Search results for "semiconductor"
showing 10 items of 974 documents
Charge Sharing and Cross Talk Effects in High-Z and Wide-Bandgap Compound Semiconductor Pixel Detectors
2023
Intense research activities have been made in the development of high-Z and wide-bandgap compound semiconductor pixel detectors for the next generation X-ray and gamma ray spectroscopic imagers. Cadmium telluride (CdTe) and cadmium-zinc-telluride (CdZnTe or CZT) pixel detectors have shown impressive performance in X-ray and gamma ray detection from energies of few keV up to 1 MeV. Charge sharing and cross-talk phenomena represent the typical drawbacks in sub-millimeter pixel detectors, with severe distortions in both energy and spatial resolution. In this chapter, we review the effects of these phenomena on the response of CZT/CdTe pixel detectors, with particular emphasis on the current st…
High-Z Materials for X-ray Detection: Material Properties and Characterization Techniques
2023
This book will provide readers with a good overview of some of most recent advances in the field of High-Z materials. There will be a good mixture of general chapters in both technology and applications in opto-electronics, X-ray detection and emerging optoelectronics applications. The book will have an in-depth review of the research topics from world-leading specialists in the field.
Electronic structure of indium selenide probed by magnetoabsorption spectroscopy under high pressure
2010
We report on an investigation of the peculiar electronic structure of the layered semiconductor InSe by magneto-optical experiments under high pressure up to 5 GPa. Magneto-absorption spectroscopy is performed under pulsed magnetic field up to 53 T using a specific setup. Excitonic magnetofingerprints and high-field oscillatory magnetoabsorption yield significant details on the band structure. In addition, the application of an external pressure unveils phenomena that confirm the specific $\mathbf{k}\ensuremath{\cdot}\mathbf{p}$ model proposed for this compound on the basis of earlier measurements.
High-Pressure Raman Study of Zincblende, Cinnabar, and Cmcm Phases Of ZnTe
2002
Raman measurements of ZnTe have been performed at pressures up to 15 GPa. Frequencies, line widths, and intensities of first- and second-order Raman features of the zincblende phase (0-9.5 GPa) were studied in detail. In this note, we focus on the Raman spectra of the high-pressure cinnabar and Cmcm phases. In the transition regime from cinnabar to Cmcm (12.2 to 13.7 GPa) the Raman data indicate the possible existence of a new intermediate high-pressure phase.
Universal soliton pattern formations in passively mode-locked fiber lasers
2011
International audience; We investigate multiple-soliton pattern formations in a figure-of-eight passively mode-locked fiber laser. Operation in the anomalous dispersion regime with a double-clad fiber amplifier allows generation of up to several hundreds of solitons per round trip. We report the observation of remarkable soliton distributions: soliton gas, soliton liquid, soliton polycrystal, and soliton crystal, thus indicating the universality of such complexes.
Les matériaux pour capteurs chimiques
2002
National audience; A chemical sensor is composed of one part supplying chemical reco gnition coupled to one transducingsystem. At the recognition origin, interaction with the target chemical species is oftwo types, either electronicexchange, or ionic exchange. Two large classes of materials that can supply recognition proceed: metals andsemiconductors giving rise to electronic exchange and ionic conducting materials giving rise to ionic exchan-ge. This paper is structured in tw o large parts, emphasizing on materi als inducing specific interactions:semiconductor materials (metallic oxides and molecular semiconductors) and ionic conductor materials.In each part will be presented nature of ma…
Time-dependent screening explains the ultrafast excitonic signal rise in 2D semiconductors
2020
We calculate the time evolution of the transient reflection signal in an MoS$_2$ monolayer on a SiO$_2$/Si substrate using first-principles out-of-equilibrium real-time methods. Our simulations provide a simple and intuitive physical picture for the delayed, yet ultrafast, evolution of the signal whose rise time depends on the excess energy of the pump laser: at laser energies above the A- and B-exciton, the pump pulse excites electrons and holes far away from the K valleys in the first Brillouin zone. Electron-phonon and hole-phonon scattering lead to a gradual relaxation of the carriers towards small $\textit{Active Excitonic Regions}$ around K, enhancing the dielectric screening. The acc…
Semiconductor-photocatalyzed sulfoxidation of alkanes.
2008
Preparation and characterisation of optical and optoelectronic devices based in two-dimensional semiconductors
2020
In the Materials Science field, two-dimensional materials have gained the scientific community attention in recent years. The change and the appearance of novel properties when their thickness is reduced to nanometric scale has special interest for its fundamental properties study for, from this base, the design and its implementation in devices. The wide variety of materials with the possibility of being exfoliated at the two-dimensional level opens the field to different applications, from optoelectronic devices, detection and sensing, energy storage, catalysis, medical applications and quantum information technologies, among others. This thesis gathers results in both directions: a funda…
Quantum wells within quantum dots, a CdS/HgS nanoheterostructure with global and local confinement
1998
Semiconductor nanocrystals prepared by methods of wet chemistry are similar to MBE grown quantum dots where the mobility of the charge carriers is reduced to zero dimensionality. In this paper we summarize the physics of a unique system in which the charge carriers are locally confined within a heterogeneous quantum dot. With high resolution electron microscopy we will show that epitaxial growth ot atomic layer precision is possible by methods of solution chemistry leading to CdS quantum dots with embedded HgS quantum wells (QDQWs). The photophysics of this system is investigated by time-correlated single photon counting, transient differential absorption and fluorescence line narrowing spe…