Search results for "semiconductor"
showing 10 items of 974 documents
Experimental and Theoretical Study of Bi2O2Se Under Compression
2018
[EN] We report a joint experimental and theoretical study of the structural, vibrational, elastic, optical, and electronic properties of the layered high-mobility semiconductor Bi2O2Se at high pressure. A good agreement between experiments and ab initio calculations is observed for the equation of state, the pressure coefficients of the Raman-active modes and the bandgap of the material. In particular, a detailed description of the vibrational properties is provided. Unlike other Sillen-type compounds which undergo a tetragonal to collapsed tetragonal pressure-induced phase transition at relatively low pressures, Bi2O2Se shows a remarkable structural stability up to 30 GPa; however, our res…
Attosecond state-resolved carrier motion in quantum materials probed by soft x-ray XANES
2021
Recent developments in attosecond technology led to tabletop X-ray spectroscopy in the soft X-ray range, thus uniting the element- and state-specificity of core-level x-ray absorption spectroscopy with the time resolution to follow electronic dynamics in real time. We describe recent work in attosecond technology and investigations into materials such as Si, SiO2, GaN, Al2O3, Ti, TiO2, enabled by the convergence of these two capabilities. We showcase the state-of-the-art on isolated attosecond soft x-ray pulses for x-ray absorption near edge spectroscopy (XANES) to observe the 3d-state dynamics of the semi-metal TiS2 with attosecond resolution at the Ti L-edge (460 eV). We describe how the …
Density-functional study of pressure-induced phase transitions and electronic properties of Zn2V2O7
2021
We report a study of the high-pressure behavior of the structural and electronic properties of Zn2V2O7 by means of first-principle calculations using the CRYSTAL code. Three different approaches have been used, finding that the Becke–Lee–Yang–Parr functional is the one that best describes Zn2V2O7. The reported calculations contribute to the understanding of previous published experiments. They support the existence of three phase transitions for pressures smaller than 6 GPa. The crystal structure of the different high-pressure phases is reported. We have also made a systematic study of the electronic band-structure, determining the band-gap and its pressure dependence for the different poly…
Quantum dots of Cd0.5Mn0.5Te semimagnetic semiconductor formed by the cold isostatic pressure method
2005
Abstract Cd0.5Mn0.5Te is a semimagnetic semiconductor, which crystallizes in the zinc-blende structure (ZB) and exhibits a magnetic spin glass like transition at 21 K. Under pressure it shows a first-order phase transition around 2.6 GPa to the NaCl like structure. In this work, the pressure cycled method using a Paris–Edinburgh cell up to 8 GPa has been applied to Cd0.5Mn0.5Te samples in order to obtain recovered nanocrystals. The nanoparticles have been characterized by EDX and electron microscopy. The X-ray and electron diffraction results confirmed the existence of nanocrystals in the ZB phase with an average size of 7 nm. Magnetization measurements made in the range of 2–300 K at low f…
Intervalley-scattering-induced electron-phonon energy relaxation in many-valley semiconductors at low temperatures
2005
We report on the effect of elastic intervalley scattering on the energy transport between electrons and phonons in many-valley semiconductors. We derive a general expression for the electron-phonon energy flow rate at the limit where elastic intervalley scattering dominates over diffusion. Electron heating experiments on heavily doped n-type Si samples with electron concentration in the range $3.5-16.0\times 10^{25}$ m$^{-3}$ are performed at sub-1 K temperatures. We find a good agreement between the theory and the experiment.
Photoelectrochemical study of electrochemically formed semiconducting yttrium hydride (YH3−x)
1999
Abstract The first photoelectrochemical study of semiconducting YH 3− x films formed by etching bulk Y metal in 0.5 M H 2 SO 4 solution is reported. The formation of semiconducting hydride having an indirect optical band gap, E g opt , of about 2.35 eV is confirmed by in situ photocurrent spectroscopy. The photoelectrochemical behaviour of such a phase was investigated both in alkaline and in acidic solutions. The flat band potential was estimated to be U fb =−1.25 V/NHE, independent of pH.
Erroneous p-type assignment by Hall effect measurements in annealed ZnO films grown on InP substrate
2013
We report on incorrect carrier type identification achieved by Hall effect measurements performed on ZnO films grown by pulsed laser deposition on InP substrates and subsequently annealed for 1 h at 600 C in air. While Hall measurements, after post-growth annealing, reveal a change in the electrical properties of the films, from n-type to p-type, both photocurrent-based and standard C V measurements performed on the same samples show no change in the native n-type doping of the ZnO films. A possible interpretation of the two results is reported. In particular, p-type conductivity observed by Hall effect may be ascribed to a highly conductive thin layer formed during the annealing process at…
Physicochemical characterisation of thermally aged anodic films on magnetron sputtered niobium
2010
The influence of thermal aging, at intermediate temperature (1h at 250°C) and in different environments, on the electronic and solid-state properties of stabilized 160 nm thick amorphous anodic niobia, grown on magnetron sputtered niobium metal, has been studied. A detailed physicochemical characterisation of the a-Nb2O5/0.5M H2SO4 electrolyte junction has been carried out by means of photocurrent and electrochemical impedance spectroscopy as well by differential admittance measurements. A change in the optical band gap (3.45 eV) of niobia film has been observed after aging (3.30 eV) at 250°C in air for 1 hour. A cathodic shift (0.15-0.2 Volt) in the flat band potential of the junction has …
Amorphous semiconductor-electrolyte junctions. Photoelectrochemical behaviour of thin Nb2O5anodic films
1987
An approach to the study of the photocharacteristics of amorphous semiconductor/electrolyte junctions is proposed which takes into account the main differences in the electronic structure and the transport properties of the amorphous semiconductors (a-SC) with respect to the crystalline counterparts. The influence of the wavelength of the incident light on the photocurrent vs electrode potential curves is explained on the basis of the geminate recombination theory in a-SC. The implications of the model are shortly discussed.
Photoelectrochemical characterization of photocatalysts
2021
Abstract This chapter aims to provide an overview of the photoelectrochemical characterization of semiconducting photocatalysts and, in particular, present Photocurrent Spectroscopy (PCS) as a useful tool in determining the band structure of semiconducting/insulating materials. Some fundamentals on PCS will be provided looking at the experimental setup and underlying its advantages and disadvantages. Then, the photoelectrochemical behavior of a semiconductor/electrolyte junction under irradiation will be presented, also taking into account its crystalline or amorphous nature, highlighting how it is possible to get information on the energetics of the junction. This will be exploited to show…