Search results for "quantum well"
showing 10 items of 76 documents
Nitride-based heterostructures grown by MOCVD for near- and mid-infrared intersubband transitions
2007
Intersubband (lSB) optical absorption in different nitride-based heterostructures grown by metal-organic chemical vapour deposition (MOCVD) is reported. The role of indium in AlInN/GaN multi-quantum wells (MQWs) is investigated. At high concentration (15%) AlInN is quasi lattice-matched to GaN and no cracks appear in the structure. At very low indium concentration (similar to 2%) the material quality is improved without decreasing the ISB transition wavelength with respect to the case of indium-free structures. Different mechanisms of strain relaxation in pure and 2% indium-doped AlN/GaN MQW structures are also investigated. ISB transition wavelengths of 2 urn for AlN/GaN MQWs, and 3 mu n f…
Effects of 5 MeV electron irradiation on deep traps and electroluminescence from near-UV InGaN/GaN single quantum well light-emitting diodes with and…
2020
The electrical properties, electroluminescence (EL) power output and deep trap spectra were studied before and after 5 MeV electron irradiation of near-UV single-quantum-well (SQW) light-emitting diodes (LED) structures differing by the presence or absence of InAlN superlattice underlayers (InAlN SL UL). The presence of the underlayer is found to remarkably increase the EL output power and the radiation tolerance of LEDs, which correlates with a much lower and more slowly changing density of deep traps in the QW region with radiation dose, and the higher lifetime of charge carriers, manifested by higher short-circuit current and open-circuit voltage in current–voltage characteristics under …
Phonon dispersion in GaN/AlN non‐polar quantum wells: confinement and anisotropy
2007
We have calculated the phonon dispersion relations in a non-polar GaN/AlN quantum well within the dielectric continuum model and making use of Loudon's model of uniaxial crystals. Due to the strong in-plane anisotropy of this orientation, we have found that in general ordinary and extraordinary phonons are not decoupled. In this work we analyze the conditions for the occurrence of interface modes. In these novel heterostructures there is an added dependence of the phonon dispersion on the orientation of the in-plane phonon wavevector, which allows the existence of interface phonons at energies forbidden in the better known polar structures. Under particular circumstances the vibrations exci…
Topological insulators and thermoelectric materials
2012
Topological insulators (TIs) are a new quantum state of matter which have gapless surface states inside the bulk energy gap. Starting with the discovery of two dimensional TIs, the HgTe-based quantum wells, many new topological materials have been theoretically predicted and experimentally observed. Currently known TI materials can possibly be classified into two families, the HgTe family and the Bi2Se family. The signatures found in the electronic structure of a TI also cause these materials to be excellent thermoelectric materials. On the other hand, excellent thermoelectric materials can be also topologically trivial. Here we present a short introduction to topological insulators and the…
How does an In-containing underlayer prevent the propagation of defects in InGaN QW LEDs?: identification of SRH centers and modeling of trap profile
2021
Recent reports indicated that the use of an InAlN underlayer (UL) can significantly improve the efficiency of InGaN/GaN quantum well (QW) LEDs. Currently, this result is explained by considering that the UL reduces the density of nonradiative recombination centers in the QWs. However, an experimental proof of the reduction of defects in the QWs is not straightforward. In this paper, we use combined electrical (I-V), optical (L-I), capacitance (C-V), steady-state photocapacitance (SSPC) and light-assisted capacitance-voltage (LCV) measurements to explain why devices with UL have a much higher efficiency than identical LEDs without UL. Specifically, we demonstrated an improvement in both elec…
Microcavity Light Emitting Diodes Based on GaN membranes Grown by Molecular Beam Epitaxy on Silicon
2003
Resonant-cavity InGaN/GaN quantum well light emitting diodes have been fabricated. Nitride layers were grown by molecular beam epitaxy on Si (111). We fabricated the structures using a combination of Si substrate etching, GaN etching and dielectric (Ta2O5/SiO2) mirror deposition. The electroluminescence spectra show that the emission within the distributed Bragg reflector stop band is enhanced in the membrane microcavity. The cavity modes are broadened by some cavity length non-uniformity that is introduced when the GaN is back etched to adjust the cavity length. This process does not need any transfer on an intermediate host substrate and is fully compatible with large area semiconductor p…
Momentum and energy dissipation of hot electrons in a Pb/Ag(111) quantum well system
2021
The band structure of multilayer systems plays a crucial role for the ultrafast hot carrier dynamics at interfaces. Here, we study the energy- and momentum-dependent quasiparticle lifetimes of excited electrons in a highly ordered Pb monolayer film on Ag(111) prior and after the adsorption of a monolayer of 3,4,9,10-perylene-tetracarboxylic dianhydride (PTCDA). Using time-resolved two-photon momentum microscopy with femtosecond visible light pulses, we show that the electron dynamics of the Pb/Ag(111) quantum well system is largely dominated by two types of scattering processes: (i) isotropic intraband scattering processes within the quantum well state (QWS) and (ii) isotropic interband sca…
Optical and Vibrational Properties of Self-assembled GaN Quantum Dots
2008
Publisher Summary This chapter describes quantum dots (QDs) based on group III nitrides (III-N). They are expected to be the active medium of new optoelectronic devices operating at high powers and high temperatures. Besides the well-known advantages of their bulk and quantum well (QW) counterparts, III-N QDs provide strong confinement of carriers in nearly perfect zero-dimensional boxes. Quantum effects provide new degrees of freedom for the design of advanced devices. The chapter reviews the systems of dots that appear spontaneously during epitaxial growth without the need of artificial post-processing and designate them as self-assembled or self-organized QDs regardless of the mechanism …
Self-assembled metal-oxide nanoparticles on GaAs: infrared absorption enabled by localized surface plasmons
2021
Abstract Metal-oxides hold promise as superior plasmonic materials in the mid-infrared compared to metals, although their integration over established material technologies still remains challenging. We demonstrate localized surface plasmons in self-assembled, hemispherical CdZnO metal-oxide nanoparticles on GaAs, as a route to enhance the absorption in mid-infrared photodetectors. In this system, two localized surface plasmon modes are identified at 5.3 and 2.7 μm, which yield an enhancement of the light intensity in the underlying GaAs. In the case of the long-wavelength mode the enhancement is as large as 100 near the interface, and persists at depths down to 50 nm. We show numerically t…