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showing 10 items of 41198 documents
Quasi-antiferromagnetic multilayer stacks with 90 degree coupling mediated by thin Fe oxide spacers
2019
We fabricated quasiantiferromagnetic (quasi-AFM) layers with alternating antiparallel magnetization in the neighboring domains via 90° magnetic coupling through an Fe-O layer. We investigated the magnetic properties and the relationship between the magnetic domain size and the 90° magnetic coupling via experiments and calculations. Two types of samples with a Ru buffer and a (Ni80Fe20)Cr40 buffer were prepared, and we found that with the NiFeCr buffer, the sample has a flatter Fe-O layer, leading to stronger 90° magnetic coupling and a smaller domain size compared with the Ru buffer sample. This trend is well explained by the bilinear and biquadratic coupling coefficients, A12 and B12, in L…
Impact of Annealing Temperature on Tunneling Magnetoresistance Multilayer Stacks
2020
The effect of annealing temperatures on the tunnel magnetoresistance (TMR) of MgO-based magnetic tunnel junctions (MTJs) has been investigated for annealing between 190 and 370°C. The TMR shows a maximum value of 215% at an annealing temperature of 330°C. A strong sensitivity of the TMR and the exchange bias of the pinned ferromagnetic layers on the annealing temperature are observed. Depending on sensor application requirements, the MTJ can be optimized either for stability and pinning strength or for a high TMR signal by choosing the appropriate annealing temperature. The switching mechanism of the ferromagnetic layers in the MTJ and the influence of the annealing on the layer properties,…
Modification of magnetic anisotropy in Ni thin films by poling of (011) PMN-PT piezosubstrates
2016
ABSTRACTThis study reports the magnetic and magnetotransport properties of 20 nm thick polycrystalline Ni films deposited by magnetron sputtering on unpoled piezoelectric (011) [PbMg1/3Nb2/3O3]0.68-[PbTiO3]0.32 (PMN-PT) substrates. The magnetoresistance (MR), as well as the magnetization reversal, is found to depend on the polarization state of the piezosubstrate. Upon poling the PMN-PT substrate, which results in a transfer of strain to the Ni film, the MR value decreases by a factor of 12 at room temperature and a factor of 21 at 50 K for the current direction along the PMN-PT [100] direction, and slightly increases for the [01] current direction. Simultaneously, a strong increase in the …
Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride
2019
Abstract In this paper, the electrical behavior of a Ni/Au Schottky barrier on free standing GaN has been studied employing a variety of techniques and correlated with the material and interface quality. The temperature dependence of the ideality factor (n) and of the Schottky barrier height (ΦB) revealed a spatial inhomogeneity of the barrier. This behavior has been described by means of the Tung's model on inhomogeneous Schottky barriers. The origin of the barrier inhomogeneity can be likely associated to the surface quality of the GaN epilayer or to microstructure of the Ni/GaN interface.
Tetragonal Heusler Compounds for Spintronics
2013
With respect to the requirements of spin torque transfer (STT) materials, one the most promising materials families are the tunable tetragonal Heusler compounds based on Mn2YZ (Y=Co,Fe,Ni,Rh,...; Z=Al, Ga, Sn). They form the inverse cubic Heusler structure with three distinct magnetic sublattices, which allows a fine tuning of the magnetic properties. Starting with the stoichiometric Mn3Ga compound, we explored the complete phase diagram of Mn3-xYxZ (Y=Co, Fe, Ni and Z=Ga ). All series exhibit thermally stable magnetic properties. As we demonstrate, Mn3-xFexGa series, which are tetragonal over the whole range of compositions, are good as hard magnets, whereas magnetically more weak Mn3-xNix…
Isothermal relaxation of discommensurations in K2ZnCl4
1994
At the incommensurate-ferroelectric transition temperature T c of K 2 ZnCl 4 , the dielectric susceptibility contains an anomalous contribution both above and below T c . Previous quasi-static dielectric measurements and hysteresis loops demonstrated that this anomalous part arises from the peculiar dynamics of discommensurations. We have used isothermal dielectric measurements to get some insight into the long time dynamics of these discommensurations. We have found that the characteristic relaxation times τ are of the order of 10 4 s in the incommensurate and in the ferroelectric phase. Even more unusual is a non-monotonous relaxation which is observed in a restricted temperature range ab…
Space Charge Measurement under DC and DC Periodic Waveform
2018
In High Voltage systems, Partial Discharges (PDs) monitoring are one of the main diagnostic instrument to evaluate the reliability of the apparatus. Under Alternating Current (AC) stress, PDs detection and recognition techniques are well consolidated. On the contrary, the monitoring of PDs under Direct Current (DC) stress is difficult due to complexities related to the nature of the phenomenon, which cause the beginning of PDs events in proximity of the dielectric breakdown. This problem has been partially overcome by using a continuous Periodic waveform (DCP) with positive average value, as described in a recent published work. Under DC stress, another degradation factor is the Space Charg…
SrTiO3-doping effect on dielectric and ferroelectric behavior of Na0.5Bi0.5 TiO3 ceramics
2018
Lead-free (Na0.5Bi0.5)1-xSrxTiO3 ceramics (x = 0–0.04) were synthesized by a conventional mixed-oxide technique. The microstructure study showed a dense structure, in good agreement with that of ab...
High temperature oxidation of Mg2(Si-Sn)
2016
Abstract High temperature oxidation of Mg 2 Si 1- x Sn x alloys ( x = 0.1 ⿿ 0.6) has been investigated. The oxidation rate was slow for temperatures below 430 °C. In the temperature range between 430⿿500 °C all the alloys exhibited breakaway oxidation. The onset temperature of the breakaway region in general decreased with increasing level of Sn in the alloy. The breakaway behavior is explained by a combination of the formation of a non-protective MgO layer and the formation of Sn-rich liquid at the interface between the oxide and Mg depleted Mg 2 Sn.
Effect of surface finishing on the oxidation behaviour of a ferritic stainless steel
2017
Abstract The corrosion behaviour and the oxidation mechanism of a ferritic stainless steel, K41X (AISI 441), were evaluated at 800 °C in water vapour hydrogen enriched atmosphere. Mirror polished samples were compared to as-rolled K41X material. Two different oxidation behaviours were observed depending on the surface finishing: a protective double (Cr,Mn) 3 O 4 /Cr 2 O 3 scale formed on the polished samples whereas external Fe 3 O 4 and (Cr,Fe) 2 O 3 oxides grew on the raw steel. Moreover, isotopic marker experiments combined with SIMS analyses revealed different growth mechanisms. The influence of surface finishing on the corrosion products and growth mechanisms was apprehended by means o…