showing 10 related works from this author
Nanocrystal MOS with silicon-rich oxide
2001
By electrical measurements we investigate the charge trapping and the charge transport in MOS capacitors in which the gate oxide has been replaced with a silicon rich oxide (SRO) film sandwiched between two thin SiO2 layers.
Memory effects in MOS capacitors with silicon rich oxide insulators
2000
ABSTRACTTo form crystalline Si dots embedded in SiO2, we have deposited thin films of silicon rich oxide (SRO) by plasma-enhanced chemical vapor deposition of SiH4 and O2. Then the materials wereannealed in N2 ambient at temperatures between 950 and 1100 °C. Under such processing, the supersaturation of Si in the amorphous SRO film produces the formation of crystalline Si dots embedded in SiO2. The narrow dot size distributions, analyzed by transmission electron microscopy, are characterized by average grain radii and standard deviations down to about 1 nm. The memory function of such structures has been investigated in metal-oxidesemiconductor (MOS) capacitors with a SRO film sandwiched be…
Memory effects in MOS capacitors with silicon quantum dots
2001
To form crystalline Si dots embedded in SiO2, we have deposited thin films of silicon-rich oxide (SRO) by plasma-enhanced chemical vapor deposition of SiH4 and O2. Then the materials have been annealed in N2 ambient at temperatures between 950°C and 1100°C. Under such processing, the supersaturation of Si in the amorphous SRO film produces the formation of crystalline Si dots embedded in SiO2. The narrow dot size distributions, analyzed by transmission electron microscopy, are characterized by average grain radii and standard deviations down to about 1 nm. The memory functions of such structures has been investigated in MOS capacitors with a SRO film sandwiched between two thin SiO2 layers …
Electrical and structural characterization of metal-oxide-semiconductor capacitors with silicon rich oxide
2001
Metal-oxide-semiconductor capacitors in which the gate oxide has been replaced with a silicon rich oxide (SRO) film sandwiched between two thin SiO2 layers are presented and investigated by transmission electron microscopy and electrical measurements. The grain size distribution and the amount of crystallized silicon remaining in SRO after annealing have been studied by transmission electron microscopy, whereas the charge trapping and the charge transport through the dots in the SRO layer have been extensively investigated by electrical measurements. Furthermore, a model, which explains the electrical behavior of such SRO capacitors, is presented and discussed. © 2001 American Institute of …
Biomineral Amorphous Lasers through Light-Scattering Surfaces Assembled by Electrospun Fiber Templates
2018
New materials aim at exploiting the great control of living organisms over molecular architectures and minerals. Optical biomimetics has been widely developed by microengineering, leading to photonic components with order resembling those found in plants and animals. These systems, however, are realized by complicated and adverse processes. Here we show how biomineralization might enable the one-step generation of components for amorphous photonics, in which light is made to travel through disordered scattering systems, and particularly of active devices such as random lasers, by using electrospun fiber templates. The amount of bio-enzymatically produced silica is related to light-scatterin…
Location of holes in silicon-rich oxide as memory states
2002
The induced changes of the flatband voltage by the location of holes in a silicon-rich oxide (SRO) film sandwiched between two thin SiO 2 layers [used as gate dielectric in a metal-oxide-semiconductor (MOS) capacitor] can be used as the two states of a memory cell. The principle of operation is based on holes permanently trapped in the SRO layer and reversibly moved up and down, close to the metal and the semiconductor, in order to obtain the two logic states of the memory. The concept has been verified by suitable experiments on MOS structures. The device exhibits an excellent endurance behavior and, due to the low mobility of the holes at low field in the SRO layer, a much longer refresh …
Archaeometric Characterisation of Decorated Pottery from the Archaeological Site of Villa dei Quintili (Rome, Italy): Preliminary Study
2019
This work focused on the study of decorated pottery dated back to the 16th century from the Roman archaeological site of Villa dei Quintili, a monumental complex located in the south-eastern part of Rome (Italy). A minero-petrographic and geochemical study was undertaken to analyse five archaeological samples in order to define textural features and raw materials used for their production, along with the chemical and physical composition of the superficial decorative glazed coatings. For this purpose, different analytical methods were used, such as polarising optical microscope (POM), X-ray diffraction (XRD), micro-Raman spectroscopy, X-Ray fluorescence (XRF), and electron microprobe analys…
Morphology of 1-alkyl-3-methylimidazolium hexafluorophosphate room temperature ionic liquids
2008
The structural organization in selected room temperature ionic liquids, namely (a) butyl-, (b) hexyl- and (c) octyl-3-methylimidazolium hexafluorophosphate, is investigated by means of X-ray diffraction. We find novel experimental evidences of the existence of a high degree of intermediate range order that is associated to nanoscale segregation of the alkyl chains into the charged matrix. The size of these structural heterogeneities depends linearly from the alkyl chain length. A similar behaviour had been observed in other systems, such as normal alcohols. The slope of such dependence provides hints on the nature of the structural organization of these segregated domains.
Ultrathin silicon nanowires for optical and electrical nitrogen dioxide detection
2021
The ever-stronger attention paid to enhancing safety in the workplace has led to novel sensor development and improvement. Despite the technological progress, nanostructured sensors are not being commercially transferred due to expensive and non-microelectronic compatible materials and processing approaches. In this paper, the realization of a cost-effective sensor based on ultrathin silicon nanowires (Si NWs) for the detection of nitrogen dioxide (NO2) is reported. A modification of the metal-assisted chemical etching method allows light-emitting silicon nanowires to be obtained through a fast, low-cost, and industrially compatible approach. NO2 is a well-known dangerous gas that, even wit…
Fluorescent Biosensors Based on Silicon Nanowires
2021
Nanostructures are arising as novel biosensing platforms promising to surpass current performance in terms of sensitivity, selectivity, and affordability of standard approaches. However, for several nanosensors, the material and synthesis used make the industrial transfer of such technologies complex. Silicon nanowires (NWs) are compatible with Si-based flat architecture fabrication and arise as a hopeful solution to couple their interesting physical properties and surface-to-volume ratio to an easy commercial transfer. Among all the transduction methods, fluorescent probes and sensors emerge as some of the most used approaches thanks to their easy data interpretation, measure affordability…