Search results for "ohutkalvo"

showing 10 items of 65 documents

Structural and optical characterization of ZnS ultrathin films prepared by low-temperature ALD from diethylzinc and 1.5-pentanedithiol after various …

2019

The structural and optical evolution of the ZnS thin films prepared by atomic layer deposition (ALD) from the diethylzinc (DEZ) and 1,5-pentanedithiol (PDT) as zinc and sulfur precursors was studied. A deposited ZnS layer (of about 60 nm) is amorphous, with a significant S excess. After annealing, the stoichiometry improved for annealing temperatures &ge

optical propertiesMaterials scienceAnnealing (metallurgy)Analytical chemistryEpitaxylcsh:TechnologyArticleAnnealingAtomic layer depositionatomic layer deposition (ALD)General Materials ScienceThin filmlcsh:Microscopylcsh:QC120-168.85lcsh:QH201-278.5Optical propertieslcsh:TAtmospheric temperature rangeatomikerroskasvatusAmorphous solidAtomic layer deposition (ALD)lcsh:TA1-2040lcsh:Descriptive and experimental mechanicsannealinglcsh:Electrical engineering. Electronics. Nuclear engineeringCrystalliteohutkalvotlcsh:Engineering (General). Civil engineering (General)lcsh:TK1-9971StoichiometryZnS thin films
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Mechanical and optical properties of as-grown and thermally annealed titanium dioxide from titanium tetrachloride and water by atomic layer deposition

2021

Funding Information: This work was carried out within the MECHALD project funded by Business Finland (Tekes) and is linked to the Finnish Centers of Excellence in Atomic Layer Deposition (ref. 251220) and Nuclear and Accelerator Based Physics (refs. 213503 and 251353) of the Academy of Finland. Funding Information: This work was carried out within the MECHALD project funded by Business Finland (Tekes) and is linked to the Finnish Centers of Excellence in Atomic Layer Deposition (ref. 251220 ) and Nuclear and Accelerator Based Physics (refs. 213503 and 251353 ) of the Academy of Finland. Publisher Copyright: © 2021 The use of thin-films made by atomic layer deposition (ALD) is increasing in …

optical propertiesMaterials scienceAnnealing (metallurgy)elastic modulusresidual stress02 engineering and technologyoptiset ominaisuudet01 natural sciencesStress (mechanics)Atomic layer depositionResidual stressTiO0103 physical sciencesMaterials ChemistryTiO2Composite materialThin filmElastic modulus010302 applied physicsMetals and AlloysSurfaces and Interfacesatomikerroskasvatus021001 nanoscience & nanotechnologyhardnessSurfaces Coatings and FilmsElectronic Optical and Magnetic Materialsfysikaaliset ominaisuudetAtomic Layer DepositionALDatomic layer depositionohutkalvot0210 nano-technologytitaanidioksidiRefractive indexLayer (electronics)
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Microscratch testing method for systematic evaluation of the adhesion of atomic layer deposited thin films on silicon

2016

The scratch test method is widely used for adhesion evaluation of thin films and coatings. Usual critical load criteria designed for scratch testing of coatings were not applicable to thin atomic layer deposition (ALD) films on silicon wafers. Thus, the bases for critical load evaluation were established and the critical loads suitable for ALD coating adhesion evaluation on silicon wafers were determined in this paper as LCSi1, LCSi2, LCALD1, and LCALD2, representing the failure points of the silicon substrate and the coating delamination points of the ALD coating. The adhesion performance of the ALD Al2O3, TiO2, TiN, and TaCN+Ru coatings with a thickness range between 20 and 600 nm and dep…

piiMaterials scienceSiliconAnnealing (metallurgy)ta221chemistry.chemical_element02 engineering and technologyengineering.material01 natural sciencesAtomic layer depositionCoatingadheesio0103 physical sciencesWaferThin filmta216computer.programming_language010302 applied physicsta114MetallurgysiliconSurfaces and Interfacesatomikerroskasvatus021001 nanoscience & nanotechnologyCondensed Matter PhysicsSurfaces Coatings and Filmsadhesionthin filmschemistryscratch testScratchatomic layer depositionengineeringohutkalvot0210 nano-technologyTincomputerJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
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Polymorphic chiral squaraine crystallites in textured thin films

2020

Chirality 32(5), 619 - 631 (2020). doi:10.1002/chir.23213

polarized spectro-microscopyCircular dichroism610mikroskopiaCircular dichroism010402 general chemistry01 natural sciencesCatalysisAnalytical ChemistrypuolijohteetDrug DiscoveryTexture (crystalline)ddc:610Thin filmAnisotropyDicroisme circularDifracció de raigs Xorgaaniset yhdisteetSpectroscopyPharmacologyimaging Mueller matrix polarimetry010405 organic chemistryChemistryOrganic ChemistryDavydov splittingX-rays diffraction0104 chemical sciencesX-ray diffractionCrystallographyX-ray crystallographyOrthorhombic crystal systempolarimetriaCrystalliteohutkalvotröntgenkristallografiaMonoclinic crystal system
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Low-temperature thermal and plasma-enhanced atomic layer deposition of metal oxide thin films

2017

Atomic layer deposition (ALD) is a method for thin film fabrication with atomic level precision. This thesis focuses on low-temperature thermal and plasma- enhanced ALD and presents results on thin film growth by these techniques with examples of common ALD materials: Al2O3, ZnO and TiO2. As an example of limitations of the thermal ALD the nucleation and growth of Al2O3 and ZnO films on different grades of poly(methyl methacrylate) (PMMA) are presented, showing that the initiation of the growth is strongly dependent on both the deposited material and the substrate. A potential application of the ALD ZnO films in polymer surface functionalization is demonstrated by changing in the surface wettab…

sinkkioksidiatomic layer depositionzinc oxideplasmatekniikkaatomikerroskasvatusohutkalvotpolymeeritplasma-enhanced atomic layer depositionpolymers
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Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering

2020

The suitability of Ti as a band gap modifier for &alpha

solar-blind detectionlaajakaistaiset puolijohteetalloyingBand gaplcsh:Mechanical engineering and machineryAnalytical chemistryCorundum02 engineering and technologyengineering.material7. Clean energy01 natural sciencesArticlegallium oxideCrystallinityAtomic layer depositionpuolijohteet0103 physical scienceslcsh:TJ1-1570Electrical and Electronic EngineeringThin filmQCgallium010302 applied physicsCondensed Matter - Materials Sciencewide band gap semiconductorsMechanical EngineeringWide-bandgap semiconductorPhysics - Applied Physicsatomikerroskasvatus021001 nanoscience & nanotechnologybandgapAmorphous solidthin filmstitaaniControl and Systems Engineeringatomic layer depositiongalliumoksidiengineeringSapphireohutkalvotddc:6200210 nano-technology
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Optical properties of conductive carbon-based nanomaterials

2016

The interaction of light with carbon nanomaterials is the main focus of this thesis. I explore several nanostructured systems involving different allotropes of carbon, and characterize them both electrically, if applicable, and optically. Special attention is paid to search for plasmon-like excitations on the systems, or utilizing surface plasmons on characterization. The first objective is to achieve control of carbon nanotube (CNT) conductivity with surface plasmon polaritons (SPPs), which resulted in the first CNT field-effect transistor (FET) that can be gated definitively with SPPs. The second objective is the investigation of optical properties of various thin carbon-based molecular n…

spectroscopycarbon nanotubesoptoelectronicshiiligraphenespektroskopiananomateriaalitoptoelektroniikkaoptiset ominaisuudetplasmonicssähkönjohtavuusplasmonitkanavatransistoritnanorakenteettransistoritgrafeeninanoputketohutkalvotpolymeeritconductive polymers
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Tuning of Emission Wavelength of CaS:Eu by Addition of Oxygen Using Atomic Layer Deposition

2021

| openaire: EC/H2020/820423/EU//S2QUIP | openaire: EC/H2020/834742/EU//ATOP | openaire: EC/H2020/965124/EU//FEMTOCHIP Atomic layer deposition (ALD) technology has unlocked new ways of manipulating the growth of inorganic materials. The fine control at the atomic level allowed by ALD technology creates the perfect conditions for the inclusion of new cationic or anionic elements of the already-known materials. Consequently, novel material characteristics may arise with new functions for applications. This is especially relevant for inorganic luminescent materials where slight changes in the vicinity of the luminescent centers may originate new emission properties. Here, we studied the lumines…

sulfiditkalsiumTechnologyMicroscopyQC120-168.85Eu [CaS]TQH201-278.5CaS:Eu; phosphor; photoluminescence; atomic layer depositionatomikerroskasvatusharvinaiset maametallitEngineering (General). Civil engineering (General)ArticlephosphorTK1-9971Descriptive and experimental mechanicsatomic layer depositionCaS:EuphotoluminescenceElectrical engineering. Electronics. Nuclear engineeringohutkalvotTA1-2040fotoluminesenssifosforiMaterials
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Coupling the Higgs mode and ferromagnetic resonance in spin-split superconductors with Rashba spin-orbit coupling

2022

We show that the Higgs mode of superconductors can couple with spin dynamics in the presence of a static spin-splitting field and Rashba spin-orbit coupling. The Higgs-spin coupling dramatically modifies the spin susceptibility near the superconducting critical temperature and consequently enhances the spin pumping effect in a ferromagnetic insulator/superconductor bilayer system. We show that this effect can be detected by measuring the magnon transmission rate and the magnon-induced voltage generated by the inverse spin Hall effect.

suprajohtavuusCondensed Matter - Mesoscale and Nanoscale PhysicsCondensed Matter - SuperconductivityFOS: Physical sciencesCondensed Matter::Mesoscopic Systems and Quantum Hall Effect114 Physical sciencessuprajohteetSuperconductivity (cond-mat.supr-con)spin (kvanttimekaniikka)Condensed Matter::SuperconductivityMesoscale and Nanoscale Physics (cond-mat.mes-hall)Condensed Matter::Strongly Correlated ElectronsohutkalvotmagnetismiPhysical Review B
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Thin film conductivity measurements of carbon nanotube hemicellulose complex

2014

Työssä mitattiin hiilinanoputkista ja hemiselluloosasta koostuvan läpinäkyvän ohutkalvon sähkönjohtavuutta. Materiaali on Nemcel Oy:n kehittämä. Valmistimme useita näytteitä erilaisia mittauksia varten ja testataksemme eri valmistusmenetelmiä. Valmistetun ohutkalvon merkittävimmät ominaisuudet ovat läpinäkyvyys ja hyvä sähkönjohtavuus. Valmistetut kalvot olivat pääasiassa läpinäkyviä, mikä edellytti kalvon ohuutta. Itse materiaali toimitettiin vesiliuoksena, jossa oli 1:1 hiilinanoputkia ja hemiselluloosaa. Kalvot valmistettiin joko spinnaamalla tai kuivattamalla yksittäisiä pisaroita pinnalle. Näytteet valmistettiin pintaoksidioidulle piille, johon oli tehty kultaelektrodit. Kalvoa kuvatti…

thin filmselluloosahemicelluloseconductivitycarbon nanotubenanoputketohutkalvotxylancellulosesähkönjohtavuus
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