Search results for "semimetal"
showing 10 items of 36 documents
Simplified feedback control system for scanning tunneling microscopy
2021
A Scanning Tunneling Microscope (STM) is one of the most important scanning probe tools available to study and manipulate matter at the nanoscale. In a STM, a tip is scanned on top of a surface with a separation of a few \AA. Often, the tunneling current between tip and sample is maintained constant by modifying the distance between the tip apex and the surface through a feedback mechanism acting on a piezoelectric transducer. This produces very detailed images of the electronic properties of the surface. The feedback mechanism is nearly always made using a digital processing circuit separate from the user computer. Here we discuss another approach, using a computer and data acquisition thr…
Giant, unconventional anomalous Hall effect in the metallic frustrated magnet candidate, KV 3 Sb 5
2020
The anomalous Hall effect soars when Dirac quasiparticles meet frustrated magnetism.
Mixed topological semimetals driven by orbital complexity in two-dimensional ferromagnets
2018
The concepts of Weyl fermions and topological semimetals emerging in three-dimensional momentum space are extensively explored owing to the vast variety of exotic properties that they give rise to. On the other hand, very little is known about semimetallic states emerging in two-dimensional magnetic materials, which present the foundation for both present and future information technology. Here, we demonstrate that including the magnetization direction into the topological analysis allows for a natural classification of topological semimetallic states that manifest in two-dimensional ferromagnets as a result of the interplay between spin-orbit and exchange interactions. We explore the emerg…
Nonlinear chiral transport in Dirac semimetals
2018
We study the current of chiral charge density in a Dirac semimetal with two Dirac points in momentum space, subjected to an externally applied time dependent electric field and in the presence of a magnetic field. Based on the kinetic equation approach, we find contributions to the chiral charge current, that are proportional to the second power of the electric field and to the first and second powers of the magnetic field, describing the interplay of the chiral anomaly and the drift motion of electrons moving under the action of electric and magnetic fields.
Conduction band polarization in some CMR materials
2000
First principles electronic structure calculations reveal certain important common features in the conduction band polarization of many of the newly examined colossal magnetoresistance (CMR) materials. Most CMR compounds seem to possess a localized, magnetic band slightly below the Fermi energy. This localized band transfers polarization to a relatively broad conduction band. The nature of the two bands in different systems can be quite distinct. In the perovskite-derived manganese oxides, the magnetic band is derived from $Mn t_{2g}$ states while the conduction band is derived from Mn e states. In the chalcospinel $Fe_{^0.^5}$ $Cu_{^0.^5}$ $Cr_{2}$$ S_{4}$ , the $Crt_{2g}$ states which are…
Seebeck coefficients of half-metallic ferromagnets
2009
In this report the Co2 based Heusler compounds are discussed as potential materials for spin voltage generation. The compounds were synthesized by arcmelting and consequent annealing. Band structure calculations were performed and revealed the compounds to be half-metallic ferromagnets. Magnetometry was performed on the samples and the Curie temperatures and the magnetic moments were determined. The Seebeck coefficients were measured from low to ambient temperatures for all compounds. For selected compounds high temperature measurements up to 900 K were performed.
Effects of Nid-levels on the electronic band structure of NixCd1-xO semiconducting alloys
2017
NixCd1-xO has a ∼3 eV band edge offset and bandgap varying from 2.2 to 3.6 eV, which is potentially important for transparent electronic and photovoltaic applications. We present a systematic study of the electronic band structure of NixCd1-xO alloys across the composition range. Ion irradiation of alloy samples leads to a saturation of the electron concentration associated with pinning of the Fermi level (EF) at the Fermi stabilization energy, the common energy reference located at 4.9 eV below the vacuum level. The composition dependence of the pinned EF allows determination of the conduction band minimum (CBM) energy relative to the vacuum level. The unusually strong deviation of the CBM…
Electron–phonon effects on the direct band gap in semiconductors: LCAO calculations
2002
Abstract Using a perturbative treatment of the electron–phonon interaction, we have studied the effect of phonons on the direct band gap of conventional semiconductors. Our calculations are performed in the framework of the tight-binding linear combination of atomic orbitals (LCAO) approach. Within this scheme we have calculated the temperature and isotopic mass dependence of the lowest direct band gap of several semiconductors with diamond and zincblende structure. Our results reproduce the overall trend of available experimental data for the band gap as a function of temperature, as well as give correctly the mass dependence of the band gap on isotopic. A calculation of conduction band in…
Band Alignments in InxGa1–xP/GaAs Heterostructures Investigated by Pressure Experiments
2000
6 páginas, 3 figuras.
Semiconducting half-Heusler and LiGaGe structure type compounds
2009
Compounds with LiAlSi (half-Heusler) and LiGaGe structure types have been investigated by means of band structure calculations. The LiAlSi structure type is known as the half-Heusler structure type, whereas LiGaGe is a closely related hexagonal variant. A remarkable feature of some XYZ half-Heusler compounds with 8 and 18 valence electrons is, that despite being composed of only metallic elements, they are semiconductors. More than 100 semiconducting compounds within these structure types are known. LiGaGe compounds have an additional degree of freedom, namely the degree of puckering of the layers. These compounds can become semiconducting at a certain degree of puckering. Half-metallic beh…