properties of the MoSe2/Mo(110) interface. Due to mismatch between the lattice parameters of the two structures, different patterns can form at the interface. We have studied the formation energy and the band alignment of six patterns for the MoSe2 (0001)/Mo(110) interface and one pattern for the MoSe2 (11 2 0)/Mo(110) interface. The MoSe2 (11 2 0)/Mo(110) interface is more stable than the MoSe 2 (0001)/Mo(110) interface and in contrast to MoSe2 (0001)/Mo(110), no Schottky barrier forms at MoSe2 (11 2 0)/Mo(110). Doping with Na modifies the band alignment at the interfaces. The Schottky barrier height decreases, provided that a Na a…
Current Spreading Length and Injection Efficiency in ZnO/GaN-Based Light-Emitting Diodes
2019
We report on carrier injection features in light-emitting diodes (LEDs) based on nonintentionally doped-ZnO/p-GaN heterostructures. These LEDs consist of a ZnO layer grown by chemical-bath deposition (CBD) onto a p-GaN template without using any seed layer. The ZnO layer (~1- $\mu \text{m}$ thickness) consists of a dense collection of partially coalesced ZnO nanorods, organized in wurtzite phase with marked vertical orientation, whose density depends on the concentration of the solution during the CBD process. Due to the limited conductivity of the p-GaN layer, the recombination in the n-region is strongly dependent on the spreading length of the holes, ${L}_{h}$ , coming from the p-contact…
Electrical Modeling of Monolithically Integrated GMR Based Current Sensors
2018
We report on the electrical compact model, using Verilog-A, of a monolithically integrated giant magnetoresistance (GMR) based electrical current sensors. For this purpose, a specifically designed ASIC (AMS $0.35\mu \mathrm{m}$ technology) has been considered, onto which such sensors have been patterned and fabricated, following a two-steps procedure. This work is focused on the DC regime model extraction, giving evidences of its good performance and stating the bases for subsequent model improvements.