Search results for "puolijohteet"
showing 7 items of 27 documents
Polymorphic chiral squaraine crystallites in textured thin films
2020
Chirality 32(5), 619 - 631 (2020). doi:10.1002/chir.23213
Models for quantum dots and rings
2003
Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering
2020
The suitability of Ti as a band gap modifier for &alpha
Flat-band superconductivity in strained Dirac materials
2016
We consider superconducting properties of a two-dimensional Dirac material such as graphene under strain that produces a flat band spectrum in the normal state. We show that in the superconducting state, such a model results in a highly increased critical temperature compared to the case without the strain, inhomogenous order parameter with two-peak shaped local density of states and yet a large and almost uniform and isotropic supercurrent. This model could be realized in strained graphene or ultracold atom systems and could be responsible for unusually strong superconductivity observed in some graphite interfaces and certain IV-VI semiconductor heterostructures.
Puolijohdediodit ulkoisen sädehoidon potilasannosmittauksissa
2008
Heavy-Ion-Induced Defects in Degraded SiC Power MOSFETs
2023
Cathodoluminescence spectroscopy is used to investigate the formation of point- and extended defects in SiC power MOSFETs exposed to heavy-ions. Devices showing single event leakage current (SELC) effects are analysed and compared to pristine samples. Common luminescence peaks of defect centers localized in the thermal-SiO2 are identified, together with peaks at the characteristic wavelength of extended defects.
Unifying Concepts for Ion-Induced Leakage Current Degradation in Silicon Carbide Schottky Power Diodes
2020
The onset of ion-induced reverse leakage current in SiC Schottky diodes is shown to depend on material properties, ion LET, and bias during irradiation, but not the voltage rating of the parts. This is demonstrated experimentally for devices from multiple manufacturers with voltage ratings from 600 V to 1700 V. Using a device with a higher breakdown voltage than required in the application does not provide increased robustness related to leakage current degradation, compared to using a device with a lower voltage rating. peerReviewed