Search results for "resistivity"
showing 10 items of 385 documents
Structural, electrical and optical properties of zinc‐iridium oxide thin films deposited by DC reactive magnetron sputtering
2014
ZnO-IrO2 thin films were deposited on glass by DC reactive magnetron sputtering at room tem-perature. Structural, electrical and optical properties were investigated as a function of iridium atomic concentra-tion in the films. XRD data shows that ZnO-IrO2 thin films are X-ray amorphous and Raman spectrum resembles the spectrum of IrO2, without any distinct features of wurtzite ZnO structure. The lowest film resistivity and the highest transmittance achieved in the present study were 1.4 × 10-3 Ωcm and 33% at 550 nm, respectively. However, resistivity and transmittance are inversely related to the iridium concentration in the films.
Surface-state electrons on a hydrogen film. 1. Annealing of the film
1991
We have investigated the surface of thin films (thickness ∼2 µm) of solid H2 between 1.5 and 4.2 K by measuring the ac conductivity of surface-state electrons (SSE). The films were prepared on a glass substrate by quench condensation at 1.5 K and were therefore initially strongly disordered. In fact the surface of the virgin films before any heat treatment was so rough that no current due to SSE could be observed. Annealing the films decreased the surface roughness and gave rise to a thermal-activation-type temperature dependence of the SSE conductivity. By proper heat treatment up to 8 K the activation energy could be reduced to 10kB.
Stability, sub-gap current, 1/f-noise, and elemental depth profiling of annealed Al:Mn-AlOX-Al normal metal-insulator-superconducting tunnel junctions
2016
In this paper we report a study of the effect of vacuum annealing at 400◦C on the properties of normal metal-insulator-superconductor (NIS) tunnel junctions, with manganese doped aluminium (Al:Mn) as the normal metal, aluminum as the superconductor and amorphous aluminum oxide as the tunneling barrier (Al:Mn-AlOx-Al). The annealing treatment improves the stability of the junctions, increases their tunneling resistance and does not have a negative impact on the low-temperature current-voltage characteristics. The measured 1 / f resistance noise of the junctions also changes after annealing, in the best case decreasing by over an order of magnitude. All these observations show that annealing …
Understanding the Conversion Process of Magnetron-Deposited Thin Films of Amorphous ReO$_x$ to Crystalline ReO$_3$ upon Thermal Annealing
2020
Crystal growth & design 20(9), 6147 - 6156 (2020). doi:10.1021/acs.cgd.0c00848
Tuning the Direct and Indirect Excitonic Transitions of h-BN by Hydrostatic Pressure
2021
The pressure dependence of the direct and indirect bandgap transitions of hexagonal boron nitride is investigated using optical reflectance under hydrostatic pressure in an anvil cell with sapphire windows up to 2.5 GPa. Features in the reflectance spectra associated with the absorption at the direct and indirect bandgap transitions are found to downshift with increasing pressure, with pressure coefficients of −26 ± 2 and −36 ± 2 meV GPa–1, respectively. The GW calculations yield a faster decrease of the direct bandgap with pressure compared to the indirect bandgap. Including the strong excitonic effects through the Bethe–Salpeter equation, the direct excitonic transition is found to have a…
Epoxy Resin/Carbon Black Composites Below the Percolation Threshold
2013
International audience; A set of epoxy resin composites filled with 0.25-2.0 wt.% of commercially available ENSACO carbon black (CB) of high and low surface area (CBH and CBL respectively) has been produced. The results of broadband dielectric spectroscopy of manufactured CB/epoxy below the percolation threshold in broad temperature (200 K to 450 K) and frequency (20 Hz to 1 MHz) ranges are reported. The dielectric properties of composites below the percolation threshold are mostly determined by alpha relaxation in pure polymer matrix. The glass transition temperature for CB/epoxy decreases in comparison with neat epoxy resin due to the extra free volume at the polymer-filler interface. At …
Two-terminal nanoelectromechanical devices based on germanium nanowires.
2009
A two-terminal bistable device, having both ON and OFF regimes, has been demonstrated with Ge nanowires using an in situ TEM-STM technique. The function of the device is based on delicately balancing electrostatic, elastic, and adhesion forces between the nanowires and the contacts, which can be controlled by the applied voltage. The operation and failure conditions of the bistable device were investigated, i.e. the influence of nanowire diameter, the surface oxide layer on the nanowires and the current density. During ON/OFF cycles the Ge nanowires were observed to be more stable than carbon nanotubes, working at similar conditions, due to the higher mechanical stability of the nanowires. …
Electromagnetic shielding efficiency in Ka-band: carbon foam versus epoxy/carbon nanotube composites
2012
The wide application of microwaves stimulates searching for new materials with high electrical conductivity and electromagnetic (EM) interference shielding effectiveness (SE). We conducted a comparative study of EM SE in K a -band demonstrated by ultra-light micro-structural porous carbon solids (carbon foams) of different bulk densities, 0.042 to 0.150 g/cm 3 , and conventional flexible epoxy resin filled with carbon nanotubes (CNTs) in small concentrations, 1.5 wt.%. Microwave probing of carbon foams showed that the transmission through a 2 mm-thick layer strongly decreases with decreasing the pore size up to the level of 0.6%, due to a rise of reflectance ability. At the same time, 1 mm…
High-temperature transport properties of La0.67Ca0.33MnO3 films
1999
Abstract The giant negative magnetoresistance in manganites has been investigated from the Curie temperature T c up to 600 K (2.6 T c ) in magnetic fields up to 8 T. Nonadiabatic small polaron hopping can successfully describe the temperature dependence of the resistivity. The magnetic field influence on the activation energy is explained by the interaction of unclustered ions with small spin clusters of four ions.
Magnetic properties of the TbMn2 single crystals
1999
Abstract Single crystals of TbMn 2 were grown by the Czochralski method from a levitated melt. Results of electrical resistivity, magnetization in strong magnetic fields along the principal crystallographic directions, AC and DC magnetic susceptibility and the temperature dependence of the lattice parameter are presented.