Search results for "positron"

Helium bubbles in alpha-irradiated aluminium: positron lifetime studies

1985

The formation of He-stabilised voids in aluminium single crystals injected with helium is monitored by positron lifetime measurements. The bubbles are observed to grow during annealing from 300 to 930K. The bubbles are extremely stable and survive annealing up to the melting point. Positron lifetime data are used to discuss the He density inside the bubbles and their growth mechanism.

Temperature dependence of slow-positron production and of positronium formation on untreated surfaces

1987

Low-energy positron emission from tungsten moderators, placed at a electron accelerator beam stop slows down with increasing moderator temperature. Efficient positronium formation is reported on untreated and unoriented metal surfaces at higher target temperatures.

Positron studies of hydrogen-defect interactions in proton irradiated molybdenum

1985

Molybdenum single crystals are irradiated at 20 K with 6 MeV protons. The radiation damage and lattice defect annealing is studied by positron lifetime spectroscopy in the temperature range from 15 to 720 K. Loss of vacancies due to recombination with mobile interstitials is observed at 40 K (Stage I) in agreement with resistivity measurements. This is the first time Stage I is observed by positrons below 77 K. The implanted hydrogen decorates the vacancies around 100 K, which is consistent with a hydrogen migration energy in molybdenum:E H = 0.3–0.4 eV. Clustering of spatially correlated vacancies takes place in a wide temperature region below the usual vacancy clustering stage (Stage III)…

Positron lifetime measurements on neutron‐irradiated InP crystals

1996

Neutron‐irradiated InP single crystals have been investigated by positron‐lifetime measurements. The samples were irradiated with thermal neutrons at different fluences yielding concentrations for Sn‐transmuted atoms between 2×1015 and 2×1018 cm−3. The lifetime spectra have been analyzed into one exponential decay component. The mean lifetimes show a monotonous increase with the irradiation dose from 246 to 282 ps. The increase in the lifetime has been associated to a defect containing an Indium vacancy. Thermal annealing at 550 °C reduces the lifetime until values closed to those obtained for the as‐grown and conventionally doped InP crystals. navarrof@evalvx.ific.uv.es ; Jose.Ferrero@uv.es

The “accumulation effect” of positrons in the stack of foils, detected by measurements of the positron implantation profile

2013

The profiles of positrons implanted from the radioactive source 22Na into a stack of foils and plates are the subject of our experimental and theoretical studies. The measurements were performed using the depth scanning of positron implantation profile method, and the theoretical calculations using the phenomenological multi-scattering model (MSM). Several stacks consisting of silver, gold and aluminum foils, and titanium and germanium plates were investigated. We notice that the MSM describes well the experimental profiles; however when the stack consisting of silver and gold foils, the backscattering and linear absorption coefficients differ significantly from those reported in the litera…

Temperature- and illumination-induced charge-state change in divacancies of GaTe

2010

Temperature-dependent positron annihilation lifetime spectroscopy measurements have been performed in GaTe samples, with and without illumination. The average lifetime shows a monotonous temperature evolution but the lifetime decomposition shows a rich behavior. It is produced by two types of vacancy defects. The vacancy-type defects characterized by their shorter lifetime change their charge state below 100 K and when illuminating with light of an energy of 0.8 eV.

Calorimetric and Positron Lifetime Measurements οf Hydrogenated Carbon Nanocones

2010

Investigations into the Influence of Hydrogen and Defects on the Spectra of Lifetime of Positrons in Palladium

2001

Low-temperature positron-lifetime studies of proton-irradiated silicon

1990

The positron-lifetime technique has been used to identify defects created in high-purity single-crystal silicon by irradiation with 12-MeV protons at 15 K, and the evolution of the defects has been studied by subsequent annealings between 20 and 650 K. Two clear annealing steps were seen in the samples, the first starting at 100 K and the other at 400 K. The first is suggested to be a result of the migration of free, negatively charged monovacancies, and the second is connected to the annealing of some vacancy-impurity complexes, probably negatively charged vacancy-oxygen pairs. The specific trapping rate of positrons to both of these negatively charged monovacancy-type defects has been fou…

New Schemes for the Production and Spectroscopy of Positronium

1989

The rate of positronium formation has been increased by 2–3 orders of magnitude using recently developed accelerator based slow positron sources. This opens the possibility of improvements of precision experiments on the Ps atom as well as new experiments on excited states. First evidence for enhanced metastable Ps formation is presented and future possibilities are discussed.