6533b7d4fe1ef96bd12627b9
RESEARCH PRODUCT
Nanocrystal MOS with silicon-rich oxide
Isodiana CrupiEmanuele RiminiM. MelanotteM. VulpioCosimo GerardiSalvatore LombardoBarbara Faziosubject
Materials scienceSiliconSROPhysics and Astronomy (miscellaneous)MOS memoryOxideQuantum dotchemistry.chemical_elementNanotechnologyCondensed Matter PhysicCondensed Matter PhysicsSettore ING-INF/01 - ElettronicaAtomic and Molecular Physics and OpticsElectronic Optical and Magnetic Materialschemistry.chemical_compoundchemistryNanocrystalGeneral Materials ScienceMaterials Science (all)description
By electrical measurements we investigate the charge trapping and the charge transport in MOS capacitors in which the gate oxide has been replaced with a silicon rich oxide (SRO) film sandwiched between two thin SiO2 layers.
year | journal | country | edition | language |
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2001-11-01 |