Search results for "semiconductor"
showing 10 items of 974 documents
Quantum chemical simulations of doped ZnO nanowires for photocatalytic hydrogen generation
2016
Zinc oxide (ZnO) is considered in general as a promising material for solar water splitting. Its wurtzite-structured bulk samples, however, can be considered as active for photocatalytic applications only under UV irradiation, where they possess ∼1% efficiency of sunlight energy conversion due to their wide band gap (3.4 eV). Although pristine ZnO nanowires (NWs) possess noticeably narrower band gaps than the bulk, the tendency of band gap reduction with increasing NW diameter is insufficient, and further modification is required. We have contributed to filling this gap by performing a series of ab initio calculations on ZnO NWs of different diameters (dNW), which are mono-doped by metal (A…
Doped semiconductors as half-metallic materials: Experiments and first-principles calculations ofCoTi1−xMxSb(M=Sc, V, Cr, Mn, Fe)
2008
This work reports experiments and first-principles calculations on the substitutional semiconducting $C{1}_{b}$ compound $\mathrm{Co}{\mathrm{Ti}}_{1\ensuremath{-}x}{M}_{x}\mathrm{Sb}$. Diluted magnetic semiconductors have been prepared by substituting titanium in the semiconducting compound CoTiSb by other $3d$ transition elements $M$. Self-consistent calculations of the electronic structure predict some of the materials to be half-metallic ferromagnets. The structural, electronic, electric, and magnetic properties of the pure and substituted materials have been investigated. It is found from the experiments that substitution of up to 10% Ti by Fe, Mn, Cr, and V does not affect the crystal…
Unification of the electrical behavior of defects, impurities, and surface states in semiconductors: Virtual gap states in CdO
2009
In contrast to conventional semiconductors, native defects, hydrogen impurities, and surface states are all found to be donors in $n$-type CdO. Using this as a model system, the electrical behaviors of defects, dopants, and surface states in semiconductors are unified by a single energy level, the charge neutrality level, giving much insight into current materials and allowing a band-structure engineering scheme for obtaining desired custom electronic properties in new compound semiconductors.
Elastic, electronic and optical properties of boron- and nitrogen-doped 4,12,4-graphyne nanosheet
2020
Abstract The effects of boron (B) and nitrogen (N) dopants on 4,12,4-graphyne have been systematically investigated with density functional theory (DFT) calculations. The charge density analysis reveals that the N dopant at the sp-site destroys the acetylenic linkage in 4,12,4-graphyne, but instead tends to form a polar bond. The B- and N-doped 4,12,4-graphyne systems exhibit p- and n- semiconductor characters, respectively. Some obvious spin splitting polarizations can be observed in their band structures and DOS. Moreover, there is a giant difference in effective masses between electrons and electron holes, especially for B-doped 4,12,4-graphyne at C5 site. The directional electron and el…
Molecular semiconductor-doped insulator (MSDI) heterojunctions: an alternative transducer for gas chemosensing
2009
New organic devices including a heterojunction between a semiconducting molecular material (MS)--lutetium bisphthalocyanine (LuPc2)--and a doped insulator (DI)--copper phthalocyanine (Cu(F(n)Pc), where n = 0, 8, 16)--are designed and studied as transducers for redox-active species sensing.
Solution and on-surface synthesis of structurally defined graphene nanoribbons as a new family of semiconductors.
2018
Graphene nanoribbons (GNRs) with various structures and properties can be synthesized in solution or on surface.
Exfoliation of Alpha-Germanium: A Covalent Diamond-Like Structure
2021
2D materials have opened a new field in materials science with outstanding scientific and technological impact. A largely explored route for the preparation of 2D materials is the exfoliation of layered crystals with weak forces between their layers. However, its application to covalent crystals remains elusive. Herein, a further step is taken by introducing the exfoliation of germanium, a narrow-bandgap semiconductor presenting a 3D diamond-like structure with strong covalent bonds. Pure α-germanium is exfoliated following a simple one-step procedure assisted by wet ball-milling, allowing gram-scale fabrication of high-quality layers with large lateral dimensions and nanometer thicknesses.…
Flexible MgO-Based Magnetic Tunnel Junctions on Silicon Substrate
2018
Flexible electronic devices are emerging in many areas, providing novel features and creating new applications [1]. Due to their ubiquitous utilization, flexible magnetic sensors [2] play a critical part in this development. In particular, magnetic tunnel junctions (MTJs) are of great interest, because of advantages like low power consumption or high sensitivity. We report the development of flexible MTJs on a silicon substrate fabricated by a low-cost batch process [3]. Thereby, conventionally fabricated MTJ devices are transformed into flexible ones by thinning down the silicon wafer from 500 μm to 5 μm. This process leads to thin, bendable silicon devices, while maintaining their origina…
Effects of the Buffer Layers on the Performances of (Al,Ga)N Ultraviolet Photodetectors
2004
The fabrication of (Al,Ga)N-based metal–semiconductor–metal (MSM) photovoltaic detectors requires the growth of high-quality (Al,Ga)N films. Inserting a low-temperature deposited buffer layer enables the growth of an epitaxial layer with a reduced density of defects. Two structures using GaN and AlN buffer layers have been deposited by low-pressure metalorganic chemical vapor deposition and used to fabricate MSM interdigitated detectors. The devices have been characterized to investigate the effects of the buffer layers on the detector performances.
Printing ZnO Inks: From Principles to Devices
2020
Solution-based printing approaches permit digital designs to be converted into physical objects by depositing materials in a layer-by-layer additive fashion from microscale to nanoscale resolution. The extraordinary adaptability of this technology to different inks and substrates has received substantial interest in the recent literature. In such a context, this review specifically focuses on the realization of inks for the deposition of ZnO, a well-known wide bandgap semiconductor inorganic material showing an impressive number of applications in electronic, optoelectronic, and piezoelectric devices. Herein, we present an updated review of the latest advancements on the ink formulations an…