Search results for "silicon"
showing 10 items of 1391 documents
Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
2018
The atomic layer deposition (ALD) of AlN from AlCl3 was investigated using a thermal process with NH3 and a plasma-enhanced (PE)ALD process with Ar/NH3 plasma. The growth was limited in the thermal process by the low reactivity of NH3, and impractically long pulses were required to reach saturation. Despite the plasma activation, the growth per cycle in the PEALD process was lower than that in the thermal process (0.4A ° vs 0.7A ° ). However, the plasma process resulted in a lower concentration of impurities in the films compared to the thermal process. Both the thermal and plasma processes yielded crystalline films; however, the degree of crystallinity was higher in the plasma process. The…
Refractive index sensing by a silicon metasurface
2022
The availability of smart materials represents a key enabling milestone for the realization of smart sensors. In this research field, optical sensing has gained a lot of attention in various applications ranging from basic physics to chemistry and biology. Here, we exploit the non-invasive nature of light to achieve an innovative sensor based on all-optical dielectric nano-resonators arranged in a periodic fashion. The proposed sensor can measure refractive index changes up to 10(-6).
Signal to noise ratio measurements of silicon photomultipliers
2014
We report on our signal to noise ratio (SNR) measurements carried out, in the continuous wave regime, on a novel class of silicon photomultipliers (SiPMs) fabricated in planar technology on silicon p-type substrate. SiPMs are large area detectors consisting of a parallel array of Geiger Mode APDs with individual integrated quenching resistors. Each photodiode is an independent photon counting microcell and is connected to a common analog output to produce a summation signal proportional to the number of detected photons [1], [2]. SNR of SiPMs is expressed by the ratio of the SiPM average signal current and the RMS deviation of the overall current (i.e., the overall shot noise current). The …
A silicon photomultiplier-based analog front-end for DC component rejection and pulse wave recording in photoplethysmographic applications
2022
The growing attention towards healthcare and the constant technological innovations in the field of semiconductor components have allowed a widespread availability of smaller devices, suitable to be worn and able to continuously acquire physiological signals. Wearable devices are, however, more prone to yield signals corrupted by artifacts caused by movement. This issue is particularly relevant in photoplethysmographic (PPG) applications where also, to exploit the whole dynamic range of the acquisition device, the DC component of the signal should be removed and the AC component amplified. In this context, we have designed and realized an analog front-end (AFE) suitable to be integrated wit…
Removal of silicon from CFB-derived fly ash leachate in the context of phosphorus recovery
2018
High concentrations of dissolved silica in the acid leachate impose two major challenges on precipitation based recovery of phosphorus (P). Firstly, co-precipitation of colloidal silica in the acidic regimes decreases the purity and value of precipitated P-products. In addition, silica scaling on internal surfaces of equipment is also a problematic issue in industrial operations. Therefore, removal of dissolved silica prior to P-recovery process minimizes the risks of Si-contamination in P-products and Si-scaling. In the present study, silica removal was achieved by accelerated silica polymerization with higher acidity and ionic strength of mineral acid, which also assisted the leaching of …
Microscratch testing method for systematic evaluation of the adhesion of atomic layer deposited thin films on silicon
2016
The scratch test method is widely used for adhesion evaluation of thin films and coatings. Usual critical load criteria designed for scratch testing of coatings were not applicable to thin atomic layer deposition (ALD) films on silicon wafers. Thus, the bases for critical load evaluation were established and the critical loads suitable for ALD coating adhesion evaluation on silicon wafers were determined in this paper as LCSi1, LCSi2, LCALD1, and LCALD2, representing the failure points of the silicon substrate and the coating delamination points of the ALD coating. The adhesion performance of the ALD Al2O3, TiO2, TiN, and TaCN+Ru coatings with a thickness range between 20 and 600 nm and dep…
Structural and electronic elucidation of a N-heterocyclic silylene vanadocene adduct
2017
The solid and solution state structure of the vanadium(II) N‐ heterocyclic silylene (NHSi) complex, [(SiIPr)V(Cp)2] (1) is reported ( SiIPr: 1,3‐bis(2,6‐diisopropylphenyl)‐1,3‐diaza‐2‐silacyclopent‐4‐ en‐2‐ylidene). The electronic structure of 1 is probed using combination of magnetic measurements, EPR spectroscopy and computational studies. The V–Si bond strength and complex forming mechanism between vanadocene and NHSi ligand is elucidated using computational methods. peerReviewed
Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence
2017
Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages applied during heavy-ion exposure. In addition, TCAD simulations are used to give insight on the physical mechanisms involved. peerReviewed
Measurements of Low-Energy Protons using a Silicon Detector for Application to SEE Testing
2021
A silicon detector with a fast electronics chain is used for the dosimetry of protons in the range 0.5-5 MeV at the Centro Nacional de Aceleradores (CNA) 3 MV Tandem laboratory in Seville, Spain. In this configuration, measurements can be performed in pulsed mode, using a digitizer to record event-by-event proton energy depositions. The distributions of deposited energy were obtained thanks to a calibration with an alpha source. Measurements of flux and deposited energy are used to enable single event effect (SEE) testing on selected static random access memories (SRAMs).
Photocycle of point defects in highly- and weakly-germanium doped silica revealed by transient absorption measurements with femtosecond tunable pump.
2022
AbstractWe report pump-probe transient absorption measurements addressing the photocycle of the Germanium lone pair center (GLPC) point defect with an unprecedented time resolution. The GLPC is a model point defect with a simple and well-understood electronic structure, highly relevant for several applications. Therefore, a full explanation of its photocycle is fundamental to understand the relaxation mechanisms of such molecular-like systems in solid state. The experiment, carried out exciting the sample resonantly with the ultraviolet (UV) GLPC absorption band peaked at 5.1 eV, gave us the possibility to follow the defect excitation-relaxation dynamics from the femto-picosecond to the nan…