Search results for "optoelectronic"

showing 10 items of 2328 documents

Direct imaging of high frequency multimode spin wave propagation in cobalt iron waveguides using X ray microscopy beyond 10 GHz

2020

MagnonicsMulti-mode optical fiberMaterials sciencebusiness.industryMagnetismX-raychemistry.chemical_elementLarge scale facilities for research with photons neutrons and ionsCondensed Matter PhysicschemistrySpin waveMicroscopyOptoelectronicsGeneral Materials SciencebusinessNanoscopic scaleCobalt
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Fabrication and characterization of tuned Gaussian mirrors for the visible and the near infrared

1988

A thin-film technique has been developed for vacuum fabrication of mirrors with Gaussian reflectivity profiles. Samples with diameters from 2 to 8 mm and assigned maximum reflectivities for visible or near-IR wavelengths have been made and their optical properties evaluated. By properly choosing both the geometry of the evaporation source and the masking system, one can obtain quasi-Gaussian or super-Gaussian reflectivity profiles.

Masking (art)Materials scienceFabricationbusiness.industryGaussianNear-infrared spectroscopyEvaporation (deposition)Atomic and Molecular Physics and Opticssymbols.namesakeWavelengthOpticssymbolsOptoelectronicsbusinessRefractive indexVisible spectrumOptics Letters
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Photoinduced mass transport in amorphous As‐S‐Se films

2012

Direct surface patterning due to photoinduced mass transport in amorphous As-S-Se films has been studied. Illumination of the films with two orthogonally (±45°) polarized beam interference pattern causes the formation of surface relief gratings on the films due to lateral mass transport regarding to light propagation direction. The obtained experimental results showed the dependence of photoinduced surface relief depth (Δh) on film thickness during holographic recording from film side as well as from glass substrate side. After constant exposure doses for the films with a thickness d 1 μm values of Δh do not depend significantly on the film thickness for recording from film side but decreas…

Mass transportMaterials scienceSurface reliefbusiness.industryLateral massSubstrate (electronics)Condensed Matter PhysicsAmorphous solidOpticsOptoelectronicsbusinessSurface relief gratingHolographic recordingBeam (structure)physica status solidi c
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Photoinduced mass transfer in amorphous As 2 S 3 films

2011

The surface relief grating formation in amorphous As2S3 films strongly depends on the polarization state of recording beams. The surface relief grating formation efficiency of s-s and p-p recording beam combination can be essentially enhanced by additional illumination with orthogonal polarization. It is shown that the direction of mass transport on the film surface is determined by the direction of light electric vector (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Mass transportMaterials sciencebusiness.industryOrthogonal polarization spectral imagingCondensed Matter PhysicsPolarization (waves)Amorphous solidOpticsMass transferOptoelectronicsbusinessSurface relief gratingBeam (structure)Electric vectorphysica status solidi c
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The Amorphous Semiconductor Schottky Barrier Approach to Study the Electronic Properties of Anodic Films on Ti

2017

A detailed study of the electronic properties of thin (>20 nm) anodic TiO2 potentiostatically grown on titanium in two different solutions is presented. The results show that the nature of the anodizing solution affects the electronic properties of the anodic film and, more specifically, the density of electronic states (DOS) distribution. Different DOS were derived from the experimental data analyzed according to the theory of amorphous semiconductor (a-SC) Schottky barrier. It is shown that the usual non-linear and frequency dependent Mott-Schottky plots are in agreement with expected theoretical behavior of a-SC Schottky barrier.

Materials Chemistry2506 Metals and AlloysAmorphous semiconductorsMaterials scienceRenewable Energy Sustainability and the Environmentbusiness.industryElectronic Optical and Magnetic MaterialSchottky barrierSurfaces Coatings and Film02 engineering and technology010402 general chemistry021001 nanoscience & nanotechnologyCondensed Matter PhysicsMetal–semiconductor junction01 natural sciences0104 chemical sciencesSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsAnodeSettore ING-IND/23 - Chimica Fisica ApplicataMaterials ChemistryElectrochemistryOptoelectronics0210 nano-technologybusinessElectronic propertiesJournal of The Electrochemical Society
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Low-temperature growth of n ++-GaN by metalorganic chemical vapor deposition to achieve low-resistivity tunnel junctions on blue light emitting diodes

2018

We report on low-resistivity GaN tunnel junctions (TJ) on blue light-emitting diodes (LEDs). Si-doped n ++-GaN layers are grown by metalorganic chemical vapor deposition directly on LED epiwafers. Low growth temperature (<800 °C) was used to hinder Mg-passivation by hydrogen in the p ++-GaN top surface. This allows achieving low-resistivity TJs without the need for post-growth Mg activation. TJs are further improved by inserting a 5 nm thick In0.15Ga0.85N interlayer (IL) within the GaN TJ thanks to piezoelectric polarization induced band bending. Eventually, the impact of InGaN IL on the internal quantum efficiency of blue LEDs is discussed.

Materials Chemistry2506 Metals and AlloysMaterials scienceHydrogenchemistry.chemical_element02 engineering and technologyChemical vapor depositionCondensed Matter Physic01 natural sciencesSettore ING-INF/01 - Elettronicalaw.inventionElectrical resistivity and conductivitylaw0103 physical sciencesMaterials ChemistryElectrical and Electronic EngineeringBlue lightDiode010302 applied physicsmetalorganic chemical vapor depositionbusiness.industryElectronic Optical and Magnetic Material021001 nanoscience & nanotechnologyCondensed Matter Physicsblue light-emitting diodeElectronic Optical and Magnetic MaterialsBand bendingchemistryOptoelectronicsQuantum efficiency0210 nano-technologybusinessLight-emitting diodeGaN tunnel junction
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Solution-processed transparent ferroelectric nylon thin films

2019

We have developed a method to solution process strongly hydrogen-bonded odd nylons into ferroelectric thin films.

Materials ScienceSoft robotics02 engineering and technology010402 general chemistry01 natural scienceslaw.inventionlawCeramicThin filmResearch Articleschemistry.chemical_classificationMultidisciplinaryFerroelectric polymersbusiness.industrytechnology industry and agricultureSciAdv r-articlesNonlinear opticsPolymer021001 nanoscience & nanotechnologyFerroelectricity0104 chemical sciencesCapacitorchemistryvisual_artvisual_art.visual_art_mediumOptoelectronics0210 nano-technologybusinessResearch ArticleScience Advances
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Large, Highly Modular Narrow-Gap Electrolytic Flow Cell and Application in Dehydrogenative Cross-Coupling of Phenols

2019

The successive scale-up of electrochemical reactions is crucial with regard to the implementation of technical electro-organic syntheses. Therefore, we developed a scalable modular parallel-plate e...

Materials science010405 organic chemistrybusiness.industryOrganic ChemistryFlow cellElectrolyteModular design010402 general chemistryElectrochemistry01 natural sciences0104 chemical sciencesCoupling (electronics)Narrow gapOptoelectronicsPhysical and Theoretical ChemistrybusinessOrganic Process Research & Development
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Comparison of conventional and dense dispersion managed systems for 160 Gb/s transmissions

2006

International audience; In this paper, we carry out, by numerical simulations and experiments on recirculating loop.. a comparative analysis of the performances of two types of dispersion management techniques for 160 Gb/s transmission systems, which correspond to short-period dispersion maps (dense dispersion management) and long-period dispersion maps (conventional dispersion management), respectively. We show that the dense dispersion management system suffers performance degradation by the effects of polarization mode dispersion (PMD) and fiber splicing losses, in a more dramatic manner than in the system with long-period map. We experimentally find that, at constant PMD, dense dispersi…

Materials science02 engineering and technology01 natural sciences010309 optics020210 optoelectronics & photonicsOptics0103 physical sciencesFusion splicingDispersion (optics)0202 electrical engineering electronic engineering information engineeringModal dispersionElectrical and Electronic EngineeringPhysical and Theoretical Chemistry[PHYS.PHYS.PHYS-AO-PH]Physics [physics]/Physics [physics]/Atmospheric and Oceanic Physics [physics.ao-ph]business.industryTransmission systemAtomic and Molecular Physics and OpticsElectronic Optical and Magnetic Materials[CHIM.THEO]Chemical Sciences/Theoretical and/or physical chemistry[CHIM.THEO] Chemical Sciences/Theoretical and/or physical chemistry[ PHYS.PHYS.PHYS-AO-PH ] Physics [physics]/Physics [physics]/Atmospheric and Oceanic Physics [physics.ao-ph]Transmission (telecommunications)Polarization mode dispersion[ CHIM.THEO ] Chemical Sciences/Theoretical and/or physical chemistryDispersion managedbusiness
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Wavelength-selective directional coupling with dielectric-loaded plasmonic waveguides

2009

International audience; We consider wavelength-selective splitting of radiation using directional couplers (DCs) formed by dielectric-loaded surface-plasmon-polariton waveguides (DLSPPWs). The DCs were fabricated by depositing subwavelength-sized polymer ridges on a gold film using large-scale UV photolithography and characterized at telecommunications wavelengths with near-field microscopy. We demonstrate a DLSPPW-based 45-mu m-long DC comprising 3 mu m offset S bends and 25-mu m-long parallel waveguides that changes from the "through" state at 1500 nm to 3 dB splitting at 1600 nm, and show that a 50.5-mu m-long DC should enable complete separation of the radiation channels at 1400 and 162…

Materials science02 engineering and technologyDielectric01 natural scienceslaw.invention010309 opticsOpticslaw[ PHYS.COND.CM-MSQHE ] Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall]0103 physical sciences[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics[PHYS.COND.CM-MSQHE]Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall]PlasmonTotal internal reflectionbusiness.industrySurface plasmon021001 nanoscience & nanotechnologyAtomic and Molecular Physics and OpticsWavelength[SPI.OPTI]Engineering Sciences [physics]/Optics / PhotonicPower dividers and directional couplersOptoelectronicsNear-field scanning optical microscope[ SPI.NANO ] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics[ SPI.OPTI ] Engineering Sciences [physics]/Optics / PhotonicPhotolithography0210 nano-technologybusiness
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