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RESEARCH PRODUCT
Evaluation of strain in GaN/AlN quantum dots by means of resonant Raman scattering: the effect of capping
V. Favre-nicolinV. Favre-nicolinAndrés CantareroMaria Grazia ProiettiJohann CorauxJohann CorauxHubert RenevierHubert RenevierBruno DaudinJ. A. BudagoskyAna CrosNúria Garrosubject
DiffractionNanostructureChemistryScatteringAnalytical chemistryCondensed Matter PhysicsMolecular physicsCondensed Matter::Materials Sciencesymbols.namesakeQuantum dotMolecular vibrationsymbolsRaman spectroscopyRaman scatteringWurtzite crystal structuredescription
We have studied in detail changes in the strain state of GaN/AlN quantum dots during the capping process. μ-Raman scattering experiments allowed the detection of a resonant mode which provided information on the evolution of strain with capping. Simultaneously, Multiwavelength Anomalous Diffraction (MAD) and Diffraction Anomalous Fine Structure (DAFS) experiments were performed on the same samples, providing the independent determination of the wurtzite lattice parameters a and c. The remarkable agreement between Raman and X-ray data stands out the suitability of polar vibrational modes for the determination of strain in nanostructures. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2007-06-01 | physica status solidi c |