Search results for "optoelectronic"
showing 10 items of 2328 documents
Temperature Dependent Quantum Efficiencies in Multicrystalline Silicon Solar Cells
2015
Abstract Several field studies comparing modules based on Elkem Solar Silicon ® (ESS ® ) cells with reference modules based on non-compensated virgin polysilicon show that the compensated ESS ® modules outperform the reference modules with comparable installed capacity under certain operating conditions. At high temperatures and high irradiation conditions the modules based on compensated silicon produce more energy than the reference modules. In order to increase the understanding of the observed effect cells are studied at different temperatures by the means of IV-characteristics as well as quantum efficiencies. Quantum efficiency measurements show that the main difference between ESS ® c…
Si Donor Incorporation in GaN Nanowires
2015
With increasing interest in GaN based devices, the control and evaluation of doping are becoming more and more important. We have studied the structural and electrical properties of a series of Si-doped GaN nanowires (NWs) grown by molecular beam epitaxy (MBE) with a typical dimension of 2-3 μm in length and 20-200 nm in radius. In particular, high resolution energy dispersive X-ray spectroscopy (EDX) has illustrated a higher Si incorporation in NWs than that in two-dimensional (2D) layers and Si segregation at the edge of the NW with the highest doping. Moreover, direct transport measurements on single NWs have shown a controlled doping with resistivity from 10(2) to 10(-3) Ω·cm, and a car…
Acoustic manipulation of electron-hole pairs in GaAs at room temperature
2004
We demonstrate the optically detected long-range (>100 μm) ambipolar transport of photogenerated electrons and holes at room temperature by surface acoustic waves (SAWs) in (In,Ga)As-based quantum well structures coupled to an optical microcavity. We also show the control of the propagation direction of the carriers by a switch composed of orthogonal SAW beams, which can be used as a basic control gate for information processing based on ambipolar transport.
Surface Coatings Based on Polysilsesquioxanes: Solution-Processible Smooth Hole-Injection Layers for Optoelectronic Applications
2009
Optoelectronic devices usually consist of a transparent conductive oxide (TCO) as one electrode. Interfacial engineering between the TCO electrode and the overlying organic layers is an important method for tuning device performance. We introduce poly(methylsilsesquioxane)-poly(N,N-di-4-methylphenylamino styrene) (PMSSQ-PTPA) as a potential hole-injection layer forming material. Spin-coating and thermally induced crosslinking resulted in an effective planarization of the anode interface. HOMO level (-5.6 eV) and hole mobility (1 × 10(-6) cm(2) · Vs(-1) ) of the film on ITO substrates were measured by cyclovoltammetry and time-of-flight measurement demonstrating the hole injection capabili…
From monolayer to multilayer N-channel polymeric field-effect transistors with precise conformational order
2012
Monolayer field-effect transistors based on a high-mobility n-type polymer are demonstrated. The accurate control of the long-range order by Langmuir-Schafer (LS) deposition yields dense polymer packing exhibiting good injection properties, relevant current on/off ratio and carrier mobility in a staggered configuration. Layer-by-layer LS film transistors of increasing thickness are fabricated and their performance compared to those of spin-coated films.
Tunable field effect properties in solid state and flexible graphene electronics on composite high – low k dielectric
2016
We demonstrate tunable field effect properties in solid state and flexible graphene field effect devices (FEDs) fabricated using a poly(methylmethacrylate) (PMMA) and lithium fluoride (LiF) composite dielectric. Increasing the concentration of LiF in the composite dielectric increases the capacitance, which thereby reduces the operating gate voltages of FEDs significantly from 10 V to 1 V to achieve similar conductivity. Electron and hole mobility of 350 and 310 cm2/V at VD = −5 V are obtained for graphene FEDs with 10% LiF concentration in the composite. Composite dielectric also enabled excellent FEDs on flexible substrates without any significant change in mobility and resistance. Flexib…
Two-Step Solution-Processed Two-Component Bilayer Phthalocyaninato Copper-Based Heterojunctions with Interesting Ambipolar Organic Transiting and Eth…
2016
International audience; The two-component phthalocyaninato copper-based heterojunctions fabricated from n-type CuPc(COOC8H17)(8) and p-type CuPc(OC8H17)(8) by a facile two-step solution-processing quasi-Langmuir-Shafer method with both n/p- and p/n-bilayer structures are revealed to exhibit typical ambipolar air-stable organic thin-film transistor (OTFT) performance. The p/n-bilayer devices constructed by depositing CuPc(COOC8H17)(8) film on CuPc(OC8H17)(8) sub-layer show superior OTFT performance with hole and electron mobility of 0.11 and 0.02 cm(2) V-1 s(-1), respectively, over the ones with n/p-bilayer heterojunction structure with the hole and electron mobility of 0.03 and 0.016 cm(2) …
Luminescence and electron transport properties of GaN and AlN layers
2001
Abstract The transport properties of free charge carriers, photo- and cathodo-luminescence (CV) in GaN and AlN films obtained by MOCVD technique on sapphire and Si substrates, are investigated. The concentration of free charge carriers in GaN is of order 10 17 – 10 19 cm −3 whereas AlN thin films are insulating. The Hall mobility of electrons are 80– 140 cm 2 / V s ). In undoped GaN films the spectral composition of CL is close to photoluminescence (PL) when excited in the region of band–band transitions. The decay time constant of the 3.44 eV UV emission attributed to the bound exciton is considerably less than 1 ns , whereas the 3.26 eV violet (VI) band shows a slow hyperbolical decay ove…
Ultra-fast direct growth of metallic micro- and nano-structures by focused ion beam irradiation
2019
An ultra-fast method to directly grow metallic micro- and nano-structures is introduced. It relies on a Focused Ion Beam (FIB) and a condensed layer of suitable precursor material formed on the substrate under cryogenic conditions. The technique implies cooling the substrate below the condensation temperature of the gaseous precursor material, subsequently irradiating with ions according to the wanted pattern, and posteriorly heating the substrate above the condensation temperature. Here, using W(CO)6 as the precursor material, a Ga+ FIB, and a substrate temperature of -100 °C, W-C metallic layers and nanowires with resolution down to 38 nm have been grown by Cryogenic Focused Ion Beam Indu…