Search results for "silicon"
showing 10 items of 1391 documents
Luminescence of gamma-radiation-induced defects in alpha-quartz
2004
Optical transitions associated with gamma-radiation-induced defects in crystalline a-quartz were investigated by photoluminescence excited by both pulsed synchrotron radiation and steady-state light. After a 10 MGy gamma-dose we observed two emissions at 4.9 eV (ultraviolet band) and 2.7 eV (blue band) excitable in the range of the induced absorption band at 7.6 eV. These two luminescence bands show a different temperature dependence: the ultraviolet band becomes bright below 80 K; the blue band increases below 180 K, but drops down below 80 K. Both emissions decay in a timescale of a few ns under pulsed excitation, however the blue band could also be observed in slow recombination processe…
Siliceous spicules in marine demosponges (example Suberites domuncula)
2005
All metazoan animals comprise a body plan of different complexity. Since-especially based on molecular and cell biological data-it is well established that all metazoan phyla, including the Porifera (sponges), evolved from a common ancestor the search for common, basic principles of pattern formation (body plan) in all phyla began. Common to all metazoan body plans is the formation of at least one axis that runs from the apical to the basal region; examples for this type of organization are the Porifera and the Cnidaria (diploblastic animals). It seems conceivable that the basis for the formation of the Bauplan in sponges is the construction of their skeleton by spicules. In Demospongiae (w…
Data Transmission and Thermo-Optic Tuning Performance of Dielectric-Loaded Plasmonic Structures Hetero-Integrated on a Silicon Chip
2012
We demonstrate experimental evidence of the data capture and the low-energy thermo-optic tuning credentials of dielectric-loaded plasmonic structures integrated on a silicon chip. We show 7-nm thermo-optical tuning of a plasmonic racetrack-resonator with less than 3.3 mW required electrical power and verify error-free 10-Gb/s transmission through a 60-mu m-long dielectric-loaded plasmonic waveguide. We demonstrate experimental evidence of the data capture and the low-energy thermo-optic tuning credentials of dielectric-loaded plasmonic structures integrated on a silicon chip. We show 7-nm thermo-optical tuning of a plasmonic racetrack-resonator with less than 3.3 mW required electrical powe…
A Geant4 simulation package for the sage spectrometer
2012
International audience; A comprehensive Geant4 simulation was built for the SAGE spectrometer. The simulation package includes the silicon and germanium detectors, the mechanical structure and the electromagnetic fields present in SAGE. This simulation can be used for making predictions through simulating experiments and for comparing simulated and experimental data to better understand the underlying physics.
Sub-wavelength imaging of light confinement and propagation in SOI based photonic crystal devices
2006
A light source is coupled into photonic crystal devices and a near field optical probe is used to observe the electromagnetic field propagation and distribution at a sub-wavelength scale. Bloch modes are clearly observed.
Modelling of phase boundaries for large industrial FZ silicon crystal growth with the needle-eye technique
2003
In order to facilitate the numerical calculations of the phase boundaries in large industrial floating zone silicon crystal growth with the needle-eye technique, the chain of improved mathematical models is developed. The phase boundaries are solved in a partly transient way and the modelling improvements cover the open melting front, the inner triple point and the free melt surface. The view factors model is applied for the radiative heat transfer. The electromagnetic field is calculated with account of a multiple-slit inductor.
Combined Effects of 50 Hz Electromagnetic Field and SiO2 Nanoparticles on Oxidative Stress in Plant’s Gametic Cells / Zemfrekvences (50 Hz) Elekromag…
2015
Abstract The paper presents the results of combined effects of an extremely low frequency electromagnetic field (50 Hz) (ELF EMF) and SiO2 nanoparticles on fluorescence of plant gametic cells (immature microspores). The data were recorded by a BD FACSJazz® cell sorter after cell irradiation by blue laser (488 nm). A significant difference of fluorescence was observed between gametic cells after 1 hour incubation in suspension of SiO2 nanoparticles and the control gametic cells. It was observed that fluorescence intensity of gametic cell was higher with ELF EMF treatment in comparison to control cells, but it was statistically significant only for cells treated with electromagnetic radiation…
Beam test results of IHEP-NDL Low Gain Avalanche Detectors(LGAD)
2020
A High-Granularity Timing Detector (HGTD) is proposed based on the Low-Gain Avalanche Detector (LGAD) for the ATLAS experiment to satisfy the time resolution requirement for the up-coming High Luminosity at LHC (HL-LHC). We report on beam test results for two proto-types LGADs (BV60 and BV170) developed for the HGTD. Such modules were manufactured by the Institute of High Energy Physics (IHEP) of Chinese Academy of Sciences (CAS) collaborated with Novel Device Laboratory (NDL) of the Beijing Normal University. The beam tests were performed with 5 GeV electron beam at DESY. The timing performance of the LGADs was compared to a trigger counter consisting of a quartz bar coupled to a SiPM read…
Gigahertz Single-Electron Pumping Mediated by Parasitic States
2018
In quantum metrology, semiconductor single-electron pumps are used to generate accurate electric currents with the ultimate goal of implementing the emerging quantum standard of the ampere. Pumps based on electrostatically defined tunable quantum dots (QDs) have thus far shown the most promising performance in combining fast and accurate charge transfer. However, at frequencies exceeding approximately 1 GHz, the accuracy typically decreases. Recently, hybrid pumps based on QDs coupled to trap states have led to increased transfer rates due to tighter electrostatic confinement. Here, we operate a hybrid electron pump in silicon obtained by coupling a QD to multiple parasitic states, and achi…
Location of holes in silicon-rich oxide as memory states
2002
The induced changes of the flatband voltage by the location of holes in a silicon-rich oxide (SRO) film sandwiched between two thin SiO 2 layers [used as gate dielectric in a metal-oxide-semiconductor (MOS) capacitor] can be used as the two states of a memory cell. The principle of operation is based on holes permanently trapped in the SRO layer and reversibly moved up and down, close to the metal and the semiconductor, in order to obtain the two logic states of the memory. The concept has been verified by suitable experiments on MOS structures. The device exhibits an excellent endurance behavior and, due to the low mobility of the holes at low field in the SRO layer, a much longer refresh …