Search results for "nanoelectronics"
showing 10 items of 36 documents
Computer Simulation of the Electric Transport Properties of the FeSe Monolayer
2020
The research has been supported by the grant of the Ministry of Education and Science of the Republic of Kazakhstan AP08052562. In addition, the research of AIP has been supported by the Latvian- Ukrainian Grant LV-UA/2018/2.
Localized charge storage in nanocrystal memories: Feasibility of a multi-bit cell
2004
We have realized Si nanocrystal memory cells in which the Si dots have been deposited by chemical vapor deposition (CVD) on the tunnel oxide and then covered by a CVD control oxide. In this paper we report a study on the potential of this type of cells for multi-bit storage. In particular, the possibilities offered by these devices from the point of view of program/erase mechanisms, endurance, and charge retention are shown and discussed.
Chirality-controlled preparation and single molecule characterisation of carbon nanotubes
2011
Nanostructures have gained increasing attention not only for their basic scientific richness, but also because they promise novelties and potentials that may lead to technological revolution. Carbon nanotubes (CNT’s) are one of the primary focuses of nanotechnology because of their unique physical properties such as huge Young modulus, high tensile strength, thermal and electrical conductivity. However many of their physical properties are extremely sensitive to their atomic structure. In order to optimize utilization of CNTs, their fundamental material properties should be well understood. A single shell of a CNT is composed of a wrapped up sheet of graphite. Depending on the wrapping, sin…
Synchronization of coupled single-electron circuits based on nanoparticles and tunneling junctions
2009
We explore theoretically the synchronization properties of a device composed of coupled single-electron circuits whose building blocks are nanoparticles interconnected with tunneling junctions. Elementary nanoscillators can be achieved by a single-electron tunneling cell where the relaxation oscillation is induced by the tunneling. We develop a model to describe the synchronization of the nanoscillators and present sample calculations to demonstrate that the idea is feasible and could readily find applications. Instead of considering a particular system, we analyze the general properties of the device making use of an ideal model that emphasizes the essential characteristics of the concept.…
Normal metal - insulator - superconductor thermometers and coolers with titanium-gold bilayer as the normal metal
2018
We have fabricated superconductor - insulator - normal metal - insulator - superconductor (SINIS) tunnel junctions in which Al acts as the superconductor, AlOx is the insulator, and the normal metal consists of a thin Ti layer (5 nm) covered with a thicker Au layer (40 nm). We have characterized the junctions by measuring their current-voltage curves between 60 mK and 750 mK. For comparison, the same measurements have been performed for a SINIS junction pair whose normal metal is Cu. The Ti-Au bilayer decreases the SINIS tunneling resistance by an order of magnitude compared to junctions where Cu is used as normal metal, made with the same oxidation parameters. The Ti-Au devices are much mo…
Size Dependent Breakdown of Superconductivity in Ultranarrow Nanowires
2005
Below a certain temperature Tc (typically cryogenic), some materials lose their electric resistance R entering a superconducting state. Folowing the general trend toward a large scale integration of a greater number of electronic components, it is desirable to use superconducting elements in order to minimize heat dissipation. It is expected that the basic property of a superconductor, i.e. dissipationless electric current, will be preserved at reduced scales required by modern nanoelectronics. Unfortunately, there are indications that for a certain critical size limit of the order of 10 nm, below which a "superconducting" wire is no longer a superconductor in a sense that it acquires a fin…
High dynamic resistance elements based on a Josephson junction array
2020
A chain of superconductor–insulator–superconductor junctions based on Al–AlOx–Al nanostructures and fabricated using conventional lift-off lithography techniques was measured at ultra-low temperatures. At zero magnetic field, the low current bias dynamic resistance can reach values of ≈1011 Ω. It was demonstrated that the system can provide a decent quality current biasing circuit, enabling the observation of Coulomb blockade and Bloch oscillations in ultra-narrow Ti nanowires associated with the quantum phase-slip effect.
Independent Geometrical Control of Spin and Charge Resistances in Curved Spintronics
2019
Spintronic devices operating with pure spin currents represent a new paradigm in nanoelectronics, with higher energy efficiency and lower dissipation as compared to charge currents. This technology, however, will be viable only if the amount of spin current diffusing in a nanochannel can be tuned on demand while guaranteeing electrical compatibility with other device elements, to which it should be integrated in high-density three-dimensional architectures. Here, we address these two crucial milestones and demonstrate that pure spin currents can effectively propagate in metallic nanochannels with a three-dimensional curved geometry. Remarkably, the geometric design of the nanochannels can b…
Simulation of Fundamental Properties of CNT- and GNR-Metal Interconnects for Development of New Nanosensor Systems
2012
Cluster approach based on the multiple scattering theory formalism, realistic analytical and coherent potentials, as well as effective medium approximation (EMA-CPA), can be effectively used for nano-sized systems modeling. Major attention is paid now to applications of carbon nanotubes (CNTs) and graphene nanoribbons (GNRs) with various morphology which possess unique physical properties in nanoelectronics, e.g., contacts of CNTs or (GNRs) with other conducting elements of a nanocircuit, which can be promising candidates for interconnects in high-speed electronics. The main problems solving for resistance C-Me junctions with metal particles appear due to the influence of chirality effects …
Scattering Processes in Nanocarbon-Based Nanointerconnects
2017
Cluster approach based on the multiple scattering theory (MST) formalism, realistic analytical and coherent potentials as well as effective medium approximation (EMA–CPA) can be effectively used for nanosized systems modelling. Major attention is paid now to applications of carbon nanotubes (CNTs) and graphene nanoribbons (GNRs) with various morphology which possess unique physical properties in nanoelectronics, e.g. contacts of CNTs or GNRs with other conducting elements of a nanocircuit, which can be promising candidates for interconnects in high-speed electronics. The main problems connected with the resistance of C–Me junctions with metal particles appear due to the influence of chirali…