Search results for "raman scattering"

showing 10 items of 284 documents

RF magnetron-sputtered coatings deposited from biphasic calcium phosphate targets for biomedical implant applications

2017

Bioactive calcium phosphate coatings were deposited by radio-frequency magnetron sputtering from biphasic targets of hydroxyapatite and tricalcium phosphate, sintered at different mass % ratios. According to Raman scattering and X-ray diffraction data, the deposited hydroxyapatite coatings have a disordered structure. High-temperature treatment of the coatings in air leads to a transformation of the quasi-amorphous structure into a crystalline one. A correlation has been observed between the increase in the Ca content in the coatings and a subsequent decrease in Ca in the biphasic targets after a series of deposition processes. It was proposed that the addition of tricalcium phosphate to th…

DiffractionMaterials scienceBiocompatibilityBiomedical Engineeringchemistry.chemical_elementBiphasic hydroxyapatite-tricalcium02 engineering and technologyCalciumengineering.material010402 general chemistryPlasma coatings01 natural sciencesArticleBiomaterialssymbols.namesakeCoatinglcsh:TA401-492Biphasic hydroxyapatite-tricalcium phosphate targetsThin hydroxyapatite coatingslcsh:QH301-705.5Deposition (law)phosphate targetsMetallurgySputter deposition021001 nanoscience & nanotechnology0104 chemical scienceschemistryChemical engineeringlcsh:Biology (General)Cavity magnetronsymbolsengineeringBiocompatibilitylcsh:Materials of engineering and construction. Mechanics of materialsRF-magnetron sputtering0210 nano-technologyRaman scatteringBiotechnologyBioactive Materials
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FeMoO4 Revisited: Crosslike 90° Noncollinear Antiferromagnetic Structure Caused by Dzyaloshinskii–Moriya Interaction

2021

The ground state of Fe2+ (S = 2) in α- and β-FeMoO4 is investigated by experiments including X-ray diffraction, Raman scattering, and 57Fe–Mossbauer spectroscopy below 300 K and evaluated by theore...

DiffractionMaterials scienceCondensed matter physics02 engineering and technology010402 general chemistry021001 nanoscience & nanotechnology01 natural sciences0104 chemical sciencesSurfaces Coatings and FilmsElectronic Optical and Magnetic Materialssymbols.namesakeGeneral EnergysymbolsAntiferromagnetismPhysical and Theoretical Chemistry0210 nano-technologyGround stateSpectroscopyRaman scatteringThe Journal of Physical Chemistry C
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Raman scattering as a tool for the evaluation of strain inGaN∕AlNquantum dots: The effect of capping

2007

The strain state of $\mathrm{Ga}\mathrm{N}∕\mathrm{Al}\mathrm{N}$ quantum dots grown on $6H\text{\ensuremath{-}}\mathrm{Si}\mathrm{C}$ has been investigated as a function of AlN capping thickness by three different techniques. On the one hand, resonant Raman scattering allowed the detection of the ${A}_{1}(\mathrm{LO})$ quasiconfined mode. It was found that its frequency increases with AlN deposition, while its linewidth did not evolve significantly. Available experiments of multiwavelength anomalous diffraction and diffraction anomalous fine structure on the same samples provided the determination of the wurtzite lattice parameters $a$ and $c$ of the quantum dots. A very good agreement is …

DiffractionMaterials scienceCondensed matter physicsScatteringbusiness.industryLattice (group)Condensed Matter PhysicsSpectral lineElectronic Optical and Magnetic MaterialsCondensed Matter::Materials Sciencesymbols.namesakeOpticsQuantum dotsymbolsRaman spectroscopybusinessRaman scatteringWurtzite crystal structurePhysical Review B
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Raman scattering and infrared reflectivity in [(InP)5(In0.49Ga0.51As)8]30 superlattices

2000

6 páginas, 6 figuras, 1 tabla.

DiffractionMaterials scienceIII-V semiconductorsInfraredPhononSuperlatticeGeneral Physics and AstronomyReflectivityMolecular physicsSpectral linesymbols.namesakeCondensed Matter::Materials ScienceGallium arsenideIndium compounds:FÍSICA [UNESCO]Interface phononsbusiness.industryIndium compounds ; Gallium arsenide ; III-V semiconductors ; Semiconductor superlattices ; Raman spectra ; Infrared spectra ; Reflectivity ; Interface phonons ; Semiconductor epitaxial layersUNESCO::FÍSICASemiconductor epitaxial layersInfrared spectraCondensed Matter::Mesoscopic Systems and Quantum Hall EffectsymbolsOptoelectronicsRaman spectrabusinessRaman spectroscopySemiconductor superlatticesRaman scatteringMolecular beam epitaxy
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Evaluation of strain in GaN/AlN quantum dots by means of resonant Raman scattering: the effect of capping

2007

We have studied in detail changes in the strain state of GaN/AlN quantum dots during the capping process. μ-Raman scattering experiments allowed the detection of a resonant mode which provided information on the evolution of strain with capping. Simultaneously, Multiwavelength Anomalous Diffraction (MAD) and Diffraction Anomalous Fine Structure (DAFS) experiments were performed on the same samples, providing the independent determination of the wurtzite lattice parameters a and c. The remarkable agreement between Raman and X-ray data stands out the suitability of polar vibrational modes for the determination of strain in nanostructures. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

DiffractionNanostructureChemistryScatteringAnalytical chemistryCondensed Matter PhysicsMolecular physicsCondensed Matter::Materials Sciencesymbols.namesakeQuantum dotMolecular vibrationsymbolsRaman spectroscopyRaman scatteringWurtzite crystal structurephysica status solidi c
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Structural and vibrational properties of CdAl2S4 under high pressure: Experimental and theoretical approach

2014

The behavior of defect chalcopyrite CdAl2S4 at high pressures and ambient temperature has been investigated in a joint experimental and theoretical study. High-pressure X-ray diffraction and Raman scattering measurements were complemented with theoretical ab initio calculations. The equation of state and pressure dependences of the structural parameters of CdAl2S4 were determined and compared to those of other AB(2)X(4) ordered-vacancy compounds. The pressure dependence of the Raman-active mode frequencies is reported, as well as the theoretical phonon dispersion curves and phonon density of states at 1 atm. Our measurements suggest that defect chalcopyrite CdAl2S4 undergoes a phase transit…

DiffractionPhase transitionEquation of stateHigh-pressurePhononSpinelCondensed Matter::Materials Sciencesymbols.namesakeAb initio quantum chemistry methodsPhase (matter)Physical and Theoretical ChemistryRamanCondensed matter physicsChemistryDefect chalcopyriteSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsOrdered-vacancy compoundsX-ray diffractionCrystallographyGeneral EnergyFISICA APLICADAsymbolsRaman spectroscopyRaman scattering
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Experimental and Theoretical Studies on alfa-In2Se3 at High Pressure

2018

[EN] alpha(R)-In2Se3 has been experimentally and theoretically studied under compression at room temperature by means of X-ray diffraction and Raman scattering measurements as well as by ab initio total-energy and lattice-dynamics calculations. Our study has confirmed the alpha (R3m) -> beta' (C2/m) ? beta (R (3) over barm) sequence of pressure-induced phase transitions and has allowed us to understand the mechanism of the monoclinic C2/m to rhombohedral R (3) over barm phase transition. The monoclinic C2/m phase enhances its symmetry gradually until a complete transformation to the rhombohedral R (3) over barm structure is attained above 10-12 GPa. The second-order character of this transi…

DiffractionPhase transitionHigh-pressureAb initio02 engineering and technology01 natural sciencesInorganic ChemistryCondensed Matter::Materials Sciencesymbols.namesake0103 physical sciencesPhysical and Theoretical Chemistry010306 general physicsRamanPhase transitionIndium selenideChemistry021001 nanoscience & nanotechnologySymmetry (physics)X-ray diffractionCrystallographyFISICA APLICADAX-ray crystallographyAb initiosymbols0210 nano-technologyRaman spectroscopyRaman scatteringMonoclinic crystal system
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Zircon to monazite phase transition in CeVO4: X-ray diffraction and Raman-scattering measurements

2011

X-ray diffraction and Raman-scattering measurements on cerium vanadate have been performed up to 12 and 16 GPa, respectively. Experiments reveal at 5.3 GPa the onset of a pressure-induced irreversible phase transition from the zircon to the monazite structure. Beyond this pressure, diffraction peaks and Raman-active modes of the monazite phase are measured. The zircon-to-monazite transition in CeVO4 is distinctive among the other rare-earth orthovanadates. We also observed softening of external translational T(Eg )a nd internalν2(B2g) bending modes. We attribute it to mechanical instabilities of zircon phase against the pressure-induced distortion. We additionally report lattice-dynamical a…

DiffractionPhase transitionMaterials scienceAnalytical chemistrychemistry.chemical_elementCondensed Matter PhysicsPhysics::GeophysicsElectronic Optical and Magnetic MaterialsCondensed Matter::Materials Sciencesymbols.namesakeCeriumchemistryMonazitePhase (matter)X-ray crystallographysymbolsRaman scatteringZirconPhysical Review B
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High-pressure theoretical and experimental study of HgWO4

2011

HgWO 4 at ambient pressure is characterized using a combination of ab initio calculations, X-ray diffraction and Raman scattering measurements. The effect of low pressure and temperature on the structural stability is analysed. Extending our ab initio study to the range of higher pressures, a sequence of stable phases up to 30GPa is proposed. © 2011 Taylor & Francis.

DiffractionRaman scatteringLow pressuresX ray diffractionAb initioExperimental studiesPressure effectsMolecular physicsStable phasisScatteringCondensed Matter::Materials Sciencesymbols.namesakeAb initio quantum chemistry methodsX raysScatteringChemistryRaman Scattering measurementsTungstatesCondensed Matter PhysicsX-ray diffractionAmbient pressuresAb initio studyStructural stabilityPhase transitionsFISICA APLICADAX-ray crystallographysymbolsStructural stabilitiesTungsten compoundsAb initio calculationsCalculationsDiffractionStabilityRaman scatteringAmbient pressure
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II–VI and II1−xMnxVI semiconductor nanocrystals formed by the pressure cycle method

2005

II–VI and II1−x Mn x VI nanocrystals were prepared by the pressure cycle method using the Paris–Edinburgh cell. The recovered samples are nanocrystals in the cubic phase zinc-blend (ZB) structure and were characterized using transmission electron microscopy, electron diffraction, X-ray diffraction and Raman scattering. Transmission electron micrographs show that these nanocrystals are nearly spherical with diameters ranging from 20 to 50 nm depending on the sample under investigation. The Raman scattering measurements confirm the existence of II–VI nanocrystals in the cubic phase (ZB). The magnetic properties of Cd0.5Mn0.5Te nanoparticles were found to vary with the particle size and were d…

Diffractionsymbols.namesakeMaterials scienceElectron diffractionNanocrystalTransmission electron microscopyQuantum dotPhase (matter)symbolsAnalytical chemistryNanoparticleCondensed Matter PhysicsRaman scatteringHigh Pressure Research
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