6533b827fe1ef96bd1286531
RESEARCH PRODUCT
Location of holes in silicon-rich oxide as memory states
Salvatore LombardoIsodiana CrupiBarbara FazioCosimo GerardiEmanuele RiminiM. Melanottesubject
Electron mobilityDynamic random-access memoryMaterials scienceSROPhysics and Astronomy (miscellaneous)Siliconbusiness.industryGate dielectricchemistry.chemical_elementsemiconductor memorySettore ING-INF/01 - ElettronicaSettore FIS/03 - Fisica Della Materialaw.inventionLocalized trapsCapacitorElectrical transportSemiconductorchemistryMemory celllawnanocristalliComputer data storageOptoelectronicsMemory devicebusinessdescription
The induced changes of the flatband voltage by the location of holes in a silicon-rich oxide (SRO) film sandwiched between two thin SiO 2 layers [used as gate dielectric in a metal-oxide-semiconductor (MOS) capacitor] can be used as the two states of a memory cell. The principle of operation is based on holes permanently trapped in the SRO layer and reversibly moved up and down, close to the metal and the semiconductor, in order to obtain the two logic states of the memory. The concept has been verified by suitable experiments on MOS structures. The device exhibits an excellent endurance behavior and, due to the low mobility of the holes at low field in the SRO layer, a much longer refresh time compared to conventional dynamic random access memory cells. © 2002 American Institute of Physics.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2002-11-04 | Applied Physics Letters |